公开(公告)号：US20210313284A1

公开(公告)日：2021-10-07

申请号：US17210660

申请日：2021-03-24

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Kwangmo Chris Lim ,  Qianli Mu

IPC: H01L23/66 ,  H01L29/20 ,  H01L29/16 ,  H01L25/065 ,  H01L23/538 ,  H03F3/195 ,  H03F3/193 ,  H03F3/213

Abstract: An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

公开(公告)号：US20210313282A1

公开(公告)日：2021-10-07

申请号：US16906610

申请日：2020-06-19

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu

IPC: H01L23/66 ,  H03F1/08 ,  H03F3/195

Abstract: A transistor amplifier includes a group III-nitride based amplifier die including a gate terminal, a drain terminal, and a source terminal on a first surface of the amplifier die and an interconnect structure electrically bonded to the gate terminal, drain terminal and source terminal of the amplifier die on the first surface of the amplifier die and electrically bonded to an input path and output path of the transistor amplifier.

公开(公告)号：US20200304074A1

公开(公告)日：2020-09-24

申请号：US16358985

申请日：2019-03-20

Applicant: Cree, Inc.

Inventor： Haedong Jang ,  Sonoko Aristud ,  Marvin Marbell ,  Madhu Chidurala

IPC: H03F1/02 ,  H03F3/19 ,  H03F1/56

Abstract: In an asymmetric Doherty amplifier circuit, one or more shunt reactive components are added to at least one side of an impedance inverter connecting the amplifier outputs, to reduce a capacitance imbalance between the two amplifiers caused by their different parasitic capacitances. This enables the (adjusted) parasitic capacitances to be incorporated into a quarter-wavelength transmission line, having a 90-degree phase shift, for the impedance inverter. In one embodiment, a shunt inductance is connected between the impedance inverter, on the side of the larger amplifier, and RF signal ground. The inductance is sized to resonate away substantially the excess parasitic capacitance of the larger amplifier. In another embodiment, a shunt capacitor is connected on the side of the smaller amplifier, thus raising its total capacitance to substantially equal the parasitic capacitance of the larger amplifier. In other embodiments shunt inductances and/or capacitors may be added to one or both amplifiers, and sized to effectively control a characteristic impedance of the impedance inverter.