公开(公告)号：US07109098B1

公开(公告)日：2006-09-19

申请号：US11131904

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/26

CPC分类号： H01L21/268 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/26513 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146

摘要： A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

摘要翻译： 在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流 路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

公开(公告)号：US07094316B1

公开(公告)日：2006-08-22

申请号：US09638075

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

发明人： Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

IPC分类号： C23C16/00 ,  C23F1/02

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

摘要翻译： 一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。 至少一个中空管道连接到第一和第二开口。 通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。 工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。 线圈天线​​耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

公开(公告)号：US07037813B2

公开(公告)日：2006-05-02

申请号：US10646612

申请日：2003-08-22

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： H01L21/04 ,  H01L21/84

CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.

摘要翻译： 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定加工区域， 并且将包括待植入物种的工艺气体引入到工件的表面层中。 该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。 该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

公开(公告)号：US07001246B2

公开(公告)日：2006-02-21

申请号：US10447165

申请日：2003-05-27

申请人： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

发明人： Hiroji Hanawa ,  Nils Johansson ,  Boguslaw Swedek ,  Manoocher Birang

IPC分类号： B24B49/00

CPC分类号： B24B37/013 ,  B24B37/205 ,  B24B49/02 ,  B24B49/105 ,  B24B49/12 ,  G01B7/105

摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

公开(公告)号：US20050230047A1

公开(公告)日：2005-10-20

申请号：US11046659

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01J37/32 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for performing plasma immersion ion implantation, dopant deposition or surface material enhancement, includes a vacuum chamber, a wafer support pedestal or electrostatic chuck having an insulated electrode underlying a wafer support surface within said chamber, a chucking voltage source coupled to the insulated electrode, a thermal sink coupled to the electrostatic chuck, an RF bias power generator coupled to said electrostatic chuck, and a process gas supply and gas inlet ports coupled to the chamber and coupled to the gas supply. The process gas supply contains either (a) a gas containing a dopant species to be ion implanted in a semiconductive material of workpiece, (b) a gas containing a dopant species to be deposited on a surface of a semiconductive material of a workpiece, or (c) a gas containing a material enhancement species to be ion implanted into a workpiece.

摘要翻译： 用于执行等离子体浸没离子注入，掺杂剂沉积或表面材料增强的等离子体反应器包括真空室，晶片支撑基座或静电卡盘，其具有位于所述腔室内的晶片支撑表面下方的绝缘电极，耦合到绝缘体的夹持电压源 电极，耦合到静电卡盘的散热器，耦合到所述静电卡盘的RF偏置功率发生器，以及耦合到所述腔室并耦合到气体供应的工艺气体供应和气体入口端口。 工艺气体供应包含（a）含有要离子注入工件半导体材料中的掺杂剂物质的气体，（b）含有待沉积在工件的半导体材料表面上的掺杂物质的气体，或 （c）含有将离子注入到工件中的材料增强物质的气体。

公开(公告)号：US06939434B2

公开(公告)日：2005-09-06

申请号：US10164327

申请日：2002-06-05

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

摘要翻译： 描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。 所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。 反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流， 跨越所述处理区域。 磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

公开(公告)号：US20050191830A1

公开(公告)日：2005-09-01

申请号：US11046661

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01J37/32 ,  H01L21/425

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level; performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

摘要翻译： 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近; 通过将注入种类前体气体引入到腔室中并产生等离子体并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件沉积阈值温度的温度范围内来最小化沉积和最小化蚀刻来对工件进行等离子体浸没离子注入 工件蚀刻阈值温度。

公开(公告)号：US20050191827A1

公开(公告)日：2005-09-01

申请号：US11046562

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01J37/32 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

摘要翻译： 在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中， 在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。

公开(公告)号：US06679981B1

公开(公告)日：2004-01-20

申请号：US09569736

申请日：2000-05-11

申请人： Shaoher X. Pan ,  Hiroji Hanawa ,  John C. Forster ,  Fusen Chen

发明人： Shaoher X. Pan ,  Hiroji Hanawa ,  John C. Forster ,  Fusen Chen

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  H01J37/3408

摘要： A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through the processing space. A tube has its two ends connected to the vacuum chamber on confronting sides of the processing space. An RF coil powered by an RF power supply is positioned adjacent to the tube outside of the chamber and aligned to produce an RF magnetic field around the toroidal circumference of the tube such that an electric field is induced along the tube axis. Thereby, a plasma is generated in the tube in a loop circling through the processing space.

摘要翻译： 一种等离子体反应室，特别是直流磁控溅射反应器，其中等离子体的等离子体密度和离子化分数由通过处理空间的等离子体感应回路增加。 管子的两端连接到处理空间相对侧的真空室。 由RF电源供电的RF线圈定位成与腔室外部的管相邻，并对齐以在管的环形圆周周围产生RF磁场，使得沿着管轴引起电场。 由此，在管中产生等离子体，环路通过处理空间。

公开(公告)号：US06551446B1

公开(公告)日：2003-04-22

申请号：US09637174

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

发明人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC分类号： C23C1600

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.

摘要翻译： 用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室， 室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。 气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。 增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。 适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。