公开(公告)号：US07780565B2

公开(公告)日：2010-08-24

申请号：US11823700

申请日：2007-06-27

Applicant: Masaaki Fusegi ,  Koji Ohtsuka

Inventor： Masaaki Fusegi ,  Koji Ohtsuka

IPC: F16H48/06

CPC classification number: F16H48/30 ,  F16H48/08 ,  F16H48/24 ,  F16H48/34 ,  F16H48/40 ,  F16H2048/204 ,  F16H2048/346

Abstract: A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.

Abstract translation: 公开了一种用于沿着轴将轴的驱动力差分地分配的差动装置。 所述差速装置具有能够围绕所述轴线旋转的壳体，所述壳体包括被配置为接收所述驱动力的凸缘和垂直于所述轴线的所述壳体的轴; 由壳体的外周边缘的周边限定的开口，以允许其进入壳体，其横向的轴线从轴的中心向与轴向方向相反的方向偏离; 以及差速齿轮组，其容纳在壳体中并且驱动地联接到壳体，差速齿轮组包括可围绕轴旋转的输入齿轮，并输出与输入齿轮组合的齿轮，以将驱动力差分地分配到输出齿轮，输出齿轮 被驱动地联接到轴。

公开(公告)号：US20060175621A1

公开(公告)日：2006-08-10

申请号：US10496888

申请日：2002-12-27

Applicant: Koji Ohtsuka ,  Hitoshi Murofushi

Inventor： Koji Ohtsuka ,  Hitoshi Murofushi

IPC: H01L21/00 ,  H01L33/00 ,  H01L29/18

CPC classification number: H01L27/156 ,  H01L33/10

Abstract: A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from each other and having a wider band gap than the substrate (3), and phosphors (15a, 15b, 15c, . . . ) converting wavelengths of light from the light-emitting-element-layers (10a, 10b, 10c, . . . ) into other wavelengths.

Abstract translation: 半导体发光装置包括基板（3），形成在基板（3）上的半导体材料的多个发光元件层（10a，10b，10b等），以便成为 彼此隔离并且具有比衬底（3）更宽的带隙，以及将来自发光元件层（10a，15b）的光的波长转换的磷光体（15a，15b，15c ...） 10 b，10 c，...）到其他波长。

公开(公告)号：US06812687B1

公开(公告)日：2004-11-02

申请号：US09724979

申请日：2000-11-28

Applicant: Koji Ohtsuka

Inventor： Koji Ohtsuka

IPC: G01R3300

CPC classification number: H01L43/065 ,  G01R15/202

Abstract: A current detector has a semiconductor Hall-effect device having a primary semiconductor region where a Hall voltage develops in proportion to the magnitude of the current to be detected. A conductor strip for carrying this current is formed on the semiconductor substrate via a plurality of insulating layers so as to extend around the primary semiconductor region of the Hall-effect device. In order to protect the Hall-effect device from inductive noise, a shielding layer of molybdenum or the like is interposed between the semiconductor substrate and the conductor strip, preferably by being sandwiched between the insulating layers.

Abstract translation: 电流检测器具有半导体霍尔效应器件，其具有与要检测的电流的大小成比例地形成霍尔电压的初级半导体区域。 通过多个绝缘层在半导体衬底上形成用于承载该电流的导体条，以便围绕霍尔效应器件的初级半导体区域延伸。 为了保护霍尔效应器件免受电感噪声的影响，优选通过夹在绝缘层之间，在半导体衬底和导体条之间插入有钼或类似屏蔽层。

公开(公告)号：US20080015076A1

公开(公告)日：2008-01-17

申请号：US11823700

申请日：2007-06-27

Applicant: Masaaki Fusegi ,  Koji Ohtsuka

Inventor： Masaaki Fusegi ,  Koji Ohtsuka

IPC: F16H48/02 ,  F16H48/20 ,  F16H57/02

CPC classification number: F16H48/30 ,  F16H48/08 ,  F16H48/24 ,  F16H48/34 ,  F16H48/40 ,  F16H2048/204 ,  F16H2048/346

Abstract: A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.

Abstract translation: 公开了一种用于沿着轴将轴的驱动力差分地分配的差动装置。 所述差速装置具有能够围绕所述轴线旋转的壳体，所述壳体包括构造成接收所述驱动力的凸缘和垂直于所述轴线的所述壳体的轴; 由壳体的外周边缘的周边限定的开口，以允许其进入壳体，其横向的轴线从轴的中心向与该凸缘相反的方向偏离轴线; 以及差速齿轮组，其容纳在壳体中并且驱动地联接到壳体，差速齿轮组包括可围绕轴旋转的输入齿轮，并输出与输入齿轮组合的齿轮，以将驱动力差分地分配到输出齿轮，输出齿轮 被驱动地联接到轴。

公开(公告)号：US07176480B2

公开(公告)日：2007-02-13

申请号：US11122620

申请日：2005-05-05

Applicant: Koji Ohtsuka ,  Junji Sato ,  Tetsuji Moku ,  Yoshitaka Tanaka ,  Mikio Tajima

Inventor： Koji Ohtsuka ,  Junji Sato ,  Tetsuji Moku ,  Yoshitaka Tanaka ,  Mikio Tajima

IPC: H01L29/06

CPC classification number: H01L33/007 ,  H01L33/06

Abstract: A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.

Abstract translation: 发光二极管具有低电阻率硅衬底，其上层叠有缓冲层，n型下约束层，多量子阱构造的有源层和p型上约束层。 有源层由InGaN的势垒子层，AlGaInN的第一互补子层，InGaN的阱子层和AlGaInN的第二互补子层的循环变化构成。 活性亚层的所述成分的比例都被指定。 第一和第二互补子层防止铟从相邻子层的蒸发或扩散。

公开(公告)号：US06841989B2

公开(公告)日：2005-01-11

申请号：US10166203

申请日：2002-06-10

Applicant: Hirokazu Goto ,  Akira Hasegawa ,  Koji Ohtsuka ,  Takashi Kato

Inventor： Hirokazu Goto ,  Akira Hasegawa ,  Koji Ohtsuka ,  Takashi Kato

IPC: G01R15/20 ,  G01R33/07

CPC classification number: G01R33/07 ,  G01R15/202

Abstract: A current detector comprising a current-path conductor assembly and a Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic conductor holder molded in one piece therewith. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate, a set of leads electrically connected to the Hall generator, and a plastic encapsulation enveloping the Hall generator and parts of the leads. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly. The conductor holder and the encapsulation are shaped in interfitting relationship to each other, so that when they are united, the Hall generator is positioned to generate a Hall voltage in response to a magnetic field due to the current flowing through the current-path conductor.

Abstract translation: 一种电流检测器，包括电流通道导体组件和霍尔发生器组件。 电流通道导体组件包括一片金属电流通道导体和一体成型的塑料导体支架。 霍尔发生器组件包括安装到金属制安装板的半导体芯片形式的霍尔发生器，电连接到霍尔发生器的一组引线以及包围霍尔发生器和导线的部分的塑料封装。 霍尔发生器组件和电流通道导体组件通过将霍尔发生器组件的封装和电流通道导体组件的导体保持器结合在一起而组合。 导体保持器和封装形状彼此相互关联，使得当它们被联合时，霍尔发生器被定位成响应于流过电流通道导体的电流而响应于磁场而产生霍尔电压。

公开(公告)号：US06759841B2

公开(公告)日：2004-07-06

申请号：US10172200

申请日：2002-06-14

Applicant: Hirokazu Goto ,  Koji Ohtsuka ,  Takashi Kato ,  Hiromichi Kumakura

Inventor： Hirokazu Goto ,  Koji Ohtsuka ,  Takashi Kato ,  Hiromichi Kumakura

IPC: G01R1520

CPC classification number: G01R15/202

Abstract: A current detector comprising a Hall generator assembly and a current-path conductor assembly. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate via a sheet of magnetic material such as Permalloy. A plastic encapsulation envelops at least parts of all the components of the Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic holder molded in one piece therewith. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly into a unitary casing for the current detector. A covering of Permalloy or the like envelopes the casing.

Abstract translation: 一种电流检测器，包括霍尔发生器组件和电流通道导体组件。 霍尔发生器组件包括通过诸如坡莫合金的磁性材料片安装到金属制安装板的半导体芯片形式的霍尔发生器。 塑料封装包括霍尔发生器组件的所有部件的至少一部分。 电流通道导体组件包括一片金属片电流通道导体和一体成型的塑料保持架。 霍尔发生器组件和电流通道导体组件通过将霍尔发生器组件的封装和电流通道导体组件的导体保持器结合在一起用于电流检测器的一体式壳体来组合。 坡莫合金或类似物的覆盖物封套。

公开(公告)号：US06462531B1

公开(公告)日：2002-10-08

申请号：US09713996

申请日：2000-11-16

Applicant: Koji Ohtsuka

Inventor： Koji Ohtsuka

IPC: G01R3300

CPC classification number: H01L43/065 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A current detector having a Hall-effect device formed in a semiconductor substrate for giving an output voltage proportional to the magnitude of an electric current. The detector has a first and a second current path terminal for the flow of the current to be detected. The two current path terminals are interconnected via two current paths having resistance values such that the current is divided at a prescribed ratio into two fractions on flowing into the current paths. While one current path directly interconnects the two terminals, the other path includes a conductor layer formed on the semiconductor substrate via an insulating layer so as to extend around the Hall-effect device. The magnitude of the complete current is detectable by the Hall-effect device from the current fraction flowing through the conductor layer. All but the terminals of the current detector is encapsulated to reduce a temperature difference between the two current paths to a minimum.

Abstract translation: 一种电流检测器，具有形成在半导体衬底中的霍尔效应器件，用于给出与电流大小成比例的输出电压。 检测器具有用于待检测电流的流动的第一和第二电流路径端子。 两个电流通路端子通过具有电阻值的两个电流路径相互连接，使得电流在流入电流路径时以规定比例分成两部分。 虽然一个电流路径直接互连两个端子，但是另一路径包括通过绝缘层形成在半导体衬底上的导体层，以便围绕霍尔效应器件延伸。 通过霍尔效应器件从流过导体层的电流分数可以检测到完整电流的大小。 除了当前检测器的端子之外，所有端子都被封装，以将两个电流路径之间的温差降至最低。

公开(公告)号：US06424018B1

公开(公告)日：2002-07-23

申请号：US09555361

申请日：2000-05-30

Applicant: Koji Ohtsuka

Inventor： Koji Ohtsuka

IPC: H01L4300

CPC classification number: H01L27/22 ,  G01R15/202 ,  G01R33/07

Abstract: A first and a second Hall element (2 and 3) for current detection, in addition to a semiconductor element (4) for an electric circuit, are provided on a semiconductor substrate. A conductor layer (5), through which flows the current of the semiconductor element (4), is formed on an insulating film (20) on the surface of the semiconductor substrate. The conductor layer (5) is arranged along the first and second Hall elements (2 and 3) for higher sensitivity. The magnetic flux created by the flow of a current through the conductor layer (5) is applied to the first and second Hall elements (2 and 3). The first and second Hall voltages obtained from the first and second Hall elements (2 and 3) are totaled for higher sensitivity.

Abstract translation: 除了用于电路的半导体元件（4）之外，用于电流检测的第一和第二霍尔元件（2和3）设置在半导体衬底上。 在半导体衬底的表面上的绝缘膜（20）上形成有流过半导体元件（4）的电流的导体层（5）。 导体层（5）沿着第一和第二霍尔元件（2和3）布置以获得更高的灵敏度。 通过导体层（5）的电流流动产生的磁通量被施加到第一和第二霍尔元件（2和3）。 从第一和第二霍尔元件（2和3）获得的第一和第二霍尔电压被合计以获得更高的灵敏度。

公开(公告)号：US5148240A

公开(公告)日：1992-09-15

申请号：US628374

申请日：1990-12-14

Applicant: Koji Ohtsuka ,  Yoshiro Kutsuzawa ,  Kimio Ogata ,  Hideyuki Ichinosawa

Inventor： Koji Ohtsuka ,  Yoshiro Kutsuzawa ,  Kimio Ogata ,  Hideyuki Ichinosawa

IPC: H01L29/872

CPC classification number: H01L29/872 ,  Y10S148/14 ,  Y10S438/934

Abstract: A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.