公开(公告)号：US07851777B2

公开(公告)日：2010-12-14

申请号：US12271837

申请日：2008-11-14

申请人： Nobutoshi Arai ,  Hiroshi Iwata ,  Seizo Kakimoto

发明人： Nobutoshi Arai ,  Hiroshi Iwata ,  Seizo Kakimoto

IPC分类号： H01L29/02

CPC分类号： H01L29/8615 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/10 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  Y10S438/90

摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

摘要翻译： 电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻 在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。 第一物质对第二物质产生电阻。 利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。 另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

公开(公告)号：US20090085025A1

公开(公告)日：2009-04-02

申请号：US12271837

申请日：2008-11-14

申请人： Nobutoshi ARAI ,  Hiroshi Iwata ,  Seizo Kakimoto

发明人： Nobutoshi ARAI ,  Hiroshi Iwata ,  Seizo Kakimoto

IPC分类号： H01L45/00 ,  H01L21/265

CPC分类号： H01L29/8615 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/10 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608 ,  Y10S438/90

摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

摘要翻译： 电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻 在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。 第一物质对第二物质产生电阻。 利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。 另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

公开(公告)号：US06787410B2

公开(公告)日：2004-09-07

申请号：US10322663

申请日：2002-12-19

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Seizo Kakimoto

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Seizo Kakimoto

IPC分类号： H01L218238

CPC分类号： H01L21/76229 ,  H01L21/823807 ,  H01L29/783

摘要： A semiconductor device with dynamic threshold transistors includes a complex element isolation region composed of a shallow element isolation region made of shallow trench isolation and deep element isolation regions provided on both sides of the shallow element isolation region. Since the shallow element isolation region is made of the shallow trench isolation, Bird's beak in the shallow element isolation region is small. This prevents off leakage failure due to stress caused by the bird's beak. The deep element isolation region has an approximately constant width which allows the complex element isolation region to be wide.

摘要翻译： 具有动态阈值晶体管的半导体器件包括由浅沟槽隔离构成的浅元件隔离区域和设置在浅元件隔离区域两侧的深元件隔离区域构成的复合元件隔离区域。 由于浅元件隔离区域由浅沟槽隔离构成，浅元件隔离区域中的鸟喙小。 这可以防止由于鸟嘴引起的应力引起的泄漏故障。 深元件隔离区域具有近似恒定的宽度，其允许复杂元件隔离区域宽。

公开(公告)号：US07711012B2

公开(公告)日：2010-05-04

申请号：US10467808

申请日：2002-02-13

申请人： Hiroshi Iwata ,  Tomohisa Okuno ,  Akihide Shibata ,  Seizo Kakimoto

发明人： Hiroshi Iwata ,  Tomohisa Okuno ,  Akihide Shibata ,  Seizo Kakimoto

IPC分类号： H04J99/00

CPC分类号： H01L27/118 ,  H01L27/0207 ,  H01L27/11898

摘要： The yield of a semiconductor device is improved which has a large-scale logic circuit or which has both a logic circuit and a memory. A basic circuit block is provided with an input/output circuit. A transmission line and a branch line connect the input/output circuits so that information can be exchanged through the input/output circuits between one basic circuit block and another basic circuit block. The memory in each basic circuit block or in each input/output circuit can be programmed from the outside to designate the destination of a signal. By thus changing the program in the memory, the transmission destination of a signal can be changed to give various functions efficiently with a limited circuit scale. Moreover, if a basic circuit block fails another basic circuit block substitutes for it to improve the yield drastically.

摘要翻译： 改善了具有大规模逻辑电路或具有逻辑电路和存储器的半导体器件的产量。 基本电路块设置有输入/输出电路。 传输线和分支线连接输入/输出电路，使得可以通过一个基本电路块和另一个基本电路块之间的输入/输出电路来交换信息。 每个基本电路块或每个输入/输出电路中的存储器可以从外部编程以指定信号的目的地。 通过这样改变存储器中的程序，可以改变信号的发送目的地，以有限的电路规模有效地提供各种功能。 此外，如果基本电路块失败，另一个基本电路块代替它可以显着提高产量。

公开(公告)号：US07352024B2

公开(公告)日：2008-04-01

申请号：US10468722

申请日：2002-02-21

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Seizo Kakimoto

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Seizo Kakimoto

IPC分类号： H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11524 ,  B82Y10/00 ,  G11C16/0416 ,  G11C2216/06 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11568

摘要： There is provided a semiconductor storage device capable of high integration. On a top surface of a semiconductor substrate, a plurality of device isolation regions (16) each extending and meandering in a lateral direction are formed so as to be arrayed with respect to a longitudinal direction, by which active regions are defined between neighboring ones of the device isolation regions (16), respectively. Dopant diffusion regions (source or drain) are formed at individual turnover portions (corresponding to contacts (14), (15)), respectively, of the meanders within the active regions. A plurality of word lines (11) extending straight in the longitudinal direction run on the channel regions within the active regions via a film having memory function, respectively. A first bit line (12) extending straight in the lateral direction runs on the dopant diffusion region (corresponding to contact (14)) provided at a crest-side turnover portion. A second bit line (15) extending straight in the lateral direction runs on the dopant diffusion region (corresponding to contact (15)) provided at a trough-side turnover portion.

摘要翻译： 提供能够高集成度的半导体存储装置。 在半导体衬底的顶表面上形成有沿纵向方向延伸和曲折的多个器件隔离区（16），以便相对于纵向方向排列有活性区域 设备隔离区域（16）。 掺杂剂扩散区域（源极或漏极）分别形成在活性区域内的蜿蜒的各自的周转部分（对应于触点（14），（15））。 在纵向方向上直线延伸的多个字线（11）分别经由具有记忆功能的胶片在有源区域内的沟道区域上延伸。 在横向方向上直线延伸的第一位线（12）在设置在峰顶侧翻转部分的掺杂剂扩散区域（对应于触点（14））上延伸。 在横向方向上直线延伸的第二位线（15）在设置在槽侧翻转部分的掺杂剂扩散区域（对应于触点（15））上延伸。

公开(公告)号：US06509615B2

公开(公告)日：2003-01-21

申请号：US10067791

申请日：2002-02-08

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Seizo Kakimoto

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Seizo Kakimoto

IPC分类号： H01L31119

CPC分类号： H01L21/76229 ,  H01L21/823807 ,  H01L29/783

摘要： A semiconductor device with dynamic threshold transistors includes a complex element isolation region composed of a shallow element isolation region made of shallow trench isolation and deep element isolation regions provided on both sides of the shallow element isolation region. Since the shallow element isolation region is made of the shallow trench isolation, bird's beak in the shallow element isolation region is small. This prevents off leakage failure due to stress caused by the bird's beak. The deep element isolation region has an approximately constant width which allows the complex element isolation region to be wide.

摘要翻译： 具有动态阈值晶体管的半导体器件包括由浅沟槽隔离构成的浅元件隔离区域和设置在浅元件隔离区域两侧的深元件隔离区域构成的复合元件隔离区域。 由于浅元件隔离区域由浅沟槽隔离构成，浅元件隔离区域中的鸟喙小。 这可以防止由于鸟嘴引起的应力引起的泄漏故障。 深元件隔离区域具有近似恒定的宽度，其允许复杂元件隔离区域宽。

公开(公告)号：US08698193B2

公开(公告)日：2014-04-15

申请号：US12510470

申请日：2009-07-28

申请人： Nobutoshi Arai ,  Masatomi Harada ,  Kouichirou Adachi ,  Hiroshi Iwata

发明人： Nobutoshi Arai ,  Masatomi Harada ,  Kouichirou Adachi ,  Hiroshi Iwata

IPC分类号： H01L29/80

CPC分类号： H01L21/26506

摘要： The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

摘要翻译： 本发明的发光器件包括第一电极，第二电极和形成在第一电极和第二电极之间并且包含锗发光体的载体，其中锗发光体包含锗氧化物，其中至少部分锗 当向第一电极和第二电极施加电位差时，氧化物具有缺氧并且在250至350nm的范围内和/或350至500nm的范围内都具有发射的波长峰值。

公开(公告)号：US07312499B2

公开(公告)日：2007-12-25

申请号：US11414226

申请日：2006-05-01

申请人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

发明人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  G11C16/0491 ,  H01L21/28282 ,  H01L21/28291 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/6656 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

摘要翻译： 半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。 该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。 该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。 该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。 涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。 因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。

公开(公告)号：US07129539B2

公开(公告)日：2006-10-31

申请号：US10844474

申请日：2004-05-13

申请人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

发明人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  G11C16/0491 ,  H01L21/28282 ,  H01L21/28291 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/6656 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

公开(公告)号：US20060208312A1

公开(公告)日：2006-09-21

申请号：US11414226

申请日：2006-05-01

申请人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

发明人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  G11C16/0491 ,  H01L21/28282 ,  H01L21/28291 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/6656 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

摘要翻译： 半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。 该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。 该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。 该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。 涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。 因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。