公开(公告)号：US20170084762A1

公开(公告)日：2017-03-23

申请号：US15369555

申请日：2016-12-05

Applicant: First Solar, Inc.

Inventor： Akhlesh Gupta ,  Rick C. Powell ,  David Eaglesham

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/02963 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

公开(公告)号：US20160126398A1

公开(公告)日：2016-05-05

申请号：US14994830

申请日：2016-01-13

Applicant: First Solar, Inc.

Inventor： Rick C. Powell ,  Upali Jayamaha ,  Anke Abken ,  Markus Gloeckler ,  Akhlesh Gupta ,  Roger T. Green ,  Peter Meyers

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L31/073 ,  H01L31/022466 ,  H01L31/02963 ,  H01L31/03042 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/50 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

公开(公告)号：US20130130433A1

公开(公告)日：2013-05-23

申请号：US13678800

申请日：2012-11-16

Applicant: FIRST SOLAR, INC.

Inventor： Akhlesh Gupta ,  Markus Gloeckler ,  Ricky C. Powell

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  B05B13/0221 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/56 ,  H01L21/02562 ,  H01L21/02664 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67706 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

Abstract translation: 公开了一种方法和装置，其中氯化镉沉积在碲化镉层上，同时热处理碲化镉层。