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21.发明授权Positive photoresist composition and process and synthesizing polyphenol compound 失效正光致抗蚀剂组合物和工艺合成多酚化合物公开(公告)号：US06492085B1
公开(公告)日：2002-12-10
申请号：US09635404
申请日：2000-08-10
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译： 本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。
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22.发明授权公开(公告)号：US06406827B2
公开(公告)日：2002-06-18
申请号：US09322023
申请日：1999-05-28
IPC分类号： G03F7023
CPC分类号： G03F7/023 , G03F7/0226
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.
摘要翻译： 正型光致抗蚀剂组合物包括（A）碱溶性树脂，（B）例如双[2,5-二甲基-3-（2-羟基-5-甲基苄基）-4-羟基苯基]甲烷的醌二叠氮化物酯和 /或2,4-双[4-羟基-3-（4-羟基苄基）-5-甲基苄基] -6-环己基苯酚和（C）4,4'-双（二乙基氨基）二苯甲酮。 该组合物具有高灵敏度和清晰度，并且改善了焦深范围特性和曝光不足。
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23.发明授权公开(公告)号：US06177226B1
公开(公告)日：2001-01-23
申请号：US09069074
申请日：1998-04-29
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：多酚化合物的至少一种萘醌二叠氮化物磺酸酯，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。
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公开(公告)号：US6030741A
公开(公告)日：2000-02-29
申请号：US919368
申请日：1997-08-28
CPC分类号： G03F7/0048 , G03F7/0226
摘要： The present invention provides a positive resist composition and method capable of achieving a resist pattern whose photosensitivity is less variable relative to its thickness, which exhibits small thickness reduction even when the pattern is fine, is capable of coping with irregularities in the exposure value since it has a wide focal-depth range, and exhibits reduced size-deviation from the mask size. The positive resist composition comprises (A) an alkali-soluble resin, (B) a quinonediazide-group-containing compound, and (C) an organic solvent, wherein the ingredient (C) is a mixture solvent containing (i) 2-heptanone, (ii) ethyl lactate, and (iii) a high-boiling organic solvent having a boiling point of 200 to 350.degree. C. The above-described resist pattern can be formed by using the positive resist composition.
摘要翻译： 本发明提供一种能够实现光敏性相对于其厚度变化较小的抗蚀剂图案的正型抗蚀剂组合物和方法，即使图案细小也能显示小的厚度减小，因此可以应对曝光值的不规则性 具有宽的焦深范围，并且显示出与面罩尺寸的尺寸偏差的减小。 正型抗蚀剂组合物包含（A）碱溶性树脂，（B）含醌二叠氮化物基团的化合物和（C）有机溶剂，其中成分（C）是含有（i）2-庚酮 ，（ii）乳酸乙酯，和（iii）沸点为200〜350℃的高沸点有机溶剂。上述抗蚀剂图案可以通过使用正性抗蚀剂组合物形成。
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25.发明授权Positive photoresist compositions and multilayer resist materials using the same 失效正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5853948A
公开(公告)日：1998-12-29
申请号：US960621
申请日：1997-10-29
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , G03F7/11 , H01L21/027
CPC分类号： G03F7/0226
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin; (B) a quinonediazido group containing compound; and (C) at least one sulfonyl halide represented by the following general formula (I): R.sup.1 --SO.sub.2 --X (I) where R.sup.1 is an alkyl group, a substituted alkyl group, an alkenyl group, an aryl group or a substituted aryl group; X is a halogen atom, as well as a multilayer resist material using this composition. Very fine (
摘要翻译： 一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含有醌二叠氮基的化合物; 和（C）由以下通式（I）表示的至少一种磺酰卤：R1-SO2-X（Ⅰ）其中R1是烷基，取代的烷基，烯基，芳基或取代的芳基 组; X是卤素原子，以及使用该组合物的多层抗蚀剂材料。 可以形成具有高特征或边缘完整性的非常精细（<0.4μm）抗蚀剂图案，其在显影后在暴露区域和未曝光区域之间提供良好的对比度，并且确保更宽的曝光幅度，更好的聚焦深度特征和更清晰的 截面轮廓。
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公开(公告)号：US5702861A
公开(公告)日：1997-12-30
申请号：US791166
申请日：1997-01-30
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0226
摘要： A positive photoresist composition comprising: (A) an alkali-soluble resin; (B) a quinone diazide group-containing compound; and (C) at least one compound selected from the polyhydroxy compounds, such as 1,3-bis�2-(5-cyclohexyl-2-methyl-4-hydroxyphenyl)-2-propyl!benzene. The composition of the present invention exhibits excellent image contrast between exposed portions and unexposed portions, and actualizes formation of a resist pattern with excellent resolution, exposure range, and focal depth range.
摘要翻译： 一种正性光致抗蚀剂组合物，其包含：（A）碱溶性树脂; （B）含醌二叠氮基的化合物; 和（C）至少一种选自多羟基化合物的化合物，例如1,3-双[2-（5-环己基-2-甲基-4-羟基苯基）-2-丙基]苯。 本发明的组合物在曝光部分和未曝光部分之间显示出优异的图像对比度，并且实现了具有优异的分辨率，曝光范围和焦深范围的抗蚀剂图案的形成。
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27.发明授权Positive-working quinonediazide photoresist composition containing a cyclohexyl-substituted triphenylmethane compound 失效含有环己基取代的三苯基甲烷化合物的正性醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5501936A
公开(公告)日：1996-03-26
申请号：US362857
申请日：1994-12-23
申请人： Hiroshi Hosoda , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： An improved positive-working photoresist composition useful in the fine patterning work of a resist layer is proposed which is capable of giving a patterned resist layer having excellent resolution, heat resistance and orthogonality of the cross sectional profile of a line pattern with a high sensitivity to actinic rays and a wide range of the focusing depth. The photoresist composition comprises, as a uniform mixture in the form of a solution, (a) an alkali-soluble novolac resin, (b) a naphthoquinone-1,2-diazido group-containing compound as a photosensitizing ingredient and (c) a specific phenolic triphenyl methane compound substituted by cyclohexyl groups on two of the phenyl groups, such as bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-3,4-dihydroxyphenyl methane or bis(3-cyclohexyl-6-hydroxy-4-methylphenyl)-3,4-dihydroxyphenyl methane, in a specified amount.
摘要翻译： 提出了可用于抗蚀剂层的精细图案化工作的改进的正性光致抗蚀剂组合物，其能够提供具有高灵敏度的线图案的横截面轮廓的优异分辨率，耐热性和正交性的图案化抗蚀剂层 光化射线和广泛的聚焦深度。 光致抗蚀剂组合物包含作为溶液形式的均匀混合物，（a）碱溶性酚醛清漆树脂，（b）含萘醌-1,2-二叠氮基化合物作为光敏成分，（c） 在两个苯基上的环己基取代的特异性酚类三苯基甲烷化合物，例如双（3-环己基-4-羟基-6-甲基苯基）-3,4-二羟基苯基甲烷或双（3-环己基-6-羟基 - 4-甲基苯基）-3,4-二羟基苯基甲烷。
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28.发明授权
公开(公告)号：US5498514A
公开(公告)日：1996-03-12
申请号：US287895
申请日：1994-08-09
申请人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Taku Nakao , Hiroyuki Yamazaki , Nobuo Tokutake , Masato Saito , Hidekatsu Kohara , Toshimasa Nakayama
CPC分类号： G03F7/094
摘要： An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.
摘要翻译： 在其中由基底，底涂层流平层和光致抗蚀剂层组成的双面图案化板以及其图案化方法中提出了一种改进。 与由聚（甲基丙烯酸甲酯）树脂形成底层平整层的常规双面图案化板不同，本发明的层由特定共聚比例的甲基丙烯酸甲酯和甲基丙烯酸缩水甘油酯的共聚树脂形成，树脂为 与2,2'，4,4'-四羟基二苯甲酮混合。 由于使用这种独特的树脂组合物作为底层调平层，所以可以避免由于底层平整层和其上的光致抗蚀剂层之间的混合所引起的问题，以赋予图案化抗蚀剂层优异的性能。
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29.发明授权Positive photoresist composition and process for synthesizing polyphenol compound 失效正光致抗蚀剂组合物和合成多酚化合物的方法公开(公告)号：US06620978B2
公开(公告)日：2003-09-16
申请号：US10207840
申请日：2002-07-31
IPC分类号： C07C3912
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译： 本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。
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公开(公告)号：US06379859B2
公开(公告)日：2002-04-30
申请号：US09322978
申请日：1999-06-01
IPC分类号： G03F7023
CPC分类号： G03F7/0226 , G03F7/022
摘要： Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.
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