公开(公告)号：US10830638B2

公开(公告)日：2020-11-10

申请号：US16015678

申请日：2018-06-22

Applicant: Ciena Corporation

Inventor： Francois Pelletier ,  Michel Poulin ,  Yves Painchaud ,  Michael Vitic ,  Christine Latrasse ,  Alexandre Delisle-Simard

IPC: G01J1/04 ,  G01J1/44 ,  H04B10/61 ,  H01L31/028 ,  H01L31/109

Abstract: A photodetector circuit is disclosed. The photodetector circuit includes an optical input configured to receive a source optical signal for detection by the photodetector circuit, an optical waveguide for coupling the optical input and at least one side of a plurality of sides of a photodiode, wherein the optical waveguide is configured to generate a first optical signal and a second optical signal from the source optical signal, and the photodiode coupled to the first optical waveguide, where the photodiode is illuminated on the at least one side by the first and second optical signals at different locations on the photodiode, where the photodiode generates a photocurrent based on the first and second optical signals reducing photocurrent saturation. Providing a delay between the first and second optical signals reduces an out-of-band frequency response of the photodiode circuit.

公开(公告)号：US12117678B2

公开(公告)日：2024-10-15

申请号：US18323309

申请日：2023-05-24

Applicant: Ciena Corporation

Inventor： Alexandre Delisle-Simard ,  Yves Painchaud

IPC: G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F1/0156 ,  G02F2202/06 ,  G02F2202/105

Abstract: An optical modulator includes a waveguide core; a first transition zone located between a first side of the waveguide core and a first electrical contact region; and a second transition zone located between a second side of the waveguide core and a second electrical contact region, wherein one or more of the first transition zone and second transition zone has a variable thickness. The variable thickness is confined to the one or more of the first transition zone and second transition zone. The variable thickness removes a portion of the highly doped first transition zone and the highly doped second transition zone thereby reducing contact resistance.

公开(公告)号：US11768391B2

公开(公告)日：2023-09-26

申请号：US17570332

申请日：2022-01-06

Applicant: Ciena Corporation

Inventor： Michel Poulin ,  Alexandre Delisle-Simard ,  Charles Baudot

IPC: G02F1/025 ,  G02F1/21 ,  G02F1/225 ,  G02B6/12

CPC classification number: G02F1/025 ,  G02B6/12004 ,  G02F1/212 ,  G02F1/2255 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12142

Abstract: A carrier depletion-based Silicon Photonic (SiP) modulator using capacitive coupling includes a high-k dielectric material in or on slabs, between a rib. A capacitance (Ck) of the high-k dielectric material is larger than a capacitance (Cpn) of the rib, thereby reducing the high frequency impedance and improving bandwidth of the modulator. A modulator includes a first electrode; a first slab connected to the first electrode at a first end; a rib connected to the first slab at a second end of the first slab; a second slab connected to the rib at a first end; a second electrode connected to the second slab at a second end of the second slab; and a high-k dielectric material disposed in or on a portion of each of the first slab and the second slab, thereby enabling capacitive coupling.

公开(公告)号：US11740533B2

公开(公告)日：2023-08-29

申请号：US17474105

申请日：2021-09-14

Applicant: Ciena Corporation

Inventor： Michel Poulin ,  Alexandre Delisle-Simard ,  Michael Vitic

IPC: G02F1/225 ,  G02F1/025

CPC classification number: G02F1/2255 ,  G02F1/025 ,  G02F2201/127

Abstract: A first transmission line comprises a first pair of electrodes receiving an electrical drive comprising first and second drive signals, which are loaded by a first series of p-n junctions applying optical phase modulation to respective optical waves propagating over a first section of the first and second optical waveguide arms of an MZI. A second transmission line comprises a second pair of electrodes configured to receive the electrical drive after an electrical signal delay. The second pair of electrodes are loaded by a second series of p-n junctions applying optical phase modulation to the respective optical waves propagating over a second section of the first and second optical waveguide arms after propagation over the first section. An electrode extension structure provides the electrical drive to the second pair of electrodes, and comprises an unloaded transmission line portion imposing the electrical signal delay based on an optical signal delay.

公开(公告)号：US11683092B2

公开(公告)日：2023-06-20

申请号：US17183538

申请日：2021-02-24

Applicant: Ciena Corporation

Inventor： Antoine Bois ,  Alexandre Delisle-Simard ,  Marie-Josée Picard ,  Michel Poulin

IPC: H04B10/07 ,  H04B10/079 ,  G02B6/12 ,  H01S5/0683 ,  H04B10/67

CPC classification number: H04B10/07955 ,  G02B6/12004 ,  G02B2006/1215 ,  G02B2006/12138 ,  G02B2006/12154 ,  H01S5/0683 ,  H04B10/07 ,  H04B10/07957 ,  H04B10/674 ,  H04B10/675

Abstract: A loss-based wavelength meter includes a first photodiode configured to measure power of monochromatic light; and a loss section having a monotonic wavelength dependency, wherein a wavelength of the monochromatic light is determined based on measurements of the first photodiode after the monochromatic light has gone through the loss section. This provides a compact implementation that may be used in integrated optics devices using silicon photonics as well as other embodiments.

公开(公告)号：US11422394B2

公开(公告)日：2022-08-23

申请号：US16609239

申请日：2019-01-25

Applicant: Ciena Corporation

Inventor： Alexandre Delisle-Simard ,  Yves Painchaud

IPC: G02F1/025 ,  G02F1/015

Abstract: A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of optical attenuation or contact access resistance or both. A modulator includes a core; a first transition zone that is a P-side region adjacent to the waveguide core, the first transition zone has a first longitudinal doping profile; and a second transition zone that is an N-side region adjacent to the core on an opposite side as the first transition region, the second transition zone has a second longitudinal doping profile; the first longitudinal doping profile has a variation of doping concentration along a longitudinal direction in the first transition region to mimic a first lateral doping profile, and the second longitudinal doping profile has a variation of doping concentration along a longitudinal direction in the second transition region to mimic a second lateral doping profile.

公开(公告)号：US11226504B2

公开(公告)日：2022-01-18

申请号：US16516381

申请日：2019-07-19

Applicant: Ciena Corporation

Inventor： Sean Sebastian O'Keefe ,  Alexandre Delisle-Simard ,  Yves Painchaud

IPC: G02F1/025 ,  G02F1/015

Abstract: The present disclosure provides a multi-pass free-carrier absorption variable optical attenuator device, including: a diode structure including a P-type doped region and an N-type doped region separated by an intrinsic region; and an optical waveguide including a plurality of optical waveguide sections aligned parallel to one another and disposed between the P-type doped region and the N-type doped region and within the intrinsic region of the diode structure. Further, the present disclosure provides a multi-pass thermal phase shifter device, including: a silicon structure including or coupled to one or more heater elements; and an optical waveguide including a plurality of optical waveguide sections aligned parallel to one another and disposed adjacent to the one or more heater elements. Optionally, at least two of the optical waveguide sections have different geometries and are separated by a predetermined gap.

公开(公告)号：US10955615B2

公开(公告)日：2021-03-23

申请号：US16511639

申请日：2019-07-15

Applicant: Ciena Corporation

Inventor： Marie-Josee Picard ,  Alexandre Delisle-Simard

IPC: G02B6/122 ,  G02B6/14 ,  G02B6/126 ,  G02B6/12

Abstract: A waveguide coupling structure includes: a first section that supports a mode that has an associated first intensity profile that substantially overlaps with an intensity profile associated with a mode supported by a first waveguide portion at a first end of the waveguide coupling structure; a second section that supports a mode that has an associated second intensity profile that substantially overlaps with an intensity profile associated with a mode supported by a second waveguide portion at a second end of the waveguide coupling structure; and a third section, between the first section and the second section, comprising a core structure on a bottom cladding and a supporting structure on the bottom cladding. The supporting structure: (1) overlaps with at least a portion of an intensity profile associated with a guided mode of the third section, and (2) has a shape that is asymmetric with respect to a propagation axis of the guided mode in a plane parallel to a surface of the bottom cladding.