公开(公告)号：US07378656B2

公开(公告)日：2008-05-27

申请号：US10576951

申请日：2004-10-27

申请人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

发明人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

IPC分类号： G01J5/02

CPC分类号： H01L37/00 ,  H05B3/009 ,  H05B3/265 ,  H05B2203/032

摘要： An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of pads 4 for energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

摘要翻译： 红外线辐射元件在半导体衬底的厚度方向的表面上形成有比半导体衬底具有足够小的热导率的隔热层。 在隔热层上形成有与层（平面）形成并且具有比隔热层更大的导热性和更大导电性的加热层。 在加热层上形成一对用于通电的焊盘4。 半导体衬底由硅衬底制成。 绝热层和加热层由具有不同孔隙率的多孔硅层形成，并且加热层具有比隔热层更小的孔隙率。 通过使用红外辐射元件作为气体传感器的红外辐射源，可以延长红外辐射源的寿命。

公开(公告)号：US20070090293A1

公开(公告)日：2007-04-26

申请号：US10576951

申请日：2004-10-27

申请人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

发明人： Tsutomu Ichihara ,  Chousei Hamada ,  Koshi Akedo ,  Hiroaki Kitamura ,  Hiroshi Fukshima ,  Takuya Komoda ,  Takashi Hatai

IPC分类号： G01J5/02

CPC分类号： H01L37/00 ,  H05B3/009 ,  H05B3/265 ,  H05B2203/032

摘要： In the infrared radiation element (A), a heat insulating layer 2, which has sufficiently smaller thermal conductivity than a semiconductor substrate 1, is formed on a surface in the thickness direction of the semiconductor substrate 1, and a heating layer 3, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer 2, is formed on the heat insulating layer 2, and a pair of pads 4 for energization are formed on the heating layer 3. The semiconductor substrate 1 is made of a silicon substrate. The heat insulating layer 2 and the heating layer 3 are formed by porous silicon layers having different porosities from each other, and the heating layer 3 has smaller porosity than the heat insulating layer 2. By using the infrared radiation element (A) as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

摘要翻译： 在红外线辐射元件（A）中，在半导体衬底1的厚度方向的表面上形成具有比半导体衬底1小的热导率的隔热层2和加热层3， 在绝热层2上形成层叠（平面）形式并且具有比绝热层2更大的导热性和更大的导电性，并且在加热层3上形成一对用于通电的焊盘4。 半导体衬底1由硅衬底制成。 绝热层2和加热层3由具有不同孔隙率的多孔硅层形成，并且加热层3具有比隔热层2更小的孔隙率。 通过使用红外线辐射元件（A）作为气体传感器的红外辐射源，可以延长红外辐射源的寿命。

公开(公告)号：US06753196B2

公开(公告)日：2004-06-22

申请号：US10178409

申请日：2002-06-25

申请人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba

发明人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba

IPC分类号： H01L2100

CPC分类号： B82Y10/00 ,  H01J9/025

摘要： An electron source 10 has an n-type silicon substrate 1, a drift layer 6 formed on one surface of the substrate 1, and a surface electrode 7 formed on the drift layer 6. A voltage is applied so that the surface electrode 7 becomes positive in polarity relevant to the substrate 1, whereby electrons injected from the substrate 1 into the drift layer 6 drift within the drift layer 6, and are emitted through the surface electrode 7. In a process for manufacturing this electron source 10, when the drift layer 6 is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.

摘要翻译： 电子源10具有n型硅衬底1，形成在衬底1的一个表面上的漂移层6和形成在漂移层6上的表面电极7.施加电压使得表面电极7变为正 与衬底1相关的极性，由此从衬底1注入漂移层6的电子在漂移层6内漂移，并通过表面电极7发射。在制造该电子源10的过程中，当漂移层 如图6所示，根据阳极氧化形成含有半导体纳米晶体的多孔半导体层。 然后，在每个半导体纳米晶体的表面上形成绝缘膜。 在发射基本上包含与半导体层相关的可见光区域中的波长的光的同时进行阳极氧化。

公开(公告)号：US06285118B1

公开(公告)日：2001-09-04

申请号：US09440166

申请日：1999-11-15

申请人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Nobuyoshi Koshida

发明人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Nobuyoshi Koshida

IPC分类号： H01J902

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/025

摘要： A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.

摘要翻译： 场发射型电子源10设置有n型硅衬底1，直接形成在n型硅衬底1上或在其间插入多晶硅层3的强场漂移层6和导电薄膜7 ，其是形成在强场漂移层6上的薄金膜。此外，在n型硅衬底1的背面上设置欧姆电极2.因此，从n型衬底1注入的电子 硅衬底1进入强场漂移层6，在强场漂移层6中向层的表面漂移，然后通过导电薄膜7向外发射。 通过使形成在n型硅衬底1上的多晶硅3通过阳极氧化多孔，并且使用稀硝酸等进一步氧化，形成强场漂移层6。

公开(公告)号：US06844664B2

公开(公告)日：2005-01-18

申请号：US10258601

申请日：2002-04-24

申请人： Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

发明人： Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

IPC分类号： H01J1/304 ,  H01J1/312 ,  H01J9/02 ,  H01J1/02

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

摘要： In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

摘要翻译： 在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。 在n型硅衬底（1）的背面设有欧姆电极（2）。 施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。 以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由 表面电极（7）。 强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上，并且各自具有使得发生电子隧道现象的程度的膜厚度。

公开(公告)号：US06794805B1

公开(公告)日：2004-09-21

申请号：US09382956

申请日：1999-08-25

申请人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Naomasa Oka ,  Nobuyoshi Koshida

发明人： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Naomasa Oka ,  Nobuyoshi Koshida

IPC分类号： H01J130

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/3125

摘要： An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.

摘要翻译： 场发射电子源的阵列和制备阵列的方法，其从场致发射电子源的表面电极的期望区域放电。 场发射电子源10包括p型硅衬底1的导电衬底; 在p型硅衬底的一个主表面上的扩散层条纹的n型区域8，形成在由氧化的多孔多晶硅制成的n型区域8上的强电场漂移层6，用于漂移电子注入 从n型区域8; 强场漂移层6之间的多晶硅层3; 薄导电薄膜条的表面电极7以与强场漂移层6和多晶硅层3的条纹交叉的方式形成。通过选择一对n型区域8和表面电极7 从而由于要被施加的表面电极7的组合和被施加的n型区域8而使从交叉点发射的电子能够从表面电极7的期望的区域排出电子。

公开(公告)号：US06784621B2

公开(公告)日：2004-08-31

申请号：US10281358

申请日：2002-10-28

申请人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Takashi Hatai ,  Yoshiyuki Takegawa ,  Toru Baba

发明人： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Takashi Hatai ,  Yoshiyuki Takegawa ,  Toru Baba

IPC分类号： H01J130

CPC分类号： G09G3/22 ,  B82Y10/00 ,  G09G2310/0254 ,  G09G2320/043 ,  H01J1/312

摘要： An electron source (10) has an electron source element (10a) including a lower electrode (12), a drift layer (6) and a surface electrode (7). The drift layer (6) is interposed between the lower electrode (12) and the surface electrode (7). When a certain voltage is applied between the surface electrode (7) and the lower electrode (12) such that the surface electrode (7) has a higher potential than that of the lower electrode (12), a resultingly induced electric field allows electrons to pass through the drift layer (6) and then the electrons are emitted through the surface electrode (7). When a forward-bias voltage is applied between the surface electrode (7) and the lower electrode (12), a reverse-bias voltage is applied after the forward-bias voltage has been applied to release out of the drift layer (6) an electron captured by a trap (9) in the drift layer (6).

摘要翻译： 电子源（10）具有包括下电极（12），漂移层（6）和表面电极（7）的电子源元件（10a）。 漂移层（6）介于下电极（12）和表面电极（7）之间。 当在表面电极（7）和下部电极（12）之间施加一定电压使得表面电极（7）的电位高于下部电极（12）的电位时，导致的电场使电子 通过漂移层（6），然后通过表面电极（7）发射电子。 当在表面电极（7）和下部电极（12）之间施加正向偏置电压时，在施加正向偏置电压以从漂移层（6）释放出之后施加反向偏置电压 由漂移层（6）中的阱（9）捕获的电子。

公开(公告)号：US06720717B2

公开(公告)日：2004-04-13

申请号：US10252800

申请日：2002-09-24

申请人： Takuya Komoda ,  Yoshiyuki Takegawa ,  Koichi Aizawa ,  Takashi Hatai ,  Tsutomu Ichihara ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Toru Baba

发明人： Takuya Komoda ,  Yoshiyuki Takegawa ,  Koichi Aizawa ,  Takashi Hatai ,  Tsutomu Ichihara ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Toru Baba

IPC分类号： H01L105

CPC分类号： H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/30446 ,  H01J2201/3125

摘要： A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

摘要翻译： 在由诸如玻璃或陶瓷基板的绝缘基板构成的基板（1）的一个主表面侧上形成下层电极（2）和由层状导电碳化物层构成的表面电极（7）。 在下电极（2）上形成非掺杂多晶硅层（3）。 在多晶硅层（3）上形成由氧化的多孔多晶硅构成的电子迁移层（6）。 电子转移层（6）由包括多晶硅的复合纳米晶体层和与多晶硅的晶界相邻的许多纳米晶体硅构成。 当在下电极（2）和表面电极（7）之间施加电压使得表面电极（7）具有较高电位时，电子从下电极（2）向表面电极（7）注入，并且 通过电子转移层（6）通过表面电极（7）发射。

公开(公告)号：US06498426B1

公开(公告)日：2002-12-24

申请号：US09557916

申请日：2000-04-21

申请人： Yoshifumi Watabe ,  Yukihiro Kondo ,  Koichi Aizawa ,  Takuya Komoda ,  Yoshiaki Honda ,  Takashi Hatai ,  Tsutomu Ichihara ,  Nobuyoshi Koshida

发明人： Yoshifumi Watabe ,  Yukihiro Kondo ,  Koichi Aizawa ,  Takuya Komoda ,  Yoshiaki Honda ,  Takashi Hatai ,  Tsutomu Ichihara ,  Nobuyoshi Koshida

IPC分类号： H01J100

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/025

摘要： A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.

摘要翻译： 场发射型电子源（10）设置有导电基板（1），形成在导电基板（1）的表面上的半导体层，半导体层的至少一部分被制成多孔的导电基板 形成在半导体层上的薄膜（7）。 通过在导电薄膜（7）和导电性基板（1）之间施加电压，使导电性薄膜（7）的导电性薄膜（7）通过半导体层从导电性薄膜（7）射出， 膜（7）用作抵靠导电基板（1）的正电极。 半导体层包括多孔半导体层（6），其中由纳米级微细半导体晶体构成的柱状结构（21）和多孔结构（25）共存，每个结构的表面被绝缘膜（22， 24）。 此外，半导体层的厚度方向上的多孔结构体（25）的平均尺寸小于或等于2μm。

公开(公告)号：US06765342B1

公开(公告)日：2004-07-20

申请号：US09688869

申请日：2000-10-17

申请人： Yoshiaki Honda ,  Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Takashi Hatai

发明人： Yoshiaki Honda ,  Tsutomu Ichihara ,  Takuya Komoda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Takashi Hatai

IPC分类号： H01J130

CPC分类号： B82Y10/00 ,  H01J1/312

摘要： A field emission-type electron source 10 includes an insulative substrate 11 in the form of a glass substrate having an electroconductive layer 8 formed thereon. A strong electrical field drift layer 6 in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer 8. This electroconductive layer 8 includes a lower electroconductive film 8a, made of copper and formed on the insulative substrate 11, and an upper electroconductive film 8b made of aluminum and formed over the electroconductive film 8a. The strong electrical field drift layer 6 is formed by forming a polycrystalline silicon layer on the electroconductive layer 8, rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film 8b has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.

摘要翻译： 场发射型电子源10包括形成有导电层8的玻璃基板形式的绝缘基板11。 在导电层8上形成氧化多孔多晶硅层形式的强电场漂移层6.该导电层8包括由铜制成的下部导电膜8a，并形成在绝缘基板11上， 由铝制成并形成在导电膜8a上的导电膜8b。 通过在导电层8上形成多晶硅层，形成强电场漂移层6，使多晶硅层多孔化，最终将其氧化。 上导电膜8b具有与硅反应容易的性质，因此可以抑制在形成多晶硅层期间发生的非晶层的形成。