公开(公告)号：US20080273766A1

公开(公告)日：2008-11-06

申请号：US12115250

申请日：2008-05-05

申请人： Hyun-Soo Kim ,  Je-Han Yoon ,  Hyun-Sik Shim ,  Young-Hee Park ,  Do-Hyung Kim ,  Woo-Han Yun

发明人： Hyun-Soo Kim ,  Je-Han Yoon ,  Hyun-Sik Shim ,  Young-Hee Park ,  Do-Hyung Kim ,  Woo-Han Yun

IPC分类号： G06K9/00

CPC分类号： G06K9/00295

摘要： A face recognition system based on adaptive learning includes a specific person detection and tracking unit for detecting and tracking a specific person from a moving image. A facial feature extraction unit extracts a plurality of facial feature vectors from the detected and tracked specific person. A face recognition unit searches for a given registration model by comparing the extracted facial feature vectors with facial feature vectors of the registration models previously stored in a user registration model database. A learning target selection unit selects a facial feature vector to be added to a record of the given registration model from among the extracted facial feature vectors. A registration model learning unit adds and updates the selected facial feature vector to the record of the given registration model.

摘要翻译： 基于自适应学习的面部识别系统包括用于从运动图像中检测和跟踪特定人物的特定人物检测和跟踪单元。 面部特征提取单元从检测到和跟踪的特定人物中提取多个面部特征向量。 面部识别单元通过将提取的面部特征向量与先前存储在用户登记模型数据库中的登记模型的面部特征向量进行比较来搜索给定的登记模型。 学习目标选择单元从所提取的面部特征向量中选择要添加到给定登记模型的记录的面部特征向量。 注册模型学习单元将所选择的面部特征向量添加并更新到给定注册模型的记录。

公开(公告)号：US20080020594A1

公开(公告)日：2008-01-24

申请号：US11827777

申请日：2007-07-13

申请人： Do-Hyung Kim ,  Ju-Bum Lee

发明人： Do-Hyung Kim ,  Ju-Bum Lee

IPC分类号： H01L21/31

CPC分类号： H01L45/1683 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144

摘要： In a method of manufacturing a phase-changeable memory device, a lower electrode is formed on a substrate. Silicon oxynitride is then deposited on the lower electrode at a temperature of about 450° C. to about 650° C. to form an insulating interlayer that is relatively dense on the lower electrode. The insulating interlayer is partially etched to form a contact hole exposing the lower electrode. A phase-changeable material layer pattern filling up the contact hole is formed on the insulating interlayer such that the phase-changeable material layer pattern makes contact with the lower electrode.

摘要翻译： 在制造相变存储器件的方法中，在基片上形成下电极。 然后在约450℃至约650℃的温度下将氮氧化硅沉积在下电极上，以形成在下电极上相对致密的绝缘中间层。 部分地蚀刻绝缘中间层以形成暴露下电极的接触孔。 在绝缘中间层上形成填充接触孔的相变材料层图案，使得相变材料层图案与下电极接触。

公开(公告)号：US20070132766A1

公开(公告)日：2007-06-14

申请号：US11634030

申请日：2006-12-05

申请人： Do-Hyung Kim ,  Seung-Woo Nam ,  In-Ho Lee

发明人： Do-Hyung Kim ,  Seung-Woo Nam ,  In-Ho Lee

IPC分类号： G06T15/70

CPC分类号： G06T17/00 ,  G06T2210/21 ,  Y10S345/958 ,  Y10S345/959

摘要： An apparatus processes collision information in a graphic system, and includes a first storage unit for loading geometry information of primary and secondary object graphics inputted from outside, and outputting the geometry information of the primary object graphics and geometry information of a plurality of secondary object graphics in which a collision detection operation with the primary object graphics is to be performed; a transformer for transforming coordinates of the secondary object graphics to be coincided with a coordinate system that is based on the primary object graphics; a processor for acquiring a collision point, collision presence information, and a collision depth between the primary and the secondary object graphics simultaneously based on the geometry information of the inputted primary object graphics and that of each of the coordinate-transformed secondary object graphics by using a collision detection operation technique determined by the geometry information properties of the primary and the secondary object graphics; a second storage unit for storing the collision information separately, wherein the collision depths before/after update are stored in two areas separately; and an updating unit for updating the collision point and the collision presence information whenever they are newly outputted from the processor, wherein the collision depth is updated based on the result of comparison with the previously stored collision depth.

摘要翻译： 一种装置处理图形系统中的碰撞信息，并且包括用于加载从外部输入的主要和次要对象图形的几何信息的第一存储单元，并且输出多个次要对象图形的主要对象图形和几何信息的几何信息 其中将执行具有主要对象图形的碰撞检测操作; 用于将辅助对象图形的坐标转换为与基于主要对象图形的坐标系重合的变换器; 基于所输入的主要对象图形的几何信息和每个坐标变换的辅助对象图形的处理器，通过使用用于获取碰撞点，碰撞存在信息和主要和次要对象图形之间的碰撞深度的处理器 由主要和次要对象图形的几何信息属性确定的碰撞检测操作技术; 第二存储单元，用于分别存储冲突信息，其中更新之前/之后的碰撞深度分别存储在两个区域中; 以及更新单元，用于每当从处理器新输出时更新碰撞点和冲突存在信息，其中基于与先前存储的冲突深度的比较结果来更新冲突深度。

公开(公告)号：US20070081321A1

公开(公告)日：2007-04-12

申请号：US11247882

申请日：2005-10-10

申请人： Seung-Ho Ahn ,  Do-Hyung Kim ,  Dong-Ho Lee

发明人： Seung-Ho Ahn ,  Do-Hyung Kim ,  Dong-Ho Lee

IPC分类号： G09F13/04

CPC分类号： G02F1/133615 ,  G02B6/0055 ,  G02B6/0068 ,  G02F1/133603 ,  G02F1/133604 ,  G02F1/133609

摘要： In a backlight unit and a display apparatus having the backlight unit, the backlight unit includes a first light source, a second light source, and an optical plate having a lower surface facing the second light source and an upper surface substantially parallel with the lower surface. The first light source generating a first light having a first wavelength range. The second light source generating a second light having a second wavelength range different from the first wavelength range to compensate the first light. Thus, display quality of display apparatus may be improved.

摘要翻译： 在具有背光单元的背光单元和显示装置中，背光单元包括第一光源，第二光源和具有面向第二光源的下表面的光学板和与下表面大致平行的上表面 。 第一光源产生具有第一波长范围的第一光。 第二光源产生具有与第一波长范围不同的第二波长范围的第二光，以补偿第一光。 因此，可以提高显示装置的显示质量。

公开(公告)号：US20060088194A1

公开(公告)日：2006-04-27

申请号：US10532301

申请日：2003-03-18

申请人： Jae Lee ,  Yun Chung ,  Jung Soh ,  Byung Chun ,  Ho Yoon ,  Kyu Han ,  Do-Hyung Kim ,  Yongwha Chung

发明人： Jae Lee ,  Yun Chung ,  Jung Soh ,  Byung Chun ,  Ho Yoon ,  Kyu Han ,  Do-Hyung Kim ,  Yongwha Chung

IPC分类号： G06K9/00

CPC分类号： G06K9/00154

摘要： In an apparatus for online signature verification, a signature data input unit digitalizes a locus of a user signature and reads the locus as a sequence of points. A first and a second pattern transform unit performs a speed equalization and a velocity transform on the signature sequence and generates a first and a second transformed pattern sequence, respectively. A characteristics extraction unit extracts three characteristics vectors from the signature sequence, the first and the second transformed pattern sequence, respectively, to thereby generate the three characteristics vectors. A difference vector estimation unit generates a difference vector. A determination unit determines whether an input signature and the reference signature are signed by a single person.

摘要翻译： 在用于在线签名验证的装置中，签名数据输入单元将用户签名的轨迹数字化，并将该轨迹读取为点序列。 第一和第二图案变换单元对签名序列执行速度均衡和速度变换，并分别产生第一和第二变换图案序列。 特征提取单元从签名序列，第一和第二变换图案序列分别提取三个特征向量，从而生成三个特征向量。 差矢量估计单元产生差矢量。 确定单元确定输入签名和参考签名是否由单个人签名。

公开(公告)号：US20050045921A1

公开(公告)日：2005-03-03

申请号：US10948883

申请日：2004-09-24

申请人： Do-Hyung Kim ,  Jin-Ho Kim ,  Byung-Jun Hwang

发明人： Do-Hyung Kim ,  Jin-Ho Kim ,  Byung-Jun Hwang

IPC分类号： H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8244 ,  H01L27/092 ,  H01L27/11 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/6653 ,  H01L21/76801 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/76895 ,  H01L21/823425 ,  H01L29/6659

摘要： A semiconductor device having LDD-type source/drain regions and a method of fabricating the same are provided. The semiconductor device includes at least a pair of gate patterns disposed on a semiconductor substrate and LDD-type source/drain regions disposed at both sides of the gate patterns. The substrate having the gate patterns and the LDD-type source/drain regions is covered with a conformal etch stop layer. The etch stop layer is covered with an interlayer insulating layer. The LDD-type source/drain region is exposed by a contact hole that penetrates the interlayer insulating layer and the etch stop layer. The method of forming the LDD-type source/drain regions and the etch stop layer includes forming low-concentration source/drain regions at both sides of the gate patterns and forming the conformal etch stop layer on the substrate having the low-concentration source/drain regions. Gate spacers are then formed on the sidewalls of the gate patterns. Using the gate patterns and the gate spacers as implantation masks, impurity ions are implanted into the semiconductor substrate to form high-concentration source/drain regions. The spacers are then selectively removed. An interlayer insulating layer is formed on the substrate where the spacers are removed.

摘要翻译： 提供具有LDD型源极/漏极区域的半导体器件及其制造方法。 半导体器件包括设置在半导体衬底上的至少一对栅极图案和设置在栅极图案两侧的LDD型源极/漏极区域。 具有栅极图案和LDD型源极/漏极区域的衬底被保形蚀刻停止层覆盖。 蚀刻停止层被层间绝缘层覆盖。 LDD型源极/漏极区域通过穿透层间绝缘层和蚀刻停止层的接触孔露出。 形成LDD型源极/漏极区域和蚀刻停止层的方法包括在栅极图案的两侧形成低浓度源极/漏极区域，并在具有低浓度源/漏极区域的衬底上形成保形蚀刻停止层， 漏区。 然后在栅极图案的侧壁上形成栅极间隔物。 使用栅极图案和栅极间隔物作为注入掩模，将杂质离子注入到半导体衬底中以形成高浓度源极/漏极区域。 然后选择性地去除间隔物。 在基板上形成层间绝缘层，其中隔离物被去除。

公开(公告)号：US06828210B2

公开(公告)日：2004-12-07

申请号：US10080884

申请日：2002-02-22

申请人： Do-Hyung Kim ,  Sung-Bong Kim ,  Jung-In Hong

发明人： Do-Hyung Kim ,  Sung-Bong Kim ,  Jung-In Hong

IPC分类号： H01L2176

CPC分类号： H01L21/76232

摘要： A method of forming a trench isolation in a semiconductor substrate is described, which comprises the steps of forming a trench on the substrate, forming a diffusion barrier insulating layer, forming a thermal oxide layer both sidewall and bottom of the trench contacted with the diffusion barrier insulating layer, forming a nitride liner, and forming trench isolation material to fill the trench. A multi-structure of the barrier layer and the thermal oxide layer is provided between the nitride liner and the trench, resulting in minimization of transistor characteristic deterioration. A thin thermal oxide layer is formed to achieve improved trench etching profile.

摘要翻译： 描述了在半导体衬底中形成沟槽隔离的方法，其包括以下步骤：在衬底上形成沟槽，形成扩散阻挡绝缘层，形成与扩散阻挡层接触的沟槽的侧壁和底部的热氧化物层 绝缘层，形成氮化物衬垫，以及形成沟槽隔离材料以填充沟槽。 在氮化物衬垫和沟槽之间设置阻挡层和热氧化物层的多结构，导致晶体管特性劣化的最小化。 形成薄的热氧化物层以实现改进的沟槽蚀刻轮廓。

公开(公告)号：US06768489B2

公开(公告)日：2004-07-27

申请号：US10166617

申请日：2002-06-12

申请人： Ii-Kwon Jeong ,  Ji Hyung Lee ,  Chang Joon Park ,  Do-Hyung Kim ,  Seung Woo Nam ,  In Ho Lee

发明人： Ii-Kwon Jeong ,  Ji Hyung Lee ,  Chang Joon Park ,  Do-Hyung Kim ,  Seung Woo Nam ,  In Ho Lee

IPC分类号： G06T1300

CPC分类号： G06T13/40 ,  A63F2300/6607

摘要： In a method for controlling a posture of an articulated object, a user inputs an initial configuration of the object, a base point, an end point, a target point and a method for updating the posture. It is determined whether the number of joints positioned between the base and the end points is larger than or equal to three. If the number is smaller than or equal to two, it is determined whether the method for updating the posture is a two-segment or three-segment based method or another method for moving an intermediate end point. If the method is two-segment or three-segment based, the number is rechecked. If the number is smaller than or equal to two, the posture is modified according to the two-segment or three-segment based method. If the posture satisfies a predetermined condition, it is displayed on a screen.

摘要翻译： 在用于控制关节物体的姿势的方法中，用户输入对象的初始配置，基点，终点，目标点和用于更新姿势的方法。 确定位于底座和终点之间的关节的数量是否大于或等于3。 如果该数量小于或等于2，则确定用于更新姿势的方法是基于两段还是三段的方法或用于移动中间终点的另一种方法。 如果方法是基于两段或三段的，则重新检查该数字。 如果数量小于或等于2，则根据两段式或三段式方法修改姿势。 如果姿势满足预定条件，则显示在屏幕上。

公开(公告)号：US06336339B1

公开(公告)日：2002-01-08

申请号：US09588649

申请日：2000-06-07

申请人： Il-Uk Joung ,  Do-Hyung Kim

发明人： Il-Uk Joung ,  Do-Hyung Kim

IPC分类号： F25D1900

CPC分类号： F25D21/04 ,  F25D17/045 ,  F25D2201/10 ,  F25D2500/02

摘要： A damper for refrigerators is disclosed. The damper of this invention effectively vaporizes moisture drops, condensed on a higher temperature surface of a damper's baffle due to a dewing phenomenon caused by a difference in temperature between opposite surfaces of the baffle, thus allowing the baffle to be almost free from freezing. In order to expose the moisture drops on the higher temperature surface of the baffle to cool air flowing through the cool air passage for the fresh compartment when the baffle is opened, the baffle is rotatably held by a rotating shaft installed on the central portion of the baffle or by a hinge pin spaced apart from the baffle by a distance. In the damper of this invention, the moisture drops, condensed on the higher temperature surface of the baffle due to a temperature difference between opposite surfaces of the baffle while the baffle is closed, are fully exposed to the dry cool air when the baffle is opened, and so it is possible for the moisture drops to be quickly evaporated and absorbed by the cool air. The damper of this invention thus effectively prevents its baffle from freezing due to the condensed moisture drops and allows the baffle to be smoothly operated without failure, and improves the operational reliability and market competitiveness of the refrigerators.

摘要翻译： 公开了一种用于冰箱的阻尼器。 本发明的阻尼器由于由挡板的相对表面之间的温差引起的脱流现象，有效地蒸发湿气滴，冷凝在阻尼器挡板的较高温度的表面上，从而允许挡板几乎没有冻结。 为了使挡板的较高温度的表面上的水滴露出，当挡板打开时，冷却流过新鲜室的冷空气通道的空气，挡板可旋转地保持在安装在中间部分的旋转轴上 挡板或通过与挡板间隔一定距离的铰链销。 在本发明的阻尼器中，当挡板打开时，由于挡板的相对表面之间的温差而在挡板的较高温度表面上的水分下降，当挡板被打开时，它们完全暴露于干燥的冷空气中 ，因此水滴可以被冷空气快速蒸发并吸收。 因此，本发明的阻尼器有效地防止了挡板由于冷凝的水分滴而冻结，并且允许挡板平稳地操作而没有故障，并且提高了冰箱的操作可靠性和市场竞争力。

公开(公告)号：US20160181521A1

公开(公告)日：2016-06-23

申请号：US14965616

申请日：2015-12-10

申请人： Do-Hyung Kim ,  Jong-Uk KIM ,  Dong-Ho AHN ,  Sung-Lae CHO

发明人： Do-Hyung Kim ,  Jong-Uk KIM ,  Dong-Ho AHN ,  Sung-Lae CHO

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/144 ,  C01B19/007 ,  C01P2006/40 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1683

摘要： A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), wherein an atomic concentration of the impurities X is in a range of 0

摘要翻译： 包含锗（Ge），锑（Sb），碲（Te）和至少一种类型的杂质X的可变电阻材料层。具有化学式Xp（GeaSb（1- ab）Teb）（1-p），其中杂质X的原子浓度在0