公开(公告)号：US08486775B2

公开(公告)日：2013-07-16

申请号：US13020467

申请日：2011-02-03

申请人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

发明人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC分类号： H01L21/84

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

公开(公告)号：US20110124163A1

公开(公告)日：2011-05-26

申请号：US13020467

申请日：2011-02-03

申请人： Byoung-June KIM ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

发明人： Byoung-June KIM ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC分类号： H01L21/336 ,  H01L21/84

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

摘要翻译： 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US20080185590A1

公开(公告)日：2008-08-07

申请号：US11930536

申请日：2007-10-31

申请人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

发明人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

摘要翻译： 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US08450129B2

公开(公告)日：2013-05-28

申请号：US13231225

申请日：2011-09-13

申请人： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

发明人： Hong-Kee Chin ,  Sang-Gab Kim ,  Woong-Kwon Kim ,  Yong-Mo Choi ,  Seung-Ha Choi ,  Shin-Il Choi ,  Ho-Jun Lee ,  Jung-Suk Bang ,  Yu-Gwang Jeong

IPC分类号： H01L33/16

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

公开(公告)号：US08088653B2

公开(公告)日：2012-01-03

申请号：US12604318

申请日：2009-10-22

申请人： Byoung-June Kim ,  Sung-Hoon Yang ,  Min-Seok Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Byoung-June Kim ,  Sung-Hoon Yang ,  Min-Seok Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： H01L21/00

CPC分类号： H01L29/78669 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。 栅电极形成在基板上; 在栅电极上形成有源层。 形成在有源层上的源电极和漏电极分开预定的距离。 缓冲层形成在有源层与源极和漏极之间。 缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。 形成缓冲层以抑制有源层的氧化，并降低接触电阻。

公开(公告)号：US07902553B2

公开(公告)日：2011-03-08

申请号：US11930536

申请日：2007-10-31

申请人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

发明人： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC分类号： H01L29/04

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

摘要翻译： 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US20100062574A1

公开(公告)日：2010-03-11

申请号：US12604318

申请日：2009-10-22

申请人： Byoung-June KIM ,  Sung-Hoon Yang ,  Min-Seok Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Byoung-June KIM ,  Sung-Hoon Yang ,  Min-Seok Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： H01L21/336

CPC分类号： H01L29/78669 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。 栅电极形成在基板上; 在栅电极上形成有源层。 形成在有源层上的源电极和漏电极分开预定的距离。 缓冲层形成在有源层与源极和漏极之间。 缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。 形成缓冲层以抑制有源层的氧化，并降低接触电阻。

公开(公告)号：US07615867B2

公开(公告)日：2009-11-10

申请号：US11538394

申请日：2006-10-03

申请人： Byoung-June Kim ,  Sung-Hoon Yang ,  Min-Seok Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

发明人： Byoung-June Kim ,  Sung-Hoon Yang ,  Min-Seok Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

IPC分类号： H01L29/417 ,  H01L29/49

CPC分类号： H01L29/78669 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。 栅电极形成在基板上; 在栅电极上形成有源层。 形成在有源层上的源电极和漏电极分开预定的距离。 缓冲层形成在有源层与源极和漏极之间。 缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。 形成缓冲层以抑制有源层的氧化，并降低接触电阻。