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公开(公告)号：US20080054191A1
公开(公告)日：2008-03-06
申请号：US11934512
申请日：2007-11-02
Applicant: Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
Inventor： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
CPC classification number: G03F7/7065 , G03F7/70383 , H01L22/22 , H01L2924/0002 , H01L2924/00
Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.
Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。
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公开(公告)号：US20060148109A1
公开(公告)日：2006-07-06
申请号：US11029992
申请日：2005-01-05
Applicant: Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
Inventor： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
CPC classification number: G03F7/7065 , G03F7/70383 , H01L22/22 , H01L2924/0002 , H01L2924/00
Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.
Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。
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公开(公告)号：US20060139603A1
公开(公告)日：2006-06-29
申请号：US11317974
申请日：2005-12-23
Applicant: Burn Lin
Inventor： Burn Lin
IPC: G03B27/54
CPC classification number: G03F7/70275 , G03F7/70208 , G03F7/70283
Abstract: An exposure system includes a mask stage module adapted for holding a first mask and a second mask, wherein the first mask is configured for illumination by a first beam to form a transformed first beam having a first pattern from the first mask and the second mask is configured for illumination by a second beam to form a transformed second beam having a second pattern from the second mask. The exposure system also includes a beam combiner configured to combine the transformed first and second beams to form a resultant beam, wherein the resultant beam is projected into a substrate coated with a photoresist layer.
Abstract translation: 曝光系统包括适于保持第一掩模和第二掩模的掩模台模块，其中第一掩模被配置为由第一光束照明以形成具有来自第一掩模的第一图案的变换的第一光束，而第二掩模是 被配置为由第二光束照明以形成具有来自第二掩模的第二图案的变换的第二光束。 曝光系统还包括光束组合器，其被配置为组合变换的第一和第二光束以形成合成光束，其中所得到的光束投射到涂覆有光致抗蚀剂层的基板中。
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公开(公告)号：US20060083997A1
公开(公告)日：2006-04-20
申请号：US11248070
申请日：2005-10-12
Applicant: Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
Inventor： Burn Lin , Jeng-Horng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih , Hua-Tai Lin , Hung Hsieh
CPC classification number: G03F1/38
Abstract: Disclosed is a photomask comprising a transparent substrate, an absorption layer proximate to the transparent substrate, and a pellicle mounted proximate to the transparent substrate. The absorption layer has at least one opening formed therein for receiving a wavelength-reducing material (WRM). The wavelength-reducing material and the absorption layer form a generally planar surface.
Abstract translation: 公开了一种光掩模，其包括透明基板，靠近透明基板的吸收层和靠近透明基板安装的防护薄膜组件。 吸收层具有形成在其中的至少一个开口用于接收波长减小材料（WRM）。 波长减小材料和吸收层形成大致平坦的表面。
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公开(公告)号：US20050164098A1
公开(公告)日：2005-07-28
申请号：US10765531
申请日：2004-01-27
Applicant: Burn Lin , Ping Yang , Hong Hsieh , Yao Ku , Chin-Hsiang Lin , Chiu Yoo
Inventor： Burn Lin , Ping Yang , Hong Hsieh , Yao Ku , Chin-Hsiang Lin , Chiu Yoo
CPC classification number: G03F7/70425 , G03F1/72 , G03F1/76 , G03F1/84 , G03F7/70383 , G03F9/7003 , G03F9/7011 , G03F9/7046 , G03F9/7049
Abstract: A method and system is disclosed for processing one or more oblique features on a mask or reticle substrate. After aligning the mask or reticle substrate with a predetermined reference system, an offset angle of a feature to be processed on the mask or reticle substrate with regard to either the horizontal or vertical reference direction of the predetermined reference system is determined. The mask or reticle substrate is rotated in a predetermined direction by the offset angle; and the feature on the mask or reticle substrate is processed using the predetermined reference system wherein the feature is processed in either the horizontal or vertical reference direction thereof.
Abstract translation: 公开了一种用于处理掩模或掩模版基板上的一个或多个倾斜特征的方法和系统。 在掩模或掩模版基板与预定的参考系统对准之后，确定相对于预定参考系的水平或垂直参考方向在掩模或掩模版基板上要处理的特征的偏移角。 掩模或掩模版基板沿预定方向旋转偏移角; 并且使用预定的参考系统处理掩模或掩模版基板上的特征，其中特征在水平或垂直参考方向上被处理。
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Patent Agency Ranking
公开(公告)号：US20050012914A1
公开(公告)日：2005-01-20
申请号：US10918863
申请日：2004-08-16
Applicant: Burn Lin
Inventor： Burn Lin
CPC classification number: G03F7/70283 , G03F7/70358 , G03F7/70466 , G03F9/7076
Abstract: A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned. By repeating this sequence across the wafer twice, the patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby create the patterning in the manufacture of the integrated circuit device.
Abstract translation: 描述了一种新的光刻曝光设备。 该装置可以包括例如光刻步进器或扫描器。 晶片台包括支撑半导体晶片的装置。 掩模台包括保持第一掩模和第二掩模并保持第一掩模和第二掩模之间的固定相对位置的装置。 掩模台还可以包括对准每个掩模的独立装置。 光源包括选择性地通过第一掩模和第二掩模之一照射光化光的装置。 成像透镜能够将光化学光聚焦到半导体晶片上。 提供了使用掩模阶段的步骤和扫描方法。 第一掩模和第二掩模被加载到光刻曝光设备的掩模级中。 第一个掩模和第二个掩模对齐。 第一个掩模被扫描。 然后将晶片加工成台阶。 第二个面罩被扫描。 通过跨晶片重复该序列两次，因此第一掩模和第二掩模的图案在每个场中叠加。 显影光致抗蚀剂层，从而在集成电路器件的制造中形成图案化。
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公开(公告)号：US20070085034A1
公开(公告)日：2007-04-19
申请号：US11251330
申请日：2005-10-14
Applicant: Ching-Yu Chang , Chin-Hsiang Lin , Burn Lin , David Lu
Inventor： Ching-Yu Chang , Chin-Hsiang Lin , Burn Lin , David Lu
IPC: G03F7/20
CPC classification number: G03F7/2041 , G03F7/70341 , G03F7/70941
Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.
Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。
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8.发明申请公开(公告)号：US20070004182A1
公开(公告)日：2007-01-04
申请号：US11280162
申请日：2005-11-16
Applicant: Ching-Yu Chang , Burn Lin
Inventor： Ching-Yu Chang , Burn Lin
CPC classification number: G03F7/70925 , G03F7/70341 , G03F7/70916
Abstract: An immersion lithography system includes an immersion fluid holder for containing an immersion fluid. The system further includes a stage for positioning a resist-coated semiconductor wafer in the immersion fluid holder and a lens proximate to the immersion fluid holder and positionable for projecting an image through the immersion fluid and onto the resist-coated semiconductor wafer. The immersion fluid holder includes a coating configured to reduce contaminate adhesion from contaminates in the immersion fluid.
Abstract translation: 浸没式光刻系统包括用于容纳浸液的浸液流体保持器。 该系统还包括用于将浸渍液体保持器中的抗蚀剂涂覆的半导体晶片定位的台和靠近浸没流体保持器的透镜，并且可定位用于将图像投影通过浸没流体并且涂覆到抗蚀剂涂覆的半导体晶片上。 浸没流体保持器包括被配置为减少污染物从浸渍流体中的污染物粘附的涂层。
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公开(公告)号：US20050147921A1
公开(公告)日：2005-07-07
申请号：US11043304
申请日：2005-01-26
Applicant: Chin-Hsiang Lin , Burn Lin
Inventor： Chin-Hsiang Lin , Burn Lin
CPC classification number: G03F7/70466 , G03F7/001 , G03F7/201 , G03F7/203 , G03F7/70408
Abstract: Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.
Abstract translation: 提供了高分辨率光刻系统和方法。 在一个示例中，用于在衬底上产生图案的方法包括将图案分离成至少包含沿第一方向定向的线的第一子图案和包含沿第二方向定向的线的第二子图案。 使用第一驻波干涉图案，在基板上的第一感光材料层上产生沿第一方向取向的线。 创建的线的一部分被修剪以创建第一子图案。 在形成第一子图案之后，将第二层感光材料施加到基板上。 使用第二驻波干涉图形在第二层上产生朝向第二方向的线。 创建的线的一部分被修剪以创建第二子图案。
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10.发明申请公开(公告)号：US20050100798A1
公开(公告)日：2005-05-12
申请号：US10964842
申请日：2004-10-13
Applicant: Burn Lin , Jeng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
Inventor： Burn Lin , Jeng Chen , Chun-Kuang Chen , Tsai-Sheng Gau , Ru-Gun Liu , Jen-Chieh Shih
Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.
Abstract translation: 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。
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