公开(公告)号：US5221638A

公开(公告)日：1993-06-22

申请号：US900440

申请日：1992-06-18

申请人： Koji Ohtsuka ,  Noriyoshi Ohmuro ,  Gen Koreeda

发明人： Koji Ohtsuka ,  Noriyoshi Ohmuro ,  Gen Koreeda

IPC分类号： H01L21/285 ,  H01L21/329 ,  H01L29/47

CPC分类号： H01L29/66212 ,  H01L21/28537 ,  H01L21/28581 ,  H01L29/475 ,  Y10S148/14 ,  Y10S438/935

摘要： According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height .phi.B which may stably be adjusted in a wide range. A Schottky barrier is formed by combination of an electrode layer, a Ti thin layer and Al layer. The Ti thin oxide layer between the Ti thin and Al layers may prevent variation of barrier height .phi.B during heat treatment. By controlling vacuum.

摘要翻译： 根据本发明，提供了一种可以在较宽范围内稳定地调节的势垒高度phi B的变化较小的肖特基势垒半导体器件的制造方法。 通过电极层，Ti薄层和Al层的组合形成肖特基势垒。 Ti薄层和Al层之间的Ti薄氧化物层可以防止在热处理期间势垒高度phi B的变化。 通过控制真空。

公开(公告)号：US20080015076A1

公开(公告)日：2008-01-17

申请号：US11823700

申请日：2007-06-27

申请人： Masaaki Fusegi ,  Koji Ohtsuka

发明人： Masaaki Fusegi ,  Koji Ohtsuka

IPC分类号： F16H48/02 ,  F16H48/20 ,  F16H57/02

CPC分类号： F16H48/30 ,  F16H48/08 ,  F16H48/24 ,  F16H48/34 ,  F16H48/40 ,  F16H2048/204 ,  F16H2048/346

摘要： A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.

摘要翻译： 公开了一种用于沿着轴将轴的驱动力差分地分配的差动装置。 所述差速装置具有能够围绕所述轴线旋转的壳体，所述壳体包括构造成接收所述驱动力的凸缘和垂直于所述轴线的所述壳体的轴; 由壳体的外周边缘的周边限定的开口，以允许其进入壳体，其横向的轴线从轴的中心向与该凸缘相反的方向偏离轴线; 以及差速齿轮组，其容纳在壳体中并且驱动地联接到壳体，差速齿轮组包括可围绕轴旋转的输入齿轮，并输出与输入齿轮组合的齿轮，以将驱动力差分地分配到输出齿轮，输出齿轮 被驱动地联接到轴。

公开(公告)号：US07176480B2

公开(公告)日：2007-02-13

申请号：US11122620

申请日：2005-05-05

申请人： Koji Ohtsuka ,  Junji Sato ,  Tetsuji Moku ,  Yoshitaka Tanaka ,  Mikio Tajima

发明人： Koji Ohtsuka ,  Junji Sato ,  Tetsuji Moku ,  Yoshitaka Tanaka ,  Mikio Tajima

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/06

摘要： A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.

摘要翻译： 发光二极管具有低电阻率硅衬底，其上层叠有缓冲层，n型下约束层，多量子阱构造的有源层和p型上约束层。 有源层由InGaN的势垒子层，AlGaInN的第一互补子层，InGaN的阱子层和AlGaInN的第二互补子层的循环变化构成。 活性亚层的所述成分的比例都被指定。 第一和第二互补子层防止铟从相邻子层的蒸发或扩散。

公开(公告)号：US06462531B1

公开(公告)日：2002-10-08

申请号：US09713996

申请日：2000-11-16

申请人： Koji Ohtsuka

发明人： Koji Ohtsuka

IPC分类号： G01R3300

CPC分类号： H01L43/065 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A current detector having a Hall-effect device formed in a semiconductor substrate for giving an output voltage proportional to the magnitude of an electric current. The detector has a first and a second current path terminal for the flow of the current to be detected. The two current path terminals are interconnected via two current paths having resistance values such that the current is divided at a prescribed ratio into two fractions on flowing into the current paths. While one current path directly interconnects the two terminals, the other path includes a conductor layer formed on the semiconductor substrate via an insulating layer so as to extend around the Hall-effect device. The magnitude of the complete current is detectable by the Hall-effect device from the current fraction flowing through the conductor layer. All but the terminals of the current detector is encapsulated to reduce a temperature difference between the two current paths to a minimum.

摘要翻译： 一种电流检测器，具有形成在半导体衬底中的霍尔效应器件，用于给出与电流大小成比例的输出电压。 检测器具有用于待检测电流的流动的第一和第二电流路径端子。 两个电流通路端子通过具有电阻值的两个电流路径相互连接，使得电流在流入电流路径时以规定比例分成两部分。 虽然一个电流路径直接互连两个端子，但是另一路径包括通过绝缘层形成在半导体衬底上的导体层，以便围绕霍尔效应器件延伸。 通过霍尔效应器件从流过导体层的电流分数可以检测到完整电流的大小。 除了当前检测器的端子之外，所有端子都被封装，以将两个电流路径之间的温差降至最低。

公开(公告)号：US06424018B1

公开(公告)日：2002-07-23

申请号：US09555361

申请日：2000-05-30

申请人： Koji Ohtsuka

发明人： Koji Ohtsuka

IPC分类号： H01L4300

CPC分类号： H01L27/22 ,  G01R15/202 ,  G01R33/07

摘要： A first and a second Hall element (2 and 3) for current detection, in addition to a semiconductor element (4) for an electric circuit, are provided on a semiconductor substrate. A conductor layer (5), through which flows the current of the semiconductor element (4), is formed on an insulating film (20) on the surface of the semiconductor substrate. The conductor layer (5) is arranged along the first and second Hall elements (2 and 3) for higher sensitivity. The magnetic flux created by the flow of a current through the conductor layer (5) is applied to the first and second Hall elements (2 and 3). The first and second Hall voltages obtained from the first and second Hall elements (2 and 3) are totaled for higher sensitivity.

摘要翻译： 除了用于电路的半导体元件（4）之外，用于电流检测的第一和第二霍尔元件（2和3）设置在半导体衬底上。 在半导体衬底的表面上的绝缘膜（20）上形成有流过半导体元件（4）的电流的导体层（5）。 导体层（5）沿着第一和第二霍尔元件（2和3）布置以获得更高的灵敏度。 通过导体层（5）的电流流动产生的磁通量被施加到第一和第二霍尔元件（2和3）。 从第一和第二霍尔元件（2和3）获得的第一和第二霍尔电压被合计以获得更高的灵敏度。

公开(公告)号：US5148240A

公开(公告)日：1992-09-15

申请号：US628374

申请日：1990-12-14

申请人： Koji Ohtsuka ,  Yoshiro Kutsuzawa ,  Kimio Ogata ,  Hideyuki Ichinosawa

发明人： Koji Ohtsuka ,  Yoshiro Kutsuzawa ,  Kimio Ogata ,  Hideyuki Ichinosawa

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  Y10S148/14 ,  Y10S438/934

摘要： A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.