公开(公告)号：US11199672B1

公开(公告)日：2021-12-14

申请号：US16901509

申请日：2020-06-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson Holt ,  Yusheng Bian ,  Andreas D. Stricker ,  Colleen Meagher ,  Michal Rakowski

IPC: G02B6/42 ,  H01L31/0232 ,  G02B6/12 ,  G02B6/13 ,  H01L31/18 ,  H01L31/028

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector may have a light-absorbing layer comprised of germanium. A waveguide core may be coupled to the light-absorbing layer. The waveguide core may be comprised of a dielectric material, such as silicon nitride. Another waveguide core, which may be comprised of a different material such as single-crystal silicon, may be coupled to the light-absorbing layer.

公开(公告)号：US11127843B2

公开(公告)日：2021-09-21

申请号：US16733528

申请日：2020-01-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson Holt ,  Alexander Derrickson ,  Ryan Sporer ,  George R. Mulfinger ,  Alexander Martin ,  Jagar Singh

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/10

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.

公开(公告)号：US20210091212A1

公开(公告)日：2021-03-25

申请号：US16733528

申请日：2020-01-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson Holt ,  Alexander Derrickson ,  Ryan Sporer ,  George R. Mulfinger ,  Alexander Martin ,  Jagar Singh

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/10 ,  H01L21/3065 ,  H01L29/66

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.