MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    21.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20140322893A1

    公开(公告)日:2014-10-30

    申请号:US14324626

    申请日:2014-07-07

    Abstract: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation or heat, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching a first surface of the treated member from the adhesive layer of the adhesive support, wherein the irradiation of the adhesive layer with an actinic ray, radiation or heat is conducted so that adhesiveness decreases toward an outer surface from an inner surface on the substrate side of the adhesive layer.

    Abstract translation: 一种用于制造具有处理部件的半导体器件的方法,包括:对具有基底的粘合剂支撑体和能够增加或降低粘合性的粘合剂层进行照射时的光化射线,辐射或加热以对所述粘合剂层进行照射 光化射线,辐射或热,将待处理部件的第一表面粘附到粘合剂支撑体的粘合剂层上,对不同于被处理物体的第一表面的第二表面进行机械或化学处理 构件,以获得处理构件,并且从粘合剂支撑体的粘合剂层分离处理构件的第一表面,其中进行具有光化射线,辐射或热的粘合剂层的照射,使得粘附性朝向外表面减小 从粘合剂层的基板侧的内表面。

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