公开(公告)号：US11837559B2

公开(公告)日：2023-12-05

申请号：US17211281

申请日：2021-03-24

Applicant: Cree, Inc.

Inventor： Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim ,  Basim Noori ,  Qianli Mu ,  Kwangmo Chris Lim ,  Marvin Marbell

IPC: H01L23/66 ,  H01L23/00 ,  H01L29/20 ,  H01L29/417 ,  H01L29/778

CPC classification number: H01L23/66 ,  H01L24/49 ,  H01L29/2003 ,  H01L29/41775 ,  H01L29/7786 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2224/49107 ,  H01L2924/13064 ,  H01L2924/1421 ,  H01L2924/30111

Abstract: RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.

公开(公告)号：US20220140794A1

公开(公告)日：2022-05-05

申请号：US17085367

申请日：2020-10-30

Applicant: Cree, Inc.

Inventor： Kenneth P. Brewer ,  Basim Noori ,  Marvin Marbell

IPC: H03F3/195 ,  H03F1/56 ,  H03F3/21

Abstract: RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

公开(公告)号：US20210376807A1

公开(公告)日：2021-12-02

申请号：US16888957

申请日：2020-06-01

Applicant: Cree, Inc.

Inventor： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC: H03F3/72 ,  H03F1/56 ,  H01Q1/52 ,  H03F3/21 ,  H03F3/19 ,  H03H2/00

Abstract: RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

公开(公告)号：US20210313286A1

公开(公告)日：2021-10-07

申请号：US17211281

申请日：2021-03-24

Applicant: Cree, Inc

Inventor： Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim ,  Basim Noori ,  Qianli Mu ,  Kwangmo Chris Lim ,  Marvin Marbell

IPC: H01L23/66 ,  H01L29/20 ,  H01L23/00 ,  H01L29/778 ,  H01L29/417

Abstract: RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.

公开(公告)号：US20210313285A1

公开(公告)日：2021-10-07

申请号：US17210674

申请日：2021-03-24

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Kwangmo Chris Lim ,  Qianli Mu

IPC: H01L23/66 ,  H01L29/16 ,  H01L25/065 ,  H01L23/538 ,  H03F3/195 ,  H03F3/193 ,  H03F3/213

Abstract: A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

公开(公告)号：US11837457B2

公开(公告)日：2023-12-05

申请号：US17018721

申请日：2020-09-11

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16 ,  H01L25/00 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L23/5389 ,  H01L23/49811 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L24/32 ,  H01L25/16 ,  H01L25/50 ,  H01L29/41741 ,  H01L29/4238 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2924/1033 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10344 ,  H01L2924/10346 ,  H01L2924/13064 ,  H01L2924/19105

Abstract: RF transistor amplifiers an RF transistor amplifier die having a semiconductor layer structure, an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement, and one or more circuit elements on the first and/or second side of the interconnect structure.

公开(公告)号：US20210313935A1

公开(公告)日：2021-10-07

申请号：US17215456

申请日：2021-03-29

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Qianli Mu ,  Kwangmo Chris Lim ,  Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim

IPC: H03F1/56 ,  H01L23/48 ,  H01L29/778 ,  H01L23/498 ,  H01L23/00 ,  H03F3/193

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

公开(公告)号：US11677362B2

公开(公告)日：2023-06-13

申请号：US17085367

申请日：2020-10-30

Applicant: Cree, Inc.

Inventor： Kenneth P. Brewer ,  Basim Noori ,  Marvin Marbell

IPC: H03F3/195 ,  H03F1/56 ,  H03F3/21

CPC classification number: H03F3/195 ,  H03F1/565 ,  H03F3/211 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

Abstract: RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

公开(公告)号：US20220360230A1

公开(公告)日：2022-11-10

申请号：US17313567

申请日：2021-05-06

Applicant: Cree, Inc.

Inventor： Marvin Marbell ,  Jonathan Chang ,  Haedong Jang ,  Qianli Mu ,  Michael LeFevre ,  Jeremy Fisher ,  Basim Noori

IPC: H03F1/02 ,  H03F1/56 ,  H01L23/66 ,  H01L23/498

Abstract: A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

公开(公告)号：US20210313293A1

公开(公告)日：2021-10-07

申请号：US17018762

申请日：2020-09-11

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu

IPC: H01L23/00 ,  H03F3/195 ,  H01L23/047 ,  H01L23/31 ,  H01L23/66

Abstract: A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.