公开(公告)号：US06627906B2

公开(公告)日：2003-09-30

申请号：US10132785

申请日：2002-04-24

申请人： Noriyuki Hirayanagi

发明人： Noriyuki Hirayanagi

IPC分类号： H01J3708

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31794

摘要： Charged-particle-beam (CPB) microlithography methods are disclosed in which exposure dose on the lithographic substrate is controlled and adjusted as required to achieve proper exposure and maximal throughput, regardless of beam-transmissivity (e.g., membrane thickness) of the reticle in use. A reticle is provided with a transmitted-current-detection window exhibiting the same beam-transmissivity and forward-scattering behavior as a non-scattering membrane portion of the pattern-defining portion of the reticle. A charged-particle illumination beam is directed at the transmitted-current-detection window of the reticle. The beam current passing through the transmitted-current-detection window and reaching the wafer stage is sensed by a sensor located at or on the wafer stage. From the obtained beam-current data, a controller calculates the beam-current density on the wafer stage and calculates and sets a corresponding exposure time for exposing the wafer with an appropriate amount of exposure energy. Lithographic exposure is performed according to the set exposure time.

公开(公告)号：US06627903B1

公开(公告)日：2003-09-30

申请号：US09659205

申请日：2000-09-11

申请人： Noriyuki Hirayanagi

发明人： Noriyuki Hirayanagi

IPC分类号： G01N100

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： Methods are disclosed for performing a calibration of a charged-particle-beam (CPB) microlithography apparatus. In an embodiment, a specimen having a crystal-orientation plane is mounted on a specimen stage of the CPB microlithography apparatus. A charged particle beam (e.g., electron beam) produced by a suitable source passes through a CPB-optical system so as to irradiate the surface of the specimen. Using a deflector, the beam is scanned over an area of the specimen surface, and backscattered charged particles produced by the irradiated area of the specimen are detected. A corresponding electrical signal produced by detecting the backscattered particles is produced. The signal has a property that is a function of the specific crystalline properties of the specimen surface. From the signal, the relationship between the angle of incidence of the beam on the specimen surface versus the output of the deflector is determined and used to calibrate the beam axis of the CPB-optical system.

摘要翻译： 公开了用于执行带电粒子束（CPB）微光刻设备的校准的方法。 在一个实施例中，将具有晶体取向平面的样本安装在CPB微光刻设备的样品台上。 由合适的源产生的带电粒子束（例如，电子束）通过CPB光学系统以照射样品的表面。 使用偏转器，将光束扫描在样品表面的一个区域上，并且检测由样品的照射区域产生的反向散射的带电粒子。 产生通过检测背散射颗粒产生的对应的电信号。 该信号具有作为样品表面的特定结晶特性的函数的性质。 从信号中，确定样品表面上的光束的入射角与偏转器的输出之间的关系，并用于校准CPB光学系统的光束轴。

公开(公告)号：US06521900B1

公开(公告)日：2003-02-18

申请号：US09518431

申请日：2000-03-03

申请人： Noriyuki Hirayanagi

发明人： Noriyuki Hirayanagi

IPC分类号： H01J37304

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7053 ,  G03F9/7076 ,  H01J37/3045 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Alignment marks and methods using such marks are provided for use in charged-particle-beam (CPB, e.g., electron-beam) microlithography. The alignment marks are capable of being detected by both an optical-based alignment-mark sensor and a CPB-based alignment-mark sensor. A representative embodiment of such an alignment mark comprises multiple serially arrayed elements having a first period. At least one of the elements comprises multiple serially arrayed sub-elements having a second period that is shorter than the first period. When such a mark is sensed using an optical-based sensor, the period of the sub-elements is not resolvable and the resulting signal will be substantially the same as when none of the elements is subdivided into sub-elements. However, when such a mark is sensed using a CPB-based sensor and scanning the charged particle beam, then the period of the sub-elements is resolvable. Hence, a single alignment mark can be detected using either type of sensor.

摘要翻译： 提供使用这种标记的对准标记和方法用于带电粒子束（CPB，例如电子束）微光刻。 对准标记能够通过基于光学的对准标记传感器和基于CPB的对准标记传感器来检测。 这种对准标记的代表性实施例包括具有第一周期的多个串联排列的元件。 元件中的至少一个包括具有比第一周期短的第二周期的多个连续排列的子元件。 当使用基于光学的传感器感测到这样的标记时，子元件的周期不可解决，并且所得到的信号将与当没有元素被细分为子元素时基本相同。 然而，当使用基于CPB的传感器检测到这样的标记并扫描带电粒子束时，子元素的周期是可分辨的。 因此，可以使用任一类型的传感器来检测单个对准标记。

公开(公告)号：US08390783B2

公开(公告)日：2013-03-05

申请号：US12206720

申请日：2008-09-08

申请人： Noriyuki Hirayanagi ,  Keiichi Tanaka

发明人： Noriyuki Hirayanagi ,  Keiichi Tanaka

IPC分类号： G01B11/00 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54

CPC分类号： G03F7/70358 ,  G03F7/70783 ,  G03F9/7026 ,  G03F9/7034

摘要： A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is installed between the mask M and the projection optical system and defines an exposure area at the time of exposure.

摘要翻译： 一种用于测量具有从光源发出的光照射掩模M的功能的曝光装置中的掩模M的高度方向位置的方法，并且将形成在掩模M上的图案转印到诸如晶片的感光基板上， 投影光学系统，掩模表面高度方向位置测量方法，其特征在于在测量掩模M的高度方向位置之前移动曝光区域限定部件1，该曝光区域限定部件1安装在掩模M和投影光学系统之间并且限定 曝光时的曝光区域。

公开(公告)号：US07862961B2

公开(公告)日：2011-01-04

申请号：US11707003

申请日：2007-02-16

申请人： Noriyuki Hirayanagi

发明人： Noriyuki Hirayanagi

IPC分类号： G03F1/14 ,  G03B27/62

CPC分类号： G03F1/64 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/62

摘要： An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

摘要翻译： 曝光装置将图案从掩模转印到敏感基板上。 胶片保护面罩和胶片框架之间的掩模和胶片之间，保持膜与掩模的表面间隔开。 该膜对于必需波长的辐射具有第一透射率，并且对于不需要的波长的辐射具有第二透射率; 第一透射率高于第二透射率。 这部电影可能反映或吸收不必要的波长。 所需的波长可以是曝光波长，并且也可以在极紫外辐射的范围内。 掩模周围的气氛从施加到膜的一个表面的压力和施加的压力之间的差异的速度从空气气氛转变到减压气氛，或从减压气氛转变到空气气氛 到要保持在预定值或更小的膜的另一表面。

公开(公告)号：US20090015810A1

公开(公告)日：2009-01-15

申请号：US12206720

申请日：2008-09-08

申请人： Noriyuki Hirayanagi ,  Keiichi Tanaka

发明人： Noriyuki Hirayanagi ,  Keiichi Tanaka

IPC分类号： G03B27/42

CPC分类号： G03F7/70358 ,  G03F7/70783 ,  G03F9/7026 ,  G03F9/7034

摘要： A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is installed between the mask M and the projection optical system and defines an exposure area at the time of exposure.

摘要翻译： 一种用于测量具有从光源发出的光照射掩模M的功能的曝光装置中的掩模M的高度方向位置的方法，并且将形成在掩模M上的图案转印到诸如晶片的感光基板上， 投影光学系统，掩模表面高度方向位置测量方法，其特征在于在测量掩模M的高度方向位置之前移动曝光区域限定部件1，该曝光区域限定部件1安装在掩模M和投影光学系统之间并且限定 曝光时的曝光区域。

公开(公告)号：US07433017B2

公开(公告)日：2008-10-07

申请号：US11312389

申请日：2005-12-21

申请人： Noriyuki Hirayanagi ,  Keiichi Tanaka

发明人： Noriyuki Hirayanagi ,  Keiichi Tanaka

IPC分类号： G03B27/42

CPC分类号： G03F7/70358 ,  G03F7/70783 ,  G03F9/7026 ,  G03F9/7034

摘要： A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is arranged between the mask M and the projection optical system and defines an exposure area at the time of exposure.

摘要翻译： 一种用于测量具有从光源发出的光照射掩模M的功能的曝光装置中的掩模M的高度方向位置的方法，并且将形成在掩模M上的图案转印到诸如晶片的感光基板上， 投影光学系统，掩模表面高度方向位置测量方法，其特征在于在测量掩模M的高度方向位置之前移动曝光区域限定部件1，曝光区域限定部件1布置在掩模M和投影光学系统之间并且限定 曝光时的曝光区域。

公开(公告)号：US20080225261A1

公开(公告)日：2008-09-18

申请号：US12044813

申请日：2008-03-07

申请人： Noriyuki Hirayanagi

发明人： Noriyuki Hirayanagi

IPC分类号： G03B27/58

CPC分类号： H01L21/6719 ,  G03F7/70691 ,  G03F7/70708 ,  H01L21/67225 ,  H01L21/67745 ,  H01L21/681 ,  H01L21/6831 ,  H01L21/68742

摘要： An exposure apparatus is configured so that a wafer carrier robot can deliver a wafer to a wafer holder held by a holder carrier robot or can carry out a wafer from the wafer holder held by the holder carrier robot, under a reduced-pressure environment. According to the apparatus, even if it takes a relatively long time to replace the wafer on the wafer holder used inside the reduced pressure space, by performing the wafer exchange operation and a predetermined operation (the exposure apparatus main section operation) using the stage on which the wafer holder holding the wafer is mounted concurrently, the influence that the wafer exchange time has on the throughput can be suppressed.

摘要翻译： 曝光装置被配置为使得晶片载体机器人可以将晶片输送到由保持器托架机器人保持的晶片保持器，或者可以在减压环境下从保持架托架机器人保持的晶片保持器执行晶片。 根据该装置，即使在减压空间内使用的晶片保持架上更换晶片需要相当长的时间，通过使用阶段执行晶片更换操作和预定操作（曝光装置主要部分操作） 保持晶片的晶片保持器同时安装，可以抑制晶片更换时间对吞吐量的影响。

公开(公告)号：US06750464B2

公开(公告)日：2004-06-15

申请号：US09997854

申请日：2001-11-29

申请人： Jin Udagawa ,  Noriyuki Hirayanagi

发明人： Jin Udagawa ,  Noriyuki Hirayanagi

IPC分类号： G01N2186

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/30438

摘要： Alignment-mark patterns are disclosed that are defined on stencil reticles and that can be transferred lithographically from the reticle to a sensitized substrate using charged-particle-beam microlithography. The corresponding alignment marks as transferred to the substrate are detectable at high accuracy using an optical-based alignment-detection device (e.g., an FIA-based device). The transferred alignment marks can be used in place of alignment marks used in optical microlithography systems. An alignment-mark pattern as defined on a stencil reticle includes pattern elements that are split in any of various ways into respective pattern-element portions separated from each other on the membrane of the stencil reticle by “girders” (band-like membrane portions) that prevent the formation of islands in the stencil reticle and that prevent deformation of the pattern elements on the stencil reticle.

摘要翻译： 公开了对准标记图案，其定义在模版掩模版上，并且可以使用带电粒子束微光刻从光掩模将光刻转印到敏化基板上。 使用基于光学的对准检测装置（例如，基于FIA的装置），可以以高精度检测转移到基板的相应对准标记。 可以使用转移的对准标记来代替在光学微光刻系统中使用的对准标记。 在模板掩模版上限定的对准标记图案包括以各种方式以任何方式分割成通过“桁材”（带状膜部分）在模板标线片的膜上彼此分离的相应图案元件部分的图案元件， 其防止在模板掩模版中形成岛，并且防止图案元件在模板掩模版上的变形。

公开(公告)号：US06627905B1

公开(公告)日：2003-09-30

申请号：US09212975

申请日：1998-12-16

申请人： Noriyuki Hirayanagi

发明人： Noriyuki Hirayanagi

IPC分类号： H01J37304

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776 ,  H01J2237/31794

摘要： A charged-particle-beam exposure apparatus for exposing mask patterns onto a substrate includes a mask illumination system capable of varying the size and/or shape of the beam cross-section (the irradiated or mask-illumination field) at the mask. Initial mask alignment (rough alignment) and calibration are performed by irradiating respective alignment and calibration marks on the mask with a beam having a cross-sectional size smaller than the cross-sectional size of a beam used in the normal exposure process.

摘要翻译： 用于将掩模图案曝光到基板上的带电粒子束曝光装置包括能够改变掩模处的光束横截面（照射或掩模照明场）的尺寸和/或形状的掩模照射系统。 通过用横截面尺寸小于在正常曝光过程中使用的光束的横截面尺寸的光束照射掩模上的相应对准和校准标记来执行初始掩模对准（粗略对准）和校准。