摘要:
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要:
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要:
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要:
A method for determining a mask pattern is described. During the method, a first mask pattern that includes a plurality of second regions corresponding to the first regions of the photo-mask is provided. Then, a second mask pattern is determined based on the first mask pattern and differences between a target pattern and an estimate of a wafer pattern that results from the photolithographic process that uses at least a portion of the first mask pattern. Note that the determining includes different treatment for different types of regions in the target pattern, and the second mask pattern and the target pattern include pixilated images.
摘要:
A system and method for searching the Internet is presented wherein the search results are ordered and selected using one or more preference tools. One such tool consists of the user defining a reference index number that is employed to prioritize and re-rank at least some of the sites obtained by the search, comparing each site's parameters to the reference index number. Each index number includes several parameters in a preset order, each parameter being assigned a quantized relevance based on particular search criteria. Another tool makes use of at least one bundle of websites having particular user-settings designating credibility or trustworthiness. Websites from the search results are then accepted or ordered based on the contents of the bundles. Other tools adjust search criteria based on a desired number of search results and separate browser cookies into (1) those personally trusted and (2) all other cookies that are routinely purged.
摘要:
A patient is monitored during a medical procedure, such as spinal surgery, to identify a condition indicative of the possible onset of blindness or damage to the patient's eye or eyes. Parameters that may be monitored in this regard include ocular perfusion, retinal oxygen saturation and ocular pressure. In one implementation, a device for monitoring the desired parameters includes a contact lens with fiber optic pathways mounted thereon. Light of multiple wavelengths can be transmitted into the patient's eyes via input optical pathways. Output optical pathways are associated with a camera for obtaining images of an area of interest within the patient's eyes. The images can be processed to obtain information regarding ocular perfusion and/or oxygen saturation. Changes in this regard can be used to identify a condition of interest.
摘要:
Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks. Merit function may approximate electromagnetic field using model of mask pattern as infinitely thin, perfectly conducting pattern. Model may also be used for other lithographic methods, including simulation and verification.
摘要:
A system and associated methodology allow for monitoring ocular parameters of a patient. Parameters that may be monitored in this regard include ocular perfusion, retinal oxygen saturation and ocular pressure. In one implementation, a device for monitoring the desired parameters includes a contact lens with fiber optic pathways mounted thereon. Light of multiple wavelengths can be transmitted into the patient's eyes via input optical pathways. Output optical pathways are associated with a camera for obtaining images of an area of interest within the patient's eyes. The images can be processed to obtain information regarding ocular perfusion and/or oxygen saturation. Changes in this regard can be used to identify a condition of interest.
摘要:
A method for verifying a lithographic process is described. During the method, a set of guard bands are defined around a target pattern that is to be printed on a semiconductor die using a photo-mask in the lithographic process. An estimated pattern is calculated using a model of the lithographic process. This model of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path. Then, whether or not positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands is determined.
摘要:
Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified for mask manufacturing.