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公开(公告)号：US20220317563A1
公开(公告)日：2022-10-06
申请号：US17839432
申请日：2022-06-13
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tsukasa YAMANAKA , Yukihisa KAWADA
IPC: G03F1/68 , G03F7/40 , G03F7/32 , G03F7/11 , G03F7/039 , G03F7/16 , G03F7/00 , G03F1/86 , G03F7/38 , H01J49/10
Abstract: A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.
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公开(公告)号：US20190171102A1
公开(公告)日：2019-06-06
申请号：US16273323
申请日：2019-02-12
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Satomi TAKAHASHI , Yukihisa KAWADA
IPC: G03F7/004 , H01L21/027 , G03F7/038 , G03F7/20 , G03F1/66
Abstract: An object of the present invention is to provide a solution which is excellent in both the temporal stability of an organic solvent and the defect inhibition properties. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.The solution of the present invention is a solution containing an organic solvent and a stabilizer, in which a content of the stabilizer with respect to a total mass of the solution is 0.1 to 50 mass ppm.
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公开(公告)号：US20230097195A1
公开(公告)日：2023-03-30
申请号：US17902899
申请日：2022-09-05
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Masahiro YOSHIDOME , Yukihisa KAWADA , Ryo SAITO
Abstract: Provided are a method for inspecting a chemical solution, the method being able to analyze minute foreign matter in the chemical solution, a method for producing a chemical solution, a method for controlling a chemical solution, a method for producing a semiconductor device, a method for inspecting a resist composition, the method being able to analyze minute foreign matter in the resist composition, a method for producing a resist composition, a method for controlling a resist composition, and a method for checking a contamination status of a semiconductor manufacturing apparatus, the method being able to control minute foreign matter in the semiconductor manufacturing apparatus.
The method for inspecting a chemical solution includes a step 1X of preparing a chemical solution; a step 2X of applying the chemical solution onto a semiconductor substrate; and a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry.-
公开(公告)号：US20240216843A1
公开(公告)日：2024-07-04
申请号：US18606529
申请日：2024-03-15
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Masahiro YOSHIDOME , Yukihisa KAWADA
CPC classification number: B01D37/04 , B01D19/0404 , B01D27/00 , B01D39/1676 , B01D53/46 , B01J31/00 , B01J31/063 , B01J47/014 , B01D2257/60
Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.
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Patent Agency Ranking
公开(公告)号：US20200171434A1
公开(公告)日：2020-06-04
申请号：US16784976
申请日：2020-02-07
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Masahiro YOSHIDOME , Yukihisa KAWADA
Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by filtering a substance to be purified containing an organic solvent by using two or more kinds of filters having different pore sizes, in which a supply pressure P1 of the substance to be purified supplied to a filter Fmax having a maximum pore size X1 among the two or more kinds of filters and a supply pressure P2 of the substance to be purified supplied to a filter Fmin having a minimum pore size X2 among the two or more kinds of filters satisfy P1>P2.
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6.发明公开公开(公告)号：US20230395366A1
公开(公告)日：2023-12-07
申请号：US18451810
申请日：2023-08-17
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Masahiro YOSHIDOME , Yukihisa KAWADA , Ryo SAITO
CPC classification number: H01L21/02098 , H01L22/24 , H01L22/12 , G01N21/9501 , G01N2021/8838 , G01N21/8851 , G01N2021/8835 , G01N2021/8861 , G01N21/8806
Abstract: Provided are a defect removal device and a defect removal method capable of removing defects of a semiconductor substrate with high accuracy, and a pattern forming method and a method of manufacturing an electronic device using the semiconductor substrate from which defects on a surface are removed. The defect removal device includes: a first light source unit that emits incidence light for detecting a defect on a semiconductor substrate; a surface defect measurement unit including a detection unit that detects the defect on the semiconductor substrate based on radiated light radiated by reflection or scattering of the incidence light from the defect of the semiconductor substrate; a removal unit that irradiates the semiconductor substrate with laser light to remove the defect based on position information of the defect on the semiconductor substrate; and an alignment unit that adjusts optical axes of the incidence light and the laser light, in which the optical axes of the incidence light and the laser light are adjusted by the alignment unit such that the incidence light and the laser light are emitted to the semiconductor substrate.
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公开(公告)号：US20230369086A1
公开(公告)日：2023-11-16
申请号：US18357183
申请日：2023-07-24
Applicant: FUJIFILM Corporation
Inventor： Akihiko OHTSU , Masahiro YOSHIDOME , Yukihisa KAWADA , Ryo SAITO
CPC classification number: H01L21/67288 , H01L22/12 , H01J49/105 , G01N21/9501
Abstract: Provided are an analysis apparatus and an analysis method capable of analyzing a smaller defect on a surface of a semiconductor substrate. An analysis apparatus includes a surface defect measurement unit that measures presence or absence of a defect on a surface of a semiconductor substrate, and obtains positional information on the surface of the semiconductor substrate for the defect on the surface of the semiconductor substrate, and an analysis section that performs inductively coupled plasma mass spectrometry by irradiating the defect on the surface of the semiconductor substrate with laser light based on the positional information of the defect on the surface of the semiconductor substrate, and collecting an analysis sample obtained by the irradiation using a carrier gas.
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公开(公告)号：US20200181008A1
公开(公告)日：2020-06-11
申请号：US16787197
申请日：2020-02-11
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Masahiro YOSHIDOME , Yukihisa KAWADA
IPC: C03C17/245 , B65D23/02 , C03C17/00 , G03F7/004 , C09G1/00
Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time. The chemical liquid storage body according to an embodiment of the present invention includes a container and a chemical liquid stored in the container, in which the chemical liquid contains at least one kind of specific metal component selected from the group consisting of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.
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公开(公告)号：US20190011827A1
公开(公告)日：2019-01-10
申请号：US16129826
申请日：2018-09-13
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tsukasa YAMANAKA , Yukihisa KAWADA
Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.
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