公开(公告)号：US08068165B2

公开(公告)日：2011-11-29

申请号：US12299711

申请日：2007-05-15

申请人： Miki Kobayashi

发明人： Miki Kobayashi

IPC分类号： G03B13/00 ,  G02B27/00

CPC分类号： G02B13/16 ,  G02B27/0927 ,  G02B27/0966 ,  H04N5/262 ,  H04N5/357

摘要： An imaging apparatus where images of good quality can be obtained without being affected by the diffraction phenomenon and without recourse to any polishing. The imaging apparatus is adapted to form a subject image on an imaging plane having light receptor elements arranged on it via an imaging optical system. The imaging optical system has a molded optical element fabricated through a fabrication process in which a periodic streak is produced on an optical surface. When a high-brightness subject light whose brightness value exceeds the saturation sensitivity of each light receptor element enters the imaging optical system, a nonessential light image resulting from the streak on the optical surface based on the high-brightness subject light is formed on the imaging plane and in an area of a subject image from the high-brightness subject light at the time when the optical plane is supposed to be free of the streak.

摘要翻译： 可以获得质量好的图像而不受衍射现象的影响并且不需要任何抛光的成像装置。 成像装置适于在成像平面上经由成像光学系统在其上布置有光接收元件的物体图像上形成。 成像光学系统具有通过制造工艺制造的模制光学元件，其中在光学表面上产生周期性条纹。 当亮度值超过每个光接收器元件的饱和灵敏度的高亮度被摄体光进入成像光学系统时，基于高亮度被摄体光从光学表面上的条纹产生的非必要光图像形成在成像 并且在光学平面假定为没有条纹时，来自高亮度被摄体光的被摄体图像的区域。

公开(公告)号：US06210855B1

公开(公告)日：2001-04-03

申请号：US09459876

申请日：1999-12-14

申请人： Takafumi Ueda ,  Hideto Kato ,  Toshihiko Fujii ,  Miki Kobayashi

发明人： Takafumi Ueda ,  Hideto Kato ,  Toshihiko Fujii ,  Miki Kobayashi

IPC分类号： G03F7023

CPC分类号： G03F7/0226 ,  G03F7/0233

摘要： A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.

公开(公告)号：US06177226B1

公开(公告)日：2001-01-23

申请号：US09069074

申请日：1998-04-29

申请人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F7023

CPC分类号： G03F7/022 ,  G03F7/0226

摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：多酚化合物的至少一种萘醌二叠氮化物磺酸酯，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。

公开(公告)号：US20070167450A1

公开(公告)日：2007-07-19

申请号：US10580417

申请日：2004-11-18

申请人： Miki Kobayashi ,  Satoshi Kubo

发明人： Miki Kobayashi ,  Satoshi Kubo

IPC分类号： A61K31/5377 ,  A61K31/4745

CPC分类号： C07D213/81 ,  A61K31/277 ,  A61K31/4375 ,  A61K31/4409 ,  A61K31/5377 ,  A61K2300/00

摘要： This invention relates to an agent for preventing or treating chronic pelvic pain syndromes (chronic abacterial prostatitis, chronic pelvic pain syndrome in a narrow sense and interstitial cystitis), which comprises various phosphodiesterase 4 (PDE 4) inhibitors such as cilomilast and roflumilast as an active ingredient.

摘要翻译： 本发明涉及预防或治疗慢性盆腔疼痛综合征（慢性非细菌性前列腺炎，狭义和间质性膀胱炎的慢性盆腔疼痛综合征）的药剂，其包含各种磷酸二酯酶4（PDE 4）抑制剂，例如西洛司特和罗氟司特作为活性物质 成分。

公开(公告)号：USD483356S1

公开(公告)日：2003-12-09

申请号：US29176181

申请日：2003-02-18

申请人： Miki Kobayashi

设计人： Miki Kobayashi

公开(公告)号：US5773200A

公开(公告)日：1998-06-30

申请号：US573578

申请日：1995-12-15

申请人： Satoshi Okazaki ,  Kazuhiro Nishikawa ,  Masaru Kobayashi ,  Miki Kobayashi ,  Mitsuo Umemura ,  Toshinobu Ishihara

发明人： Satoshi Okazaki ,  Kazuhiro Nishikawa ,  Masaru Kobayashi ,  Miki Kobayashi ,  Mitsuo Umemura ,  Toshinobu Ishihara

IPC分类号： G03F7/022 ,  G03F7/16 ,  G03F7/38 ,  G03F7/023 ,  G03F7/42

CPC分类号： G03F7/38 ,  G03F7/0226 ,  G03F7/168

摘要： A positive resist composition contains (1) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-10,000 as an alkali-soluble resin, (2) a low nucleus compound having a phenolic hydroxyl group and 2-5 benzene rings as a dissolution promoter, and (3) a compound having a 1,2-naphthoquinonediazidosulfonyl group in a molecule and a degree of esterification of at least 65% as a photosensitive agent. By forming a resist layer on a substrate from the positive resist composition, and baking the resist layer at 100.degree.-130.degree. C. before exposure or before development, followed by exposure and development, there is formed a resist pattern having a micro-groove of desired configuration. This resist pattern lends itself to a lift-off technique.

摘要翻译： 正型抗蚀剂组合物含有（1）作为碱溶性树脂的重均分子量为200〜10000的聚苯乙烯的酚醛清漆树脂，（2）具有酚性羟基的低核化合物和2-5个苯环， 溶解促进剂，和（3）分子中具有1,2-萘醌二叠氮基磺酰基的化合物和作为感光剂的至少65％的酯化度。 通过在正性抗蚀剂组合物的基材上形成抗蚀剂层，并在曝光前或显影前在100-130℃下烘烤抗蚀剂层，随后进行曝光和显影，形成具有微凹槽 的所需配置。 该抗蚀剂图案适用于剥离技术。

公开(公告)号：US20090135290A1

公开(公告)日：2009-05-28

申请号：US12299711

申请日：2007-05-15

申请人： Miki Kobayashi

发明人： Miki Kobayashi

IPC分类号： H04N5/232

CPC分类号： G02B13/16 ,  G02B27/0927 ,  G02B27/0966 ,  H04N5/262 ,  H04N5/357

摘要： The invention relates to an imaging apparatus wherein, even when there is a periodic streak produced on a molded optical element, images of good enough image quality can be obtained without being affected by the diffraction phenomenon yet without recourse to any polishing. The imaging apparatus is adapted to form a subject image on an imaging plane (6) having light receptor elements arranged on it via an imaging optical system (7). The imaging optical system (7) comprises a molded optical element (1) fabricated through a fabrication process in which a periodic streak (2) is produced on an optical surface. When high-brightness subject light whose brightness value exceeds the saturation sensitivity of each light receptor element enters the imaging optical system, a nonessential light image (11) resulting from the streak on the optical surface based on the high-brightness subject light is formed on the imaging plane (6) and in an area (10) of a subject image from the high-brightness subject light at the time when the optical plane is supposed to be free of the streak (2).

摘要翻译： 本发明涉及一种成像装置，其中，即使当在模制的光学元件上产生周期性条纹时，也可以获得足够好的图像质量的图像而不受衍射现象的影响，而无需求助于任何抛光。 成像装置适于在具有经由成像光学系统（7）布置在其上的光接收元件的成像平面（6）上形成被摄体图像。 成像光学系统（7）包括通过其中在光学表面上产生周期性条纹（2）的制造工艺制造的模制光学元件（1）。 当亮度值超过每个光接收元件的饱和灵敏度的高亮度被摄体光进入成像光学系统时，基于高亮度被摄体光从光学表面上的条纹产生的非必要光图像（11）形成在 成像平面（6）和在光学平面假定为没有条纹（2）时的来自高亮度被摄体光的被摄体图像的区域（10）中。

公开(公告)号：US06740662B1

公开(公告)日：2004-05-25

申请号：US10111077

申请日：2002-04-19

申请人： Masahiro Iwata ,  Noriyuki Kawano ,  Tomofumi Takuwa ,  Ryota Shiraki ,  Miki Kobayashi ,  Makoto Takeuchi

发明人： Masahiro Iwata ,  Noriyuki Kawano ,  Tomofumi Takuwa ,  Ryota Shiraki ,  Miki Kobayashi ,  Makoto Takeuchi

IPC分类号： A61K31435

CPC分类号： C07D471/04 ,  A61K31/4375 ,  A61K31/439 ,  A61K31/444 ,  A61K31/4545 ,  A61K31/496 ,  A61K31/497 ,  A61K31/5377

摘要： 2-Oxo-1,2-dihydro-1,8-naphthyridine derivatives characterized by bearing a specific substituent, —X—R6, at the 3-position and a cyclic substituent, R5, at the 4-position; or salts thereof. The derivatives and the salts are useful as drugs, particularly preventive or therapeutic agents for respiratory diseases related to PDE IV.

摘要翻译： 2-氧代-1,2-二氢-1,8-二氮杂萘衍生物，其特征在于在3-位具有特定取代基-X-R 6，在4-位具有环取代基R 5; 或其盐。 衍生物和盐可​​用作药物，特别是与PDE IV相关的呼吸道疾病的预防或治疗剂。

公开(公告)号：US06296992B1

公开(公告)日：2001-10-02

申请号：US09540539

申请日：2000-03-31

申请人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F730

CPC分类号： G03F7/022 ,  G03F7/0226

摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：至少一种多酚化合物的萘醌二叠氮化物，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。

公开(公告)号：US6127087A

公开(公告)日：2000-10-03

申请号：US98459

申请日：1998-06-17

申请人： Miki Kobayashi ,  Kousuke Doi ,  Sachiko Tamura ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Miki Kobayashi ,  Kousuke Doi ,  Sachiko Tamura ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F7/022 ,  G03F7/023

CPC分类号： G03F7/022

摘要： A positive photoresist composition comprises (A) an alkali-soluble resin, and (B) at least one quinonediazide group-containing compound in which part or all of the hydroxyl groups of a compound represented by the following formula (I) are esterified with a quinonediazidesulfonic acid: ##STR1## wherein each of R.sup.1 and R.sup.2 is an alkyl group having 1 to 5 carbon atoms, and "a" is 0 or 1. The present invention provides a positive photoresist composition which can form a resist pattern having high film residual rate, improved development contrast between exposed portions and unexposed portions, and satisfactory definition, exposure margin, focal depth range properties and sectional shape.

摘要翻译： 正型光致抗蚀剂组合物包含（A）碱溶性树脂和（B）至少一种含醌二叠氮化物基团的化合物，其中由下式（I）表示的化合物的部分或全部羟基被酯化 醌二叠氮化物：其中R 1和R 2各自为具有1至5个碳原子的烷基，“a”为0或1.本发明提供一种正型光致抗蚀剂组合物，其可以形成具有高膜残留率的抗蚀剂图案， 暴露部分和未曝光部分之间的对比度，以及令人满意的清晰度，曝光余量，焦点深度范围属性和截面形状。