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    Positive photoresist composition and process for forming contact hole
    1.
    发明授权
    Positive photoresist composition and process for forming contact hole 有权
    正光致抗蚀剂组合物和形成接触孔的方法

    公开(公告)号：US06296992B1

    公开(公告)日：2001-10-02

    申请号：US09540539

    申请日：2000-03-31

    申请人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    发明人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    IPC分类号： G03F730

    CPC分类号： G03F7/022 ,  G03F7/0226

    摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

    摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：至少一种多酚化合物的萘醌二叠氮化物，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。

    Positive photoresist composition and process for forming contact hole
    2.
    发明授权
    Positive photoresist composition and process for forming contact hole 失效
    正光致抗蚀剂组合物和形成接触孔的方法

    公开(公告)号：US06177226B1

    公开(公告)日：2001-01-23

    申请号：US09069074

    申请日：1998-04-29

    申请人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    发明人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    IPC分类号： G03F7023

    CPC分类号： G03F7/022 ,  G03F7/0226

    摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

    摘要翻译： 一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：多酚化合物的至少一种萘醌二叠氮化物磺酸酯，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链 位于其他亚甲基链的间位，并且提供每个苯环具有羟基。 根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像 方法。

    Alkali-developable positive-working photosensitive resin composition
    4.
    发明授权
    Alkali-developable positive-working photosensitive resin composition 失效
    碱显影正性感光树脂组合物

    公开(公告)号：US5384228A

    公开(公告)日：1995-01-24

    申请号：US134287

    申请日：1993-10-08

    申请人： Kousuke Doi ,  Satoshi Niikura ,  Nobuo Tokutake ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    发明人： Kousuke Doi ,  Satoshi Niikura ,  Nobuo Tokutake ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    IPC分类号： C07C309/76 ,  G03F7/022 ,  G03F7/023 ,  G03F7/30

    CPC分类号： G03F7/022 ,  C07C309/76

    摘要： A novel alkali-developable photosensitive resin composition, which is suitable for use as a photoresist composition for fine patterning in the manufacture of various electronic devices, is proposed. The photosensitive resin composition comprises, as the essential ingredients, (a) an alkali-soluble novolac resin as the film-forming ingredient and (b) a very specific compound which is a 1,2-quinone diazide sulfonic acid ester of a condensation product having a weight-average molecular weight of 400 to 2000 obtained by the condensation reaction between phenol and a hydroxybenzaldehyde in the presence of an acidic catalyst as the photosensitizing agent. By virtue of the formulation with this specific photosensitizer, the resist layer formed from the inventive composition has a greatly increased focusing latitude in addition to the excellent sensitivity, resolution and heat resistance.

    摘要翻译： 提出了一种新型的碱显影性感光性树脂组合物，其适合用作各种电子器件的制造中的精细图案化的光致抗蚀剂组合物。 感光性树脂组合物含有（a）作为成膜成分的碱溶性酚醛清漆树脂和（b）作为缩合产物的1,2-醌二叠氮基磺酸酯的非常特殊的化合物，作为必要成分 在酸性催化剂作为感光剂的存在下，通过苯酚与羟基苯甲醛之间的缩合反应得到的重均分子量为400〜2000。 由于使用该特定光敏剂的配方，除了优异的灵敏度，分辨率和耐热性之外，由本发明组合物形成的抗蚀剂层具有大大提高的聚焦纬度。

    Positive photoresist composition
    5.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号：US5702861A

    公开(公告)日：1997-12-30

    申请号：US791166

    申请日：1997-01-30

    申请人： Satoshi Niikura ,  Takako Suzuki ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    发明人： Satoshi Niikura ,  Takako Suzuki ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  H01L21/027

    CPC分类号： G03F7/0226

    摘要： A positive photoresist composition comprising: (A) an alkali-soluble resin; (B) a quinone diazide group-containing compound; and (C) at least one compound selected from the polyhydroxy compounds, such as 1,3-bis�2-(5-cyclohexyl-2-methyl-4-hydroxyphenyl)-2-propyl!benzene. The composition of the present invention exhibits excellent image contrast between exposed portions and unexposed portions, and actualizes formation of a resist pattern with excellent resolution, exposure range, and focal depth range.

    摘要翻译： 一种正性光致抗蚀剂组合物，其包含：（A）碱溶性树脂; （B）含醌二叠氮基的化合物; 和（C）至少一种选自多羟基化合物的化合物，例如1,3-双[2-（5-环己基-2-甲基-4-羟基苯基）-2-丙基]苯。 本发明的组合物在曝光部分和未曝光部分之间显示出优异的图像对比度，并且实现了具有优异的分辨率，曝光范围和焦深范围的抗蚀剂图案的形成。

    "> Positive-working quinone diazide composition containing N,N',N
    8.
    发明授权
    Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article 失效
    含N，N'，N“ - 取代的异氰脲酸酯化合物和相关制品的正性醌醌二叠氮化合物组合物

    公开(公告)号：US5332647A

    公开(公告)日：1994-07-26

    申请号：US111179

    申请日：1993-08-24

    申请人： Hayato Ohno ,  Nobuo Tokutake ,  Satoshi Niikura ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    发明人： Hayato Ohno ,  Nobuo Tokutake ,  Satoshi Niikura ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    IPC分类号： G03F7/022 ,  G03F7/09 ,  G03C1/61 ,  G03F7/023

    CPC分类号： G03F7/0226

    摘要： A positive-working photosensitive resin composition useful as a photoresist material in the fine patterning work for the manufacture of semiconductor devices is proposed. The composition is excellent in the storage stability and capable of giving a patterned resist layer having good film thickness retention, cross sectional profile of line patterns, resolution and heat resistance. The composition comprises, in addition to a conventional alkali-soluble novolac resin as a film-forming agent and a quinone diazide group containing compound as a photosensitizing agent, a specific isocyanurate compound substituted at each nitrogen atom with a hydroxy- and ter-butyl-substituted benzyl group.

    摘要翻译： 提出了用于制造半导体器件的精细图案化工作中用作光致抗蚀剂材料的正性感光性树脂组合物。 该组合物的保存稳定性优异，能够得到具有良好的膜厚保持性，线图案的横截面轮廓，分辨率和耐热性的图案化抗蚀剂层。 该组合物除了常规的作为成膜剂的碱溶性酚醛清漆树脂和含有醌二叠氮基的化合物作为感光剂之外，还包括在每个氮原子处被羟基和叔丁基取代的异氰脲酸酯化合物， 取代的苄基。

    Positive photoresist compositions and multilayer resist materials using the same
    10.
    发明授权
    Positive photoresist compositions and multilayer resist materials using the same 失效
    正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料

    公开(公告)号：US5728504A

    公开(公告)日：1998-03-17

    申请号：US652389

    申请日：1996-05-23

    申请人： Hiroshi Hosoda ,  Satoshi Niikura ,  Atsushi Sawano ,  Tatsuya Hashiguchi ,  Kazuyuki Nitta ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    发明人： Hiroshi Hosoda ,  Satoshi Niikura ,  Atsushi Sawano ,  Tatsuya Hashiguchi ,  Kazuyuki Nitta ,  Hidekatsu Kohara ,  Toshimasa Nakayama

    IPC分类号： G03F7/11 ,  G03F7/022 ,  G03F7/26 ,  H01L21/027 ,  G03F7/023

    CPC分类号： G03F7/022

    摘要： A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.

    摘要翻译： 一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂和（B）包含至少一种由以下通式（I）表示的化合物的光敏性组分：其中R 1，R 2和R 3是 各自独立地为氢原子，具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a，b和c为1-3的整数; l，m和n是1-3的整数，其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式（II）表示的基团的磺酸酯化：-SO 2 -R 5 （II）其中R5是取代或未取代的烷基，烯基或取代或未取代的芳基，从而形成混合酯，以及多层抗蚀剂材料，其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在 衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案，并允许更宽的曝光余量和更好的聚焦深度特性。