摘要:
Provided are a curable composition which can be used to produce a cured film that does not easily allow a near infrared-absorbing pigment to be eluted even when the cured film is immersed in a solvent, a cured film, a near infrared cut filter, a camera module, and a method for manufacturing a camera module.The curable composition including: a near infrared-absorbing pigment (A) and a curable compound (B) having one or more atoms or groups selected from a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms.
摘要:
A solid-state imaging device comprises an image sensor, a circuit board, a support plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The image sensor is mounted on the circuit board. The circuit board is fixed to the support plate with the image sensor placed inside an opening of a plate body of the support plate. The sides of the image sensor are surrounded by the support plate. The IR cut filter is fixed to the support plate so as to cover the opening. The image sensor is disposed on an exit surface side of the taking lens. The IR cut filter is disposed between the taking lens and the image sensor. A light-shielding layer is formed over entire periphery of an inner wall of the plate body. Harmful rays are blocked by the light-shielding layer.
摘要:
An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.
摘要:
An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed.A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.
摘要:
The present invention relates to an infrared sensor, a near-infrared ray absorption composition, a photosensitive resin composition, a compound, a near-infrared ray absorption filter, and an image pick-up device. Provided is an infrared sensor 100 that detects an object by detecting light in wavelengths of 900 nm to 1,000 nm, including infrared ray transmission filters 113 and near-infrared ray absorption filters 111, in which the near-infrared ray absorption filters 111 contains a near-infrared ray absorption substance having a maximum absorption wavelength in wavelengths of 900 nm to 1,000 nm.
摘要:
Provided are an infrared sensor, a near-infrared absorbing composition, a cured film, a near-infrared absorbing filter, an image sensor, a camera module, and a compound. An infrared sensor 100 which has an infrared transmitting filter 113 and a near-infrared absorbing filter 111 and detects objects by detecting light having wavelengths of 700 nm or longer and shorter than 900 nm, in which the near-infrared absorbing filter 111 includes a near-infrared absorbing substance having a maximum absorption wavelength at a wavelength of 700 nm or longer and shorter than 900 nm.
摘要:
The present invention provides a green coloring composition for use in a color filter, which can form a green colored film having low incident-angle dependence and improves the color-separation properties of a solid-state imaging device including the colored film; and a colored film, a color filter, and a solid-state imaging device. The green coloring composition for use in a color filter of the present invention is a green coloring composition for use in a color filter, containing a green colorant, a near-infrared absorbent, and a polymerizable compound, in which when the green coloring composition for use in a color filter is used to form a colored film having a film thickness of 0.8 μm, the maximum value of the transmittance at a wavelength from 400 nm to 450 nm of the colored film is 5% or less, the maximum value of the transmittance at a wavelength from 500 nm to 600 nm of the colored film is 70% or more, the minimum value of the transmittance at a wavelength from 650 nm to less than 700 nm of the colored film is 20% or less, and the minimum value of the transmittance at a wavelength from 700 nm to 900 nm of the colored film is 30% or less.
摘要:
A method for manufacturing an electronic device, the method including performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor includes: a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; water; and one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A ratio T1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms is in a range from 1 ppt to 1 ppm.
摘要:
The present invention provides a red coloring composition for use in a color filter, which can form a red colored film having low incident-angle dependence and improves the color-separation properties of a solid-state imaging device including the colored film; and a colored film, a color filter, and a solid-state imaging device. The red coloring composition for use in a color filter of the present invention is a red coloring composition for use in a color filter, containing a red colorant, a near-infrared absorbent, and a polymerizable compound, in which when the coloring composition is used to form a colored film having a film thickness of 0.8 μm, the maximum value of the transmittance at a wavelength from 400 nm to 550 nm of the colored film is 7% or less, the minimum value of the transmittance at a wavelength from 600 nm to less than 700 nm of the colored film is 80% or more, and the minimum value of the transmittance at a wavelength from 700 nm to 900 nm of the colored film is 30% or less.
摘要:
A solid-state imaging device comprises a CMOS sensor, a circuit board, a ceramic plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The CMOS sensor is mounted on the circuit board. The circuit board is fixed to the ceramic plate such that the CMOS sensor is placed inside an opening of the ceramic plate. The sides of the CMOS sensor are surrounded by the ceramic plate. The IR cut filter is fixed to the ceramic plate so as to cover the opening. The CMOS sensor is disposed behind the taking lens. The IR cut filter is disposed between the taking lens and the CMOS sensor. A light-shielding layer is formed over the entire periphery of edge portions of an incident surface of the IR cut filter. Harmful rays such as reflective light is blocked by the light-shielding layer.