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公开(公告)号：US20110156837A1
公开(公告)日：2011-06-30
申请号：US12976030
申请日：2010-12-22
IPC分类号： H03H9/70
CPC分类号： H03H9/02897 , H01L2224/11 , H03H9/059
摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要翻译： 声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。 此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。 第一应力松弛层的弹性模量小于电介质层的弹性模量。
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公开(公告)号：US08576025B2
公开(公告)日：2013-11-05
申请号：US12976030
申请日：2010-12-22
CPC分类号： H03H9/02897 , H01L2224/11 , H03H9/059
摘要： An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要翻译： 声波装置包括压电基板，设置在压电基板上的IDT电极，设置为覆盖IDT电极的电介质层和设置在电介质层上的第一应力松弛层。 此外，声波器件包括连接到IDT电极并提取到第一应力松弛层上的引出电极和设置在引出电极上的凸块。 第一应力松弛层的弹性模量小于电介质层的弹性模量。
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公开(公告)号：US08564172B2
公开(公告)日：2013-10-22
申请号：US13260798
申请日：2010-04-19
IPC分类号： H03H9/25
CPC分类号： H03H9/02842 , H03H3/10 , H03H9/02834 , H03H9/725
摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor.
摘要翻译： 声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数。
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公开(公告)号：US20120019102A1
公开(公告)日：2012-01-26
申请号：US13260798
申请日：2010-04-19
IPC分类号： H01L41/047
CPC分类号： H03H9/02842 , H03H3/10 , H03H9/02834 , H03H9/725
摘要： An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor,
摘要翻译： 声波元件包括压电体，设置在压电体的上表面上的第一和第二叉指式换能器（IDT）电极，以及设置在压电体的上表面上以覆盖第一和第二IDT电极的第一介电层 。 第一电介质层具有位于第一IDT电极正上方的第一部分和位于第二IDT电极正上方的第二部分。 第一介电层的第二部分的上表面的高度大于第一介电层的第一部分的上表面的高度。 该声波元件具有优选的温度特性和机电耦合系数，
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公开(公告)号：US08669832B2
公开(公告)日：2014-03-11
申请号：US13125633
申请日：2010-02-23
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译： 声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。 第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。 所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。 加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。 在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。 该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。
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公开(公告)号：US20130026881A1
公开(公告)日：2013-01-31
申请号：US13639119
申请日：2011-05-31
申请人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
发明人： Shoji Okamoto , Rei Goto , Hidekazu Nakanishi , Hiroyuki Nakamura
IPC分类号： H01L41/047
CPC分类号： H03H9/14541 , H03H9/0222 , H03H9/02559
摘要： An IDT electrode includes a first electrode layer mainly made of Mo disposed above the piezoelectric body and a second electrode layer mainly made of Al disposed above the first electrode layer. The IDT electrode has a total thickness not more than 0.15λ. The first electrode layer has a thickness not less than 0.05λ. The second electrode layer has a thickness not less than 0.025λ.
摘要翻译： IDT电极包括主要由设置在压电体上方的Mo形成的第一电极层和设置在第一电极层上方的主要由Al制成的第二电极层。 IDT电极的总厚度不大于0.15λ。 第一电极层的厚度不小于0.05λ。 第二电极层的厚度不小于0.025λ。
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公开(公告)号：US20110193655A1
公开(公告)日：2011-08-11
申请号：US13125633
申请日：2010-02-23
IPC分类号： H03H9/54
CPC分类号： H03H9/02992 , H03H3/08 , H03H9/02685 , H03H9/14517
摘要： An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region. This acoustic wave device prevents short circuits between the IDT electrode and the separate electrode, and provides excellent characteristics of suppressing unwanted waves.
摘要翻译： 声波装置包括叉指式换能器（IDT）电极和面向IDT电极的单独电极。 IDT电极包括彼此面对的第一和第二梳状电极。 第一梳状电极包括第一汇流条，第一交叉指状电极指和第一虚拟电极指。 所述第二梳状电极包括与所述第一交叉指状物电极指相交叉的第二汇流条第二交叉指状电极指，所述第二虚拟电极指指向所述第一交叉指状电极指，所述加权部和非加权部。 加权部分在第二交叉指状电极指和第二虚拟电极指之间的空间具有电极。 在非加重部分中，在非叉指区域中最靠近分离电极的空间之外的空间中不存在电极。 该声波装置防止IDT电极和分离电极之间的短路，并且提供抑制不想要的波的优良特性。
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公开(公告)号：US20100219718A1
公开(公告)日：2010-09-02
申请号：US12680774
申请日：2008-10-21
申请人： Kazunori Nishimura , Hiroyuki Nakamura , Hidekazu Nakanishi , Ryouichi Takayama , Takashi Inoue
发明人： Kazunori Nishimura , Hiroyuki Nakamura , Hidekazu Nakanishi , Ryouichi Takayama , Takashi Inoue
CPC分类号： H03H9/0222 , H03H9/02574
摘要： A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.
摘要翻译： 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。
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公开(公告)号：US08154171B2
公开(公告)日：2012-04-10
申请号：US12680774
申请日：2008-10-21
申请人： Kazunori Nishimura , Hiroyuki Nakamura , Hidekazu Nakanishi , Ryouichi Takayama , Takashi Inoue
发明人： Kazunori Nishimura , Hiroyuki Nakamura , Hidekazu Nakanishi , Ryouichi Takayama , Takashi Inoue
IPC分类号： H03H9/25
CPC分类号： H03H9/0222 , H03H9/02574
摘要： A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.
摘要翻译： 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。
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10.发明授权Band elimination filter, filter device, antenna duplexer and communication apparatus 失效带消除滤波器，滤波器装置，天线双工器和通信装置公开(公告)号：US07084718B2
公开(公告)日：2006-08-01
申请号：US10657944
申请日：2003-09-09
申请人： Hiroyuki Nakamura , Shun-Ichi Seki , Keiji Onishi
发明人： Hiroyuki Nakamura , Shun-Ichi Seki , Keiji Onishi
CPC分类号： H03H9/6409 , H03H9/02118 , H03H9/0542 , H03H9/0557 , H03H9/542 , H03H9/547 , H03H9/564 , H03H9/6483
摘要： A band elimination filter includes an input terminal and an output terminal. A capacitor is coupled between a first terminal connected to the input terminal and a second terminal connected to the output terminal. The first terminal is grounded only via a first grounding point. The second terminal is grounded only via a second grounding point. A first acoustic resonator is connected between the first terminal and the first grounding point and a second acoustic resonator is connected between the second terminal and the second grounding point.
摘要翻译： 带除滤波器包括输入端子和输出端子。 电容器耦合在连接到输入端子的第一端子和连接到输出端子的第二端子之间。 第一个端子仅通过第一个接地点接地。 第二个端子仅通过第二个接地点接地。 第一声谐振器连接在第一端子和第一接地点之间，第二声谐振器连接在第二端子和第二接地点之间。
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