公开(公告)号：US06921622B2

公开(公告)日：2005-07-26

申请号：US10054532

申请日：2002-01-22

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: C08F234/04 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

CPC classification number: G03F7/0046 ,  C08F234/04 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device

Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂聚合物包括包含作为共聚单体的式1的光致抗蚀剂单体的重复单元，并且含有该光致抗蚀剂组合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和与晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成度半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺

公开(公告)号：US06861199B2

公开(公告)日：2005-03-01

申请号：US10609509

申请日：2003-06-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/09

CPC classification number: G03F7/0395 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/091 ,  Y10S430/108 ,  Y10S430/115

Abstract: TIMD (tetraisopropyl methylene diphosphonate) as a light absorbance depressant to a light source of a wavelength of less than 200 nm, and a photoresist composition containing the same are disclosed. The disclosed chemically amplified photoresist composition containing TIMD is useful for a VUV (vacuum ultraviolet) photoresist composition due to its low light absorbance to a light source of a wavelength of 157 nm.

Abstract translation: 公开了作为对波长小于200nm的光源的光吸收抑制剂的TIMD（四异丙基亚甲基二膦酸酯）和含有它们的光致抗蚀剂组合物。 所公开的含有TIMD的化学放大光致抗蚀剂组合物由于对波长为157nm的光源的低吸光度而适用于VUV（真空紫外）光致抗蚀剂组合物。

公开(公告)号：US06586619B2

公开(公告)日：2003-07-01

申请号：US10079753

申请日：2002-02-19

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: C07C6974

CPC classification number: C07D493/08 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  G03F7/039

Abstract: The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10) alkyl, substituted or non-substituted (C1-C10) ether, substituted or non-substituted (C1-C10) ester, or substituted or non-substituted (C1-C10) ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

Abstract translation: 本发明涉及可用于形成聚合物的新型单体，其可用于使用光谱的远紫外区域中的光源的光刻法，其共聚物和由其制备的光致抗蚀剂组合物。 本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚， 取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH2，CH2CH2，氧或硫; andi为0或1〜2的整数。

公开(公告)号：US06537724B1

公开(公告)日：2003-03-25

申请号：US09704265

申请日：2000-11-01

Applicant: Geun Su Lee ,  Jin Soo Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jin Soo Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/106

Abstract: The present invention provides photoresist resins and photoresist compositions comprising the same, which are useful in a resist flow process. The present invention also provides a process for forming a contact hole pattern using the same. In particular, the photoresist resin of the present invention comprises a mixture of polymers. Preferably, a mixture of a first copolymer and a second copolymer. In one aspect, the first and the second copolymers have different properties. Photoresist compositions of the present invention can be used to reduce or eliminate photoresist overflow during a resist flow process. In addition, photoresist compositions of the present invention allow formation of uniform sized patterns and improve standing wave effect.

Abstract translation: 本发明提供了包含该光刻胶的光致抗蚀剂树脂和光致抗蚀剂组合物，其可用于抗蚀剂流动过程。 本发明还提供一种使用其形成接触孔图案的方法。 特别地，本发明的光致抗蚀剂树脂包含聚合物的混合物。 优选地，第一共聚物和第二共聚物的混合物。 一方面，第一和第二共聚物具有不同的性质。 本发明的光刻胶组合物可用于在抗蚀剂流动过程中减少或消除光致抗蚀剂溢出。 此外，本发明的光致抗蚀剂组合物允许形成均匀尺寸的图案并改善驻波效应。

公开(公告)号：US06514665B1

公开(公告)日：2003-02-04

申请号：US09651809

申请日：2000-08-30

Applicant: Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

Abstract: The present invention relates to a compound that is useful as an additive for improving post exposure delay stability in a photoresist composition, and a photoresist composition containing the same. In particular, it has been found that a compound of the formula: where A, R1 to R3 are defined herein, can efficiently prevent or reduce the phenomenon of a lack of pattern formation and T-topping resulting from post exposure delay (PED) by reducing influences of environmental amine compounds. PED is a disadvantage of alicyclic compounds used in the lithography process using light sources such as KrF, ArF, VUV, E-beam, ion beam and EUV.

Abstract translation: 本发明涉及可用作改善光致抗蚀剂组合物中的曝光后延迟稳定性的添加剂的化合物和含有它们的光致抗蚀剂组合物。 特别地，已经发现，下式化合物：其中A，R 1至R 3在本文中定义，可以有效地防止或减少由后曝光延迟（PED）引起的图案形成和T形顶部缺乏的现象 减少环境胺化合物的影响。 PED是使用诸如KrF，ArF，VUV，电子束，离子束和EUV的光源的光刻工艺中使用的脂环族化合物的缺点。

公开(公告)号：US06455226B1

公开(公告)日：2002-09-24

申请号：US09704053

申请日：2000-11-01

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Hyeong Soo Kim ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Hyeong Soo Kim ,  Ki Ho Baik

IPC: C08F23204

CPC classification number: G03F7/0395 ,  C08F8/02 ,  C08F222/06 ,  C08F232/08 ,  Y10S430/106 ,  Y10S430/11

Abstract: The present invention provides photoresist polymers and photoresist compositions comprising the same. In one aspect, the photoresist polymer is of the Formula: where Y, R1, a, b and c are as described herein. Photoresist compositions of the present invention have good transmittance at wavelengths of 193 nm and 157 nm, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in aqueous TMAH solution, and are therefore suitable for lithography processes using VUV (157 nm) and EUV (13 nm) wavelength-light sources for fabricating a minute circuit of a high integration semiconductor device.

Abstract translation: 本发明提供了包含其的光致抗蚀剂聚合物和光致抗蚀剂组合物。 在一个方面，光致抗蚀剂聚合物具有下式：其中Y，R 1，a，b和c如本文所述。 本发明的光致抗蚀剂组合物在193nm和157nm的波长下具有良好的透光率，耐腐蚀性，耐热性和粘合性。 此外，本发明的光致抗蚀剂组合物可以在TMAH水溶液中容易地开发，因此适用于使用VUV（157nm）和EUV（13nm）波长光源的光刻工艺，用于制造高集成度的微小电路 半导体器件。

公开(公告)号：US06410670B1

公开(公告)日：2002-06-25

申请号：US09383861

申请日：1999-08-26

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: C08J13208

CPC classification number: C07D493/08 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  G03F7/039

Abstract: The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

Abstract translation: 本发明涉及新颖的单体及其聚合物，它们可用于光光谱在光谱的远紫外区域中的光刻，其共聚物和由其制备的光致抗蚀剂组合物。 本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚， 取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH 2，CH 2 CH 2，氧或硫; i为0或1〜2的整数。

公开(公告)号：US06403281B1

公开(公告)日：2002-06-11

申请号：US09643460

申请日：2000-08-22

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S525/91

Abstract: The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

Abstract translation: 本发明提供了式1的交联剂单体，衍生自包含其的单体的光致抗蚀剂聚合物和包含光致抗蚀剂聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物的交联单元可以通过暴露区域上的光致酸发生器产生的酸水解（或降解或破坏）。 据信交联单元的酸降解增加了曝光区域与未曝光区域之间的对比度。 本发明的光致抗蚀剂组合物具有改进的图案轮廓，增强的粘合性，优异的分辨率，灵敏度，耐久性和再现性。其中A，B，R1，R2，R3，R4，R5，R6和k如本文所定义。

公开(公告)号：US06235448B1

公开(公告)日：2001-05-22

申请号：US09448911

申请日：1999-11-24

Applicant: Geun Su Lee ,  Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: G03C172

CPC classification number: G03F7/0045 ,  G03F7/038 ,  G03F7/265

Abstract: The present invention relates to monomers and polymers prepared therefrom, which are suitable for forming photoresist compositions employed in lithography processes using a deep ultraviolet light source, in particular an ArF light source. According to the present invention, novel monomers represented by Chemical Formula 1, are provided: wherein R represents a C1-C10 alkyl group, and m is the number 1 or 2. as well as copolymers prepared by using said monomers as represented by Chemical Formula 8: wherein R represents a C1-C10 alkyl group; R′ represents H or —COOH; m is the number 1 or 2; n is a number from 1 to 3; and X represents CH2, NH or O; and a, b and c represent the number of repeating of the respective monomers.

Abstract translation: 本发明涉及由其制备的单体和聚合物，其适用于在使用深紫外光源，特别是ArF光源的光刻工艺中用于形成光刻胶组合物。根据本发明，由化学式1， 提供：其中R表示C1-C10烷基，m是数字1或2.以及通过使用由化学式8表示的所述单体制备的共聚物：其中R表示C1-C10烷基; R'表示H或-COOH; m是数字1或2; n是从1到3的数字; X表示CH 2，NH或O; a，b和c表示各单体的重复次数。

公开(公告)号：US6150069A

公开(公告)日：2000-11-21

申请号：US311488

申请日：1999-05-13

Applicant: Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: C07D493/08 ,  C08F22/06 ,  C08F32/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/039 ,  G03F7/0045

Abstract: The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.

Abstract translation: 本发明涉及氧杂双环化合物及其制备方法。 本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于使用紫外光源的光刻工艺中，并且由下式1表示：其中R1和R2相同或不同，并且 表示氢或C1-C4直链或支链取代的烷基; m是1至4的数。在其它实施方案中，本发明涉及含有氧杂双环单体的ArF或KrF光致抗蚀剂树脂，以及使用其的组合物和光致抗蚀剂微图案形成方法。