公开(公告)号：US09892964B1

公开(公告)日：2018-02-13

申请号：US15470387

申请日：2017-03-27

Applicant: SK hynix Inc. ,  Geun Su Lee

Inventor： Ji Won Moon ,  Jin Wook Jang ,  Sang Youl Yi ,  Sung Jae Lee ,  Geun Su Lee ,  Young Sun Lee ,  Min Su Kim

IPC: H01L23/58 ,  H01L21/768 ,  H01L21/28 ,  H01L21/311 ,  H01L21/04 ,  C08G77/18 ,  C08G77/20 ,  C08G77/00

CPC classification number: H01L21/76861 ,  C08G77/18 ,  C08G77/20 ,  C08G77/80 ,  H01L21/048 ,  H01L21/28 ,  H01L21/311

Abstract: A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

公开(公告)号：US07449538B2

公开(公告)日：2008-11-11

申请号：US11421897

申请日：2006-06-02

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: C08G77/04

CPC classification number: G03F7/0752 ,  G03F7/11

Abstract: Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

Abstract translation: 本文公开了包含硅化合物和羟基化合物的交联聚合物。 本文还公开了包含交联聚合物和有机溶剂的组合物。 该组合物可用作在制造半导体器件期间施加在下层上的硬掩模膜的一部分。 硬掩模膜在器件上形成均匀图案是有用的。

公开(公告)号：US07399570B2

公开(公告)日：2008-07-15

申请号：US10999416

申请日：2005-03-31

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/00 ,  G03F7/004 ,  G08F118/02

CPC classification number: G03F7/0382 ,  C08F8/44

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

Abstract translation: 使用包含水的光致抗蚀剂组合物，具有盐型重复单元的负性光致抗蚀剂聚合物和光致酸产生剂形成光刻胶图案，使得不能通过使用常规TMAH溶液而是通过使用水进行显影处理。 此外，由于组合物的主要溶剂是水，因此所公开的光致抗蚀剂组合物是环境友好的，并且在193nm和248nm处具有低吸光度，其在使用远紫外区域中的光源的光刻工艺中是有用的 当制造半导体器件的高集成精细电路时。

公开(公告)号：US07338742B2

公开(公告)日：2008-03-04

申请号：US10876029

申请日：2004-06-24

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/039 ,  G03F7/32

CPC classification number: G03F7/0046 ,  C07D327/04 ,  G03F7/0397

Abstract: The present invention relates to photoresist polymers and photoresist compositions. The disclosed photoresist polymers and photoresist compositions containing the same have excellent transmittance, etching resistance, thermal resistance and adhesive property, low light absorbance and high affinity to a developing solution at a wavelength of 193 nm and 157 nm, thereby improving LER (line edge roughness).

Abstract translation: 本发明涉及光致抗蚀剂聚合物和光致抗蚀剂组合物。 所公开的光致抗蚀剂聚合物和含有该光致抗蚀剂组合物的光致抗蚀剂组合物在193nm和157nm的波长下对显影液具有优异的透光率，耐蚀刻性，耐热性和粘合性，低吸光度和高亲和性，从而提高了LER（线边缘粗糙度 ）。

公开(公告)号：US07329477B2

公开(公告)日：2008-02-12

申请号：US10993869

申请日：2004-11-19

Applicant: Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/11 ,  G03F7/0045

Abstract: The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Abstract translation: 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

公开(公告)号：US07270934B2

公开(公告)日：2007-09-18

申请号：US10999412

申请日：2004-11-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/0382

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a photoacid generator, and a negative photoresist polymer. The polymer includes a basic-type repeating unit represented by Formula (I) (shown below), so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, since the main solvent of the composition is water, the disclosed photoresist composition is eco-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured. wherein R1, R2, R3, R4, R5, R6, R7, b, c, d and m are defined in the specification.

Abstract translation: 使用光致抗蚀剂组合物形成光致抗蚀剂图案，该组合物包括水，光致酸产生剂和负性光致抗蚀剂聚合物。 聚合物包括由式（I）表示的碱式重复单元（如下所示），从而可以不使用常规TMAH溶液而是通过使用水进行显影处理。 此外，由于组合物的主要溶剂是水，因此所公开的光致抗蚀剂组合物是环保的，并且在193nm和248nm具有低吸光度，其可用于在远紫外区域中使用光源的光刻工艺 制造半导体器件的高集成精密电路。 其中R 1，R 2，R 3，R 4，R 5， R 6，R 7，b，c，d和m在说明书中定义。

公开(公告)号：US20050282080A1

公开(公告)日：2005-12-22

申请号：US10999416

申请日：2005-03-31

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: C08F8/44 ,  G03C1/492 ,  G03F7/038

CPC classification number: G03F7/0382 ,  C08F8/44

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

Abstract translation: 使用包含水的光致抗蚀剂组合物，具有盐型重复单元的负性光致抗蚀剂聚合物和光致酸产生剂形成光刻胶图案，使得不能通过使用常规TMAH溶液而是通过使用水进行显影处理。 此外，由于组合物的主要溶剂是水，因此所公开的光致抗蚀剂组合物是环境友好的，并且在193nm和248nm处具有低吸光度，其在使用远紫外区域中的光源的光刻工艺中是有用的 当制造半导体器件的高集成精细电路时。

公开(公告)号：US20050026076A1

公开(公告)日：2005-02-03

申请号：US10903076

申请日：2004-07-30

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: G03F7/004 ,  C08F216/06 ,  C08F230/02 ,  G03C1/76 ,  G03F7/09

CPC classification number: C08F230/02 ,  C08F216/06 ,  G03F7/091

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I which is introduced to the top portion of photoresist, its preparation method and an anti-reflective coating composition, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source. More particularly, the present invention provides an organic anti-reflective coating polymer capable of protecting a photoresist from amine to improve the stability of a post exposure delay and to minimize pattern distortion caused by a swing phenomenon during a patterning process, its preparation method and an anti-reflective coating composition comprising the same. [formula I] wherein each of m and n is an integer ranging from 5 to 5,000.

Abstract translation: 公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其被引入到光致抗蚀剂的顶部，其制备方法和抗反射涂层组合物，用于形成光致抗蚀剂超细图案的工艺 用于通过使用193nm ArF或157nm VUV光源进行光刻。 更具体地说，本发明提供了一种能够保护光致抗蚀剂不受胺的有机抗反射涂层聚合物，以提高后曝光延迟的稳定性，并且使图案化过程中由摆动现象引起的图案变形最小化，其制备方法和 抗反射涂料组合物。 [式I]其中m和n各自为5至5,000的整数。

公开(公告)号：US06818376B2

公开(公告)日：2004-11-16

申请号：US10120197

申请日：2002-04-09

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/111

Abstract: The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

Abstract translation: 本发明提供了式1的交联剂单体，衍生自包含其的单体的光致抗蚀剂聚合物和包含光致抗蚀剂聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物的交联单元可以通过暴露区域上的光致酸发生器产生的酸水解（或降解或破坏）。 据信交联单元的酸降解增加了曝光区域与未曝光区域之间的对比度。 本发明的光致抗蚀剂组合物具有改进的图案轮廓，增强的粘合性，优异的分辨率，灵敏度，耐久性和再现性。其中A，B，R1，R2，R3，R4，R5，R6和k如本文所定义。

公开(公告)号：US06753448B2

公开(公告)日：2004-06-22

申请号：US10330869

申请日：2002-12-26

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: C07C49205

CPC classification number: G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

Abstract: The present invention provides compounds represented by formulas 1a and 1b′; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

Abstract translation: 本发明提供由式1a和1b'表示的化合物; 和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。