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    Method of sequestering metals using thiosulfate polymers
    21.
    发明授权
    Method of sequestering metals using thiosulfate polymers 有权
    使用硫代硫酸盐聚合物螯合金属的方法

    公开(公告)号：US08986924B2

    公开(公告)日：2015-03-24

    申请号：US14158890

    申请日：2014-01-20

    Applicant: Deepak Shukla ,  Kevin M. Donovan

    Inventor： Deepak Shukla ,  Kevin M. Donovan

    IPC: G03F7/26 ,  G03F7/038 ,  G03F7/32 ,  G03F7/40 ,  H01L21/00

    CPC classification number: G03F7/265 ,  G03F7/038 ,  G03F7/32 ,  G03F7/405 ,  H01L21/00

    Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequestering metals.

    Abstract translation: 硫代硫酸盐聚合物组合物包括电子接受光敏剂组分，作为单独的化合物或作为与硫代硫酸盐聚合物的连接。 硫代硫酸盐聚合物组合物可以应用于各种制品，或者用于在光热反应之后形成预定的聚合物图案以形成交联的二硫键，除去非交联聚合物和与二硫化物反应性材料的反应。 这种硫代硫酸盐聚合物组合物也可用于螯合金属。

    METHOD FOR REDUCING GRAPHITE OXIDE
    23.
    发明申请
    METHOD FOR REDUCING GRAPHITE OXIDE 审中-公开
    减少石墨氧化物的方法

    公开(公告)号：US20130180842A1

    公开(公告)日：2013-07-18

    申请号：US13352614

    申请日：2012-01-18

    Applicant: Thomas Nelson Blanton ,  Debasis Majumdar ,  E. Steven Brandt ,  Deepak Shukla

    Inventor： Thomas Nelson Blanton ,  Debasis Majumdar ,  E. Steven Brandt ,  Deepak Shukla

    IPC: C07B31/00

    CPC classification number: C01B32/184 ,  C01B32/23

    Abstract: Graphite oxide can be converted to its reduced form (r-GO) using exposing radiation having a peak wavelength (λmax) of less than 400 nm, and even less than 1 nm (X-rays). This conversion method is efficient and can be carried out with various forms of graphite oxide samples, with or without simultaneous application of heat, below atmospheric pressure, or in a reducing environment.

    Abstract translation: 使用峰值波长（lambdamax）小于400nm，甚至小于1nm（X射线）的曝光辐射，石墨氧化物可以转化成其还原形式（r-GO）。 该转化方法是有效的并且可以用各种形式的氧化石墨样品进行，具有或不具有同时施加的热量，低于大气压或在还原环境中。

    Aromatic amic acid salts and compositions
    25.
    发明授权
    Aromatic amic acid salts and compositions 有权
    芳香族酰胺酸盐和组合物

    公开(公告)号：US08404892B2

    公开(公告)日：2013-03-26

    申请号：US12788347

    申请日：2010-05-27

    Applicant: Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    IPC: C07C233/00 ,  C07C235/02

    CPC classification number: C07C233/65 ,  C07C211/62 ,  C07C211/63 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/42 ,  C07C2603/52 ,  C07D221/14 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0541 ,  H01L51/0545

    Abstract: Aromatic non-polymeric amic acid salts are designed to be thermally converted into corresponding arylene diimides. These aromatic, non-polymeric amic acid salts can be used to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the amic acid salt acts as an internal catalyst.

    Abstract translation: 芳族非聚合酰胺酸盐被设计为热转化成相应的亚芳基二酰亚胺。 这些芳族非聚合酰胺酸盐可用于制备可用于各种制品的半导体薄膜，包括可并入各种电子器件的薄膜晶体管器件。 以这种方式，亚芳基二酰亚胺不需要被涂覆，而是在相对较低的温度下由溶剂可溶的容易涂覆的芳族非聚合酰胺酸盐原位产生，因为酰胺酸盐的阳离子部分用作内部催化剂 。

    Photocurable compositions containing N-oxyazinium salt photoinitiators
    26.
    发明授权
    Photocurable compositions containing N-oxyazinium salt photoinitiators 有权
    含有N-氧嗪鎓盐光引发剂的光固化性组合物

    公开(公告)号：US08399533B2

    公开(公告)日：2013-03-19

    申请号：US12946074

    申请日：2010-11-15

    Applicant: Deepak Shukla

    Inventor： Deepak Shukla

    IPC: C08G59/68 ,  C08F20/22 ,  C08F299/02 ,  C08F2/50

    CPC classification number: C08F2/50

    Abstract: A photocurable composition includes at least one N-oxyazinium salt photoinitiator, a photosensitizer for the N-oxyazinium salt photoinitiator, an N-oxyazinium salt efficiency amplifier, and one or more photocurable acrylates. This composition can be cured using irradiation under high efficiency. Curing can be carried out in oxygen-containing environment.

    Abstract translation: 光固化性组合物包括至少一种N-氧嗪鎓盐引发剂，N-氧嗪鎓盐引发剂的光敏剂，N-氧嗪鎓盐效率放大器和一种或多种可光固化的丙烯酸酯。 该组合物可以高效率地使用照射而固化。 固化可在含氧环境中进行。

    PHOTOINITIATOR AND PHOTOCURABLE COMPOSITIONS AND USES
    27.
    发明申请
    PHOTOINITIATOR AND PHOTOCURABLE COMPOSITIONS AND USES 审中-公开
    光敏剂和光致抗蚀剂组合物和用途

    公开(公告)号：US20120295999A1

    公开(公告)日：2012-11-22

    申请号：US13108246

    申请日：2011-05-16

    Applicant: Deepak Shukla

    Inventor： Deepak Shukla

    IPC: C08F2/50 ,  C09K3/00 ,  C08F20/18

    CPC classification number: C08F2/50

    Abstract: The photocuring efficiency of an N-oxyazinium salt photoinitiator is increased by mixing it with an organic phosphine as a photoinitiator efficiency amplifier. This mixture or photoinitiator composition can be used to cure acrylates or other photocurable compounds, particularly in an oxygen-containing environment.

    Abstract translation: 通过将其与作为光引发剂效率放大器的有机膦混合来增加N-氧嗪鎓盐引发剂的光固化效率。 该混合物或光引发剂组合物可用于固化丙烯酸酯或其它可光固化的化合物，特别是在含氧环境中。

    METHODS OF PREPARING SEMICONDUCTIVE COMPOSITIONS AND DEVICES
    28.
    发明申请
    METHODS OF PREPARING SEMICONDUCTIVE COMPOSITIONS AND DEVICES 有权
    制备半导体组合物和器件的方法

    公开(公告)号：US20110269265A1

    公开(公告)日：2011-11-03

    申请号：US12770798

    申请日：2010-04-30

    Applicant: Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    IPC: H01L51/30 ,  H01L51/40

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0003 ,  H01L51/0541 ,  H01L51/0545

    Abstract: An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound.

    Abstract translation: 酰胺酸或酰胺酸酯前体可以施加到基底上并热转化成相应的亚芳基二酰亚胺的半导体层。 该半导体薄膜可以用于包括能够并入各种电子器件的薄膜晶体管器件的各种制品中。 以这种方式，亚芳基二酰亚胺不需要被涂覆，而是由溶剂可溶的容易涂覆的前体化合物原位产生。

    N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
    29.
    发明授权
    N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
    N，N'-二（芳基烷基）取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料

    公开(公告)号：US07981719B2

    公开(公告)日：2011-07-19

    申请号：US12474533

    申请日：2009-05-29

    Applicant: Deepak Shukla ,  Shelby F. Nelson ,  Diane C. Freeman

    Inventor： Deepak Shukla ,  Shelby F. Nelson ,  Diane C. Freeman

    IPC: H01L51/40

    CPC classification number: H01L51/0053 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0529 ,  H01L51/0545 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    30.
    发明授权
    Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    杂环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US07858970B2

    公开(公告)日：2010-12-28

    申请号：US11771196

    申请日：2007-06-29

    Applicant: Deepak Shukla ,  Thomas R. Welter ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Thomas R. Welter ,  Wendy G. Ahearn

    IPC: H01L35/24 ,  H01L51/00

    CPC classification number: H01L51/0053 ,  C09B57/08 ,  H01L51/0545 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

    Abstract translation: 一种薄膜晶体管包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到一个或两个酰亚胺氮原子上的取代或未取代的杂环烷基环系。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二触点或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过200℃。

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