公开(公告)号：US08564172B2

公开(公告)日：2013-10-22

申请号：US13260798

申请日：2010-04-19

申请人： Shun-ichi Seki ,  Hiroki Kamiguchi ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Shun-ichi Seki ,  Hiroki Kamiguchi ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H03H9/25

CPC分类号： H03H9/02842 ,  H03H3/10 ,  H03H9/02834 ,  H03H9/725

摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor.

摘要翻译： 声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数。

公开(公告)号：US20130026881A1

公开(公告)日：2013-01-31

申请号：US13639119

申请日：2011-05-31

申请人： Shoji Okamoto ,  Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Shoji Okamoto ,  Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/047

CPC分类号： H03H9/14541 ,  H03H9/0222 ,  H03H9/02559

摘要： An IDT electrode includes a first electrode layer mainly made of Mo disposed above the piezoelectric body and a second electrode layer mainly made of Al disposed above the first electrode layer. The IDT electrode has a total thickness not more than 0.15λ. The first electrode layer has a thickness not less than 0.05λ. The second electrode layer has a thickness not less than 0.025λ.

摘要翻译： IDT电极包括主要由设置在压电体上方的Mo形成的第一电极层和设置在第一电极层上方的主要由Al制成的第二电极层。 IDT电极的总厚度不大于0.15λ。 第一电极层的厚度不小于0.05λ。 第二电极层的厚度不小于0.025λ。

公开(公告)号：US20110133858A1

公开(公告)日：2011-06-09

申请号：US13056813

申请日：2009-08-05

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H03H9/15 ,  H03H9/25

CPC分类号： H03H9/0222 ,  H03H9/02559 ,  H03H9/14541

摘要： An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on a piezoelectric device, a first dielectric layer disposed on the piezoelectric substrate such that it covers the IDT electrode, and a second dielectric layer disposed over the first dielectric layer. The second dielectric layer propagates transverse waves faster than that on the first dielectric layer. When a film thickness of the second dielectric layer is greater than a wave length of a major wave excited by the IDT electrode, a cut angle of the piezoelectric substrate in indication of Euler angles (φ, θ, Φ) is set to φ≠0°, θ≠0°, and Φ≠0°. This suppresses deterioration of device characteristics.

摘要翻译： 弹性波装置包括压电基板，设置在压电装置上的IDT电极，设置在压电基板上以覆盖IDT电极的第一电介质层和设置在第一介电层上的第二电介质层。 第二电介质层比第一电介质层上的横波更快地传播。 当第二电介质层的膜厚度大于由IDT电极激发的主波的波长时，表示欧拉角（＆phgr;＆Theta;Φ）的压电基板的切割角被设定为＆phgr ;≠0°，＆thetas;≠0°，Φ≠0°。 这抑制了器件特性的劣化。

公开(公告)号：US20110109196A1

公开(公告)日：2011-05-12

申请号：US12999369

申请日：2009-07-08

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/053

CPC分类号： H03H9/02559 ,  H03H9/02228 ,  H03H9/02574 ,  H03H9/02834

摘要： A plate wave element includes a piezoelectric body, a comb-shaped electrode disposed on an upper surface of the piezoelectric body, and a medium layer disposed on the upper surface of the piezoelectric body so as to cover the comb-shaped electrode. The comb-shaped electrode excites a Lamb wave as a main wave. The medium layer has a frequency temperature characteristic opposite to that of the piezoelectric body. The plate wave element has a preferable frequency temperature characteristic.

摘要翻译： 平板波形元件包括压电体，设置在压电体的上表面上的梳状电极和设置在压电体的上表面上以覆盖梳状电极的介质层。 梳状电极激发兰姆波作为主波。 介质层具有与压电体相反的频率温度特性。 板波元件具有优选的频率温度特性。

公开(公告)号：US20090267447A1

公开(公告)日：2009-10-29

申请号：US12428577

申请日：2009-04-23

申请人： Rei GOTO ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei GOTO ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/04

CPC分类号： H03H9/02559 ,  H03H9/02834

摘要： An acoustic wave device includes a piezoelectric substrate having a surface adapted to allow leaky surface wave to propagate thereon, an interdigital electrode provided on a portion of the surface of the piezoelectric substrate, and a dielectric layer provided on the surface of the piezoelectric substrate to cover the interdigital electrode. The piezoelectric substrate is made of lithium niobate. The dielectric layer is made of tantalum pentoxide. The piezoelectric substrate is made of a rotated Y-cut substrate having a cut angle which is not smaller than 2.5 degrees and is not larger than 22.5 degrees. A ratio H/λ of a film thickness H of the dielectric layer to a wavelength λ of a center frequency of the leaky surface wave ranges from 0.034 to 0.126. This acoustic wave device works in a wide band width.

摘要翻译： 声波装置包括：压电基板，其具有适于允许漏表面波传播的表面;设置在压电基板的表面的一部分上的叉指电极;以及设置在压电基板的表面上的电介质层， 叉指电极。 压电基板由铌酸锂制成。 电介质层由五氧化二钽制成。 压电基板由具有不小于2.5度且不大于22.5度的切割角度的旋转Y切割基板制成。 电介质层的膜厚H与漏表面波的中心频率的波长λ的比率H /λ为0.034〜0.126。 该声波装置工作在宽带宽。

公开(公告)号：US08698578B2

公开(公告)日：2014-04-15

申请号：US13319140

申请日：2010-05-24

申请人： Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Rei Goto ,  Joji Fujiwara

发明人： Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Rei Goto ,  Joji Fujiwara

IPC分类号： H03H9/00 ,  H03H9/64

CPC分类号： H03H9/6496 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02858 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/1452 ,  H03H9/14526 ,  H03H9/1457 ,  H03H9/725

摘要： An acoustic wave resonator includes a piezoelectric body, an IDT electrode for exciting an acoustic wave with wavelength λ, and a dielectric thin film provided so as to cover the IDT electrode. The IDT electrode includes a bus bar electrode region, a dummy electrode region, and an IDT cross region in order from outside. The film thickness of the dielectric thin film above at least one of the bus bar electrode region and the dummy electrode region is smaller than that above the IDT cross region by 0.1λ to 0.25λ. This configuration provides an acoustic wave resonator that reduces transverse-mode spurious emission.

摘要翻译： 声波谐振器包括压电体，用于激发波长为λ的声波的IDT电极和设置成覆盖IDT电极的电介质薄膜。 IDT电极从外部依次包括汇流条电极区域，虚拟电极区域和IDT交叉区域。 汇流条电极区域和虚拟电极区域中的至少一个之上的电介质薄膜的膜厚小于IDT横截面上的0.1λ至0.25λ的厚度。 该配置提供了减少横向杂散发射的声波谐振器。

公开(公告)号：US20110156837A1

公开(公告)日：2011-06-30

申请号：US12976030

申请日：2010-12-22

申请人： Takashi INOUE ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Shun-ichi Seki ,  Shoji Okamoto

发明人： Takashi INOUE ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura ,  Shun-ichi Seki ,  Shoji Okamoto

IPC分类号： H03H9/70

CPC分类号： H03H9/02897 ,  H01L2224/11 ,  H03H9/059

摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.

摘要翻译： 声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。 此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。 第一应力松弛层的弹性模量小于电介质层的弹性模量。

公开(公告)号：US20100219718A1

公开(公告)日：2010-09-02

申请号：US12680774

申请日：2008-10-21

申请人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

发明人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

IPC分类号： H01L41/09 ,  H01L41/04

CPC分类号： H03H9/0222 ,  H03H9/02574

摘要： A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.

摘要翻译： 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。

公开(公告)号：US20100060102A1

公开(公告)日：2010-03-11

申请号：US12552606

申请日：2009-09-02

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/04

CPC分类号： H03H9/02897 ,  H03H9/0222 ,  H03H9/02559 ,  H03H9/02818

摘要： An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.

摘要翻译： 声波装置具有：压电体; 布置在压电体上的叉指电极，激发声波; 以及布置在所述压电体上以覆盖所述叉指电极的电介质层。 电介质层包括由横波传播速度向上连续增大的介质构成的组成变更部。 利用这种配置，可以通过在介电层内部传播的高阶模式将杂散辐射移位到更高的频率，以便减少杂散辐射对高阶模式的影响。

公开(公告)号：US20090267449A1

公开(公告)日：2009-10-29

申请号：US12428591

申请日：2009-04-23

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/04

CPC分类号： H03H9/0222

摘要： The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.

摘要翻译： 本发明的弹性波装置具有压电基板; 设置在所述压电基板上的第一电介质层; 设置在所述第一电介质层上的第二电介质层; 以及在第二电介质层上的声层。 确定第一和第二介电层的每个膜厚度提供有利的效果。 也就是说，作为主波的SH波的能量被限制在压电基板和第一介电层之间的边界中，同时，SV波被抑制为不需要的波。 该装置允许其位移分布类似于斯派利波波的SV波在第二介电层的上表面上具有位移分布并且被设置在第二介电层上的声层抑制。