公开(公告)号：US5426412A

公开(公告)日：1995-06-20

申请号：US141336

申请日：1993-10-26

申请人： Shigeaki Tomonari ,  Jun Sakai ,  Kouichi Aizawa ,  Keizi Kakite ,  Takayoshi Awai ,  Takuro Nakamura ,  Takuro Ishida ,  Tsutomu Ichihara ,  Hitoshi Yoshida ,  Shigenari Takami ,  Sadayuki Sumi

发明人： Shigeaki Tomonari ,  Jun Sakai ,  Kouichi Aizawa ,  Keizi Kakite ,  Takayoshi Awai ,  Takuro Nakamura ,  Takuro Ishida ,  Tsutomu Ichihara ,  Hitoshi Yoshida ,  Shigenari Takami ,  Sadayuki Sumi

IPC分类号： G01J5/10 ,  G01J5/20 ,  H01C7/02 ,  H01L31/08

CPC分类号： G01J5/04 ,  G01J5/045 ,  G01J5/20 ,  H01C7/021 ,  G01J2005/103

摘要： An infrared detecting arrangement includes an infrared detecting element having a heat insulating film and an infrared detector which are disposed between an interior space of a hermetically sealed casing for the element and a cavity formed within a substrate of the element and communicating through a ventilator with the interior space.

摘要翻译： 红外检测装置包括具有隔热膜和红外检测器的红外检测元件，该红外检测元件设置在用于该元件的气密密封外壳的内部空间和形成在元件的基板内的空腔之间，并且通过通气机与 内部空间。

公开(公告)号：US07898160B2

公开(公告)日：2011-03-01

申请号：US10572748

申请日：2004-11-25

申请人： Koichi Aizawa ,  Tsutomu Ichihara ,  Takuya Komoda ,  Jyunji Ikeda ,  Toru Baba

发明人： Koichi Aizawa ,  Tsutomu Ichihara ,  Takuya Komoda ,  Jyunji Ikeda ,  Toru Baba

IPC分类号： H01J9/02

CPC分类号： G21K5/04 ,  B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J37/073 ,  H01J37/30

摘要： Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

摘要翻译： 提供了用电子修饰物体的装置和方法，通过该装置和方法，即使具有相对较宽的待处理表面积，物体也可以在基本上等于大气压的压力下用电子均匀有效地修改。 该方法使用具有根据隧道效应从平面电子发射部分发射电子的能力的冷阴极电子发射体，并且优选地包括一对电极，以及包括设置在电极之间的纳米晶硅的强场漂移层。 该物体通过在电极之间施加电压而暴露于从平面电子发射部分发射的电子。

公开(公告)号：US07378656B2

公开(公告)日：2008-05-27

申请号：US10576951

申请日：2004-10-27

申请人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

发明人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

IPC分类号： G01J5/02

CPC分类号： H01L37/00 ,  H05B3/009 ,  H05B3/265 ,  H05B2203/032

摘要： An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of pads 4 for energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

摘要翻译： 红外线辐射元件在半导体衬底的厚度方向的表面上形成有比半导体衬底具有足够小的热导率的隔热层。 在隔热层上形成有与层（平面）形成并且具有比隔热层更大的导热性和更大导电性的加热层。 在加热层上形成一对用于通电的焊盘4。 半导体衬底由硅衬底制成。 绝热层和加热层由具有不同孔隙率的多孔硅层形成，并且加热层具有比隔热层更小的孔隙率。 通过使用红外辐射元件作为气体传感器的红外辐射源，可以延长红外辐射源的寿命。

公开(公告)号：US20070090293A1

公开(公告)日：2007-04-26

申请号：US10576951

申请日：2004-10-27

申请人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

发明人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

IPC分类号： G01J5/02

CPC分类号： H01L37/00 ,  H05B3/009 ,  H05B3/265 ,  H05B2203/032

摘要： In the infrared radiation element (A), a heat insulating layer 2, which has sufficiently smaller thermal conductivity than a semiconductor substrate 1, is formed on a surface in the thickness direction of the semiconductor substrate 1, and a heating layer 3, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer 2, is formed on the heat insulating layer 2, and a pair of pads 4 for energization are formed on the heating layer 3. The semiconductor substrate 1 is made of a silicon substrate. The heat insulating layer 2 and the heating layer 3 are formed by porous silicon layers having different porosities from each other, and the heating layer 3 has smaller porosity than the heat insulating layer 2. By using the infrared radiation element (A) as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

摘要翻译： 在红外线辐射元件（A）中，在半导体衬底1的厚度方向的表面上形成具有比半导体衬底1小的热导率的隔热层2和加热层3， 在绝热层2上形成层叠（平面）形式并且具有比绝热层2更大的导热性和更大的导电性，并且在加热层3上形成一对用于通电的焊盘4。 半导体衬底1由硅衬底制成。 绝热层2和加热层3由具有不同孔隙率的多孔硅层形成，并且加热层3具有比隔热层2更小的孔隙率。 通过使用红外线辐射元件（A）作为气体传感器的红外辐射源，可以延长红外辐射源的寿命。

公开(公告)号：US20060049393A1

公开(公告)日：2006-03-09

申请号：US10538738

申请日：2003-12-26

申请人： Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Toru Baba

发明人： Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Toru Baba

IPC分类号： H01L29/06

CPC分类号： H01J1/3042 ,  H01J31/123

摘要： A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

摘要翻译： 场发射型电子源具有形成在由玻璃基板构成的绝缘基板（11）的一个表面（前表面）侧的多个电子源元件（10a）。 每个电子源元件（10a）包括下电极（12），由形成在下电极（12）上的非晶硅层组成的缓冲层（14），形成在缓冲层上的多晶硅层 （14），形成在多晶硅层（3）上的强场漂移层（6）和形成在强场漂移层（6）上的表面电极（7）。 场致发射型电子源可以实现电子发射特性的平滑变化。