公开(公告)号：US6110821A

公开(公告)日：2000-08-29

申请号：US13823

申请日：1998-01-27

申请人： Gene Y. Kohara ,  Fusen Chen ,  Hyman Joseph Levinstein ,  Zheng Xu ,  Peijun Ding ,  Gongda Yao ,  Hong Zhang

发明人： Gene Y. Kohara ,  Fusen Chen ,  Hyman Joseph Levinstein ,  Zheng Xu ,  Peijun Ding ,  Gongda Yao ,  Hong Zhang

IPC分类号： C23C14/18 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76855 ,  C23C14/185 ,  C23C14/541 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76877

摘要： Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and deposition conditions of sputtering. Ionized titanium is sputtered cold, the temperature is rapidly increased by passing argon through the heated substrate support without sputtering, thereby initiating titanium silicide formation, and then the sputtering of titanium ions is continued at high temperatures to deposit titanium silicide.To deposit titanium silicide in very high aspect ratio openings, a first layer of titanium atoms is sputter deposited in conventional manner to line the sidewalls of the openings, followed by sputtering from a plasma and continuing with the above process.

摘要翻译： 将钛在电离金属等离子体溅射室中溅射，以在开口的底部原位形成硅化硅，该系列步骤改变了溅射的温度和沉积条件。 电离钛溅出冷却，通过在不溅射的情况下通过加热的衬底支撑通过氩气而迅速升高温度，从而引发硅化钛的形成，然后在高温下继续溅射钛离子以沉积硅化钛。 为了将钛硅化物沉积在非常高的纵横比开口中，以常规方式溅射沉积第一层钛原子，以对开口的侧壁进行排列，然后从等离子体溅射并继续上述过程。

公开(公告)号：US08158511B2

公开(公告)日：2012-04-17

申请号：US13068821

申请日：2011-05-20

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. Subsequently, a metal seed layer is deposited using the same techniques used to deposit the barrier layer, to avoid excessive build up of metal seed layer material on the openings to the features, with minimal sputtering of the barrier layer surface.

摘要翻译： 一种在晶片衬底上沉积具有下层阻挡层的金属种子层的方法，包括多个凹陷的器件特征。 阻挡层的第一部分沉积在晶片衬底上，而不会在与多个凹陷器件特征的开口上过多地形成阻挡层材料，同时获得底部覆盖而无需基本上溅射底部表面。 随后，使用与沉积阻挡层相同的技术沉积金属种子层，以避免金属种子层材料在具有特征的开口上的过度积累，同时阻挡层表面的溅射最少。

公开(公告)号：US07989343B2

公开(公告)日：2011-08-02

申请号：US12802701

申请日：2010-06-11

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of a copper seed layer on a wafer substrate without excessive build-up on the openings of each of the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. The method also comprises depositing a second portion of the metal seed layer while redistributing at least a portion of the bottom coverage material to the sidewalls of each recessed device feature, to provide a uniform seed layer coverage over the interior surface of the recessed device features.

摘要翻译： 我们公开了在包括多个凹入的装置特征的晶片衬底上沉积金属种子层的方法。 该方法包括在晶片衬底上沉积铜晶种层的第一部分，而不会在多个凹陷元件特征中的每一个的开口上过多地累积，同时获得底部覆盖而无需基本上溅射底面。 该方法还包括沉积金属种子层的第二部分，同时将底部覆盖材料的至少一部分重新分配到每个凹陷装置特征的侧壁，以在凹陷装置特征的内表面上提供均匀的种子层覆盖。

公开(公告)号：US20080166869A1

公开(公告)日：2008-07-10

申请号：US12075355

申请日：2008-03-10

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： A method of applying a sculptured copper seed layer on a semiconductor feature surface using ion deposition sputtering. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material.

摘要翻译： 使用离子沉积溅射在半导体特征表面上施加雕刻铜种子层的方法。 使用传统的溅射或离子沉积溅射将第一保护层材料沉积在衬底表面上，结合足够低的衬底偏压，使得施加层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。

公开(公告)号：US07074714B2

公开(公告)日：2006-07-11

申请号：US10981319

申请日：2004-11-03

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

摘要翻译： 我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻的材料层的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染。 使用传统的溅射或离子沉积溅射将第一保护层材料沉积在衬底表面上，结合足够低的衬底偏压，使得施加层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。 该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层。

公开(公告)号：US06919275B2

公开(公告)日：2005-07-19

申请号：US10796602

申请日：2004-03-08

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

摘要翻译： 我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻的材料层的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染。 使用传统的溅射或离子沉积溅射将第一保护层材料沉积在衬底表面上，结合足够低的衬底偏压，使得施加层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。 该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层。

公开(公告)号：US06299689B1

公开(公告)日：2001-10-09

申请号：US09524239

申请日：2000-03-13

申请人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

发明人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

IPC分类号： B05C1300

CPC分类号： H01L21/76877 ,  C23C16/4404 ,  Y10T24/44017

摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.

摘要翻译： 提供了用于回流材料层的方法和装置。 本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。 优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。 屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域 污染物可与吸气材料反应的护罩。 屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到 晶圆。

公开(公告)号：US06368880B2

公开(公告)日：2002-04-09

申请号：US09784709

申请日：2001-02-14

申请人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

发明人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

IPC分类号： H01L2100

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76877

摘要： The present invention provides an effective barrier layer for improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. In one aspect of the invention, a feature is filled by first depositing a barrier layer onto a substrate having high aspect ratio contacts or vias formed thereon. The barrier layer is preferably comprised of Ta, TaNx, W, WNx, or combinations thereof. A CVD conformal metal layer is then deposited over the barrier layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal layer is deposited onto the previously formed CVD conformal metal layer at a temperature below that of the melting point temperature of the metal to allow flow of the CVD conformal layer and the PVD metal layer into the vias.

摘要翻译： 本发明提供了一种有效的阻挡层，用于在低温下，特别是在衬底上的接触电平下，改进通孔填充高纵横比亚微米孔径。 在本发明的一个方面中，通过首先将阻挡层沉积到具有形成在其上的高纵横比触点或通孔的衬底上来填充特征。 阻挡层优选由Ta，TaNx，W，WNx或其组合构成。 然后在低温下将CVD保形金属层沉积在阻挡层上，以提供用于PVD金属的保形润湿层。 接下来，将PVD金属层沉积在预先形成的CVD保形金属层上，温度低于金属熔点温度的温度，以允许CVD保形层和PVD金属层流入通孔。

公开(公告)号：US06207558B1

公开(公告)日：2001-03-27

申请号：US09425082

申请日：1999-10-21

申请人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

发明人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76877

摘要： The present invention provides an effective barrier layer for improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. In one aspect of the invention, a feature is filled by first depositing a barrier layer onto a substrate having high aspect ratio contacts or vias formed thereon. The barrier layer is preferably comprised of Ta, TaNx, W, WNx, or combinations thereof. A CVD conformal metal layer is then deposited over the barrier layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal layer is deposited onto the previously formed CVD conformal metal layer at a temperature below that of the melting point temperature of the metal to allow flow of the CVD conformal layer and the PVD metal layer into the vias.

摘要翻译： 本发明提供了一种有效的阻挡层，用于在低温下，特别是在衬底上的接触电平下，改进通孔填充高纵横比亚微米孔径。 在本发明的一个方面中，通过首先将阻挡层沉积到具有形成在其上的高纵横比触点或通孔的衬底上来填充特征。 阻挡层优选由Ta，TaNx，W，WNx或其组合构成。 然后在低温下将CVD保形金属层沉积在阻挡层上，以提供用于PVD金属的保形润湿层。 接下来，将PVD金属层沉积在预先形成的CVD保形金属层上，温度低于金属熔点温度的温度，以允许CVD保形层和PVD金属层流入通孔。

公开(公告)号：US6077404A

公开(公告)日：2000-06-20

申请号：US24530

申请日：1998-02-17

申请人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

发明人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

IPC分类号： H01L21/3205 ,  C23C16/44 ,  H01L21/768 ,  C23C14/34

CPC分类号： H01L21/76877 ,  C23C16/4404 ,  Y10T24/44017

摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.

摘要翻译： 提供了用于回流材料层的方法和装置。 本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。 优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。 屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域 污染物可与吸气材料反应的护罩。 屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到 晶圆。