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公开(公告)号：US20100267191A1
公开(公告)日：2010-10-21
申请号：US12763856
申请日：2010-04-20
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C16/4485 , C23C16/45565 , H01L31/03923
摘要： The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.
摘要翻译： 本发明通常提供一种形成光伏器件的方法，包括蒸发源材料以形成大分子加工气体，并使大分子处理气体通过气体分配喷头流入其中具有衬底的处理室的处理区域。 该方法包括生成小分子处理气体，并使小分子处理气体与已沉积在基板表面上的膜反应形成半导体膜。 此外，还可以使用可以使用这些方法的装置来实现连续的在线CIGS型太阳能电池的形成。
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公开(公告)号：US07675177B1
公开(公告)日：2010-03-09
申请号：US11074456
申请日：2005-03-07
申请人： Hongqiang Lu , Byung-Sung Kwak , Wilbur G. Catabay
发明人： Hongqiang Lu , Byung-Sung Kwak , Wilbur G. Catabay
CPC分类号： H01L21/76849 , H01L21/2885 , H01L21/76867 , H01L21/76877
摘要： A copper interconnect with a Sn coating is formed in a damascene structure by forming a trench in a dielectric layer. The trench is formed by electroplating copper simultaneously with a metal dopant to form a doped copper layer. The top level of the doped copper layer is reduced to form a planarized surface level with the surface of the first dielectric layer. The doped copper is annealed to drive the metal dopants to form a metal dopant capping coating at the planarized top surface of the doped copper layer.
摘要翻译： 通过在电介质层中形成沟槽，在镶嵌结构中形成具有Sn涂层的铜互连。 沟槽通过同时与金属掺杂剂电镀铜形成掺杂的铜层而形成。 掺杂铜层的顶层被还原成与第一介电层的表面形成平坦化的表面水平。 将掺杂的铜退火以驱动金属掺杂剂，以在掺杂铜层的平坦化顶表面上形成金属掺杂物覆盖涂层。
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公开(公告)号：US06884720B1
公开(公告)日：2005-04-26
申请号：US10648602
申请日：2003-08-25
申请人： Hongqiang Lu , Byung-Sung Kwak , Wilbur G. Catabay
发明人： Hongqiang Lu , Byung-Sung Kwak , Wilbur G. Catabay
IPC分类号： H01L21/288 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76849 , H01L21/2885 , H01L21/76867 , H01L21/76877
摘要： A copper interconnect with a Sn coating is formed in a damascene structure by forming a trench in a dielectric layer. The trench is formed by electroplating copper simultaneously with a metal dopant to form a doped copper layer. The top level of the doped copper layer is reduced to form a planarized surface level with the surface of the first dielectric layer. The doped copper is annealed to drive the metal dopants to form a metal dopant capping coating at the planarized top surface of the doped copper layer.
摘要翻译： 通过在电介质层中形成沟槽，在镶嵌结构中形成具有Sn涂层的铜互连。 沟槽通过同时与金属掺杂剂电镀铜形成掺杂的铜层而形成。 掺杂铜层的顶层被还原成与第一介电层的表面形成平坦化的表面水平。 将掺杂的铜退火以驱动金属掺杂剂，以在掺杂铜层的平坦化顶表面上形成金属掺杂物覆盖涂层。
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