公开(公告)号：US20220308449A1

公开(公告)日：2022-09-29

申请号：US17833904

申请日：2022-06-07

Applicant: FUJIFILM Corporation

Inventor： Toru TSUCHIHASHI ,  Satomi TAKAHASHI ,  Tetsuya SHIMIZU

IPC: G03F7/004

Abstract: The present invention provides a treatment liquid excellent in resolution, a property of suppressing reduction in film thickness, and a property of suppressing residues, in a case of being used for at least one of developing or washing a resist film. Further, the present invention provides a pattern forming method for the above-described treatment liquid. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for performing at least one of development or washing after exposure on a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the treatment liquid including a first organic solvent that satisfies a predetermined condition and a second organic solvent that satisfies a predetermined condition.

公开(公告)号：US20200368693A1

公开(公告)日：2020-11-26

申请号：US16992499

申请日：2020-08-13

Applicant: FUJIFILM Corporation

Inventor： Tadashi OMATSU ,  Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satomi TAKAHASHI

IPC: B01D61/58 ,  B01D61/08 ,  B01D61/18 ,  B01D65/02 ,  B01D69/02 ,  B01D69/12 ,  B01D3/14 ,  B01D71/36 ,  B01D71/26 ,  B01D71/56 ,  H01L21/67

Abstract: A filtering device for obtaining a chemical liquid by purifying a liquid to be purified has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a first resin having a hydrophilic group.

公开(公告)号：US20190064672A1

公开(公告)日：2019-02-28

申请号：US16172027

申请日：2018-10-26

Applicant: FUJIFILM Corporation

Inventor： Satoru MURAYAMA ,  Tetsuya SHIMIZU ,  Tetsuya KAMIMURA

IPC: G03F7/32 ,  H01L21/027

Abstract: An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

公开(公告)号：US20190025702A1

公开(公告)日：2019-01-24

申请号：US16143496

申请日：2018-09-27

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satoru MURAYAMA

IPC: G03F7/32 ,  G03F7/20 ,  H01L21/02

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed.A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

公开(公告)号：US20190011827A1

公开(公告)日：2019-01-10

申请号：US16129826

申请日：2018-09-13

Applicant: FUJIFILM Corporation

Inventor： Tetsuya SHIMIZU ,  Tsukasa YAMANAKA ,  Yukihisa KAWADA

IPC: G03F1/00 ,  G03F1/86 ,  G03F7/32 ,  G03F7/38 ,  H01J49/10

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.