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    Semiconductor device
    3.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5047090A

    公开(公告)日：1991-09-10

    申请号：US480203

    申请日：1990-02-14

    申请人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Jun Sakai ,  Keizi Kakite

    发明人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Jun Sakai ,  Keizi Kakite

    IPC分类号： H01L31/10 ,  H01L27/144 ,  H01L31/075 ,  H01L31/101

    CPC分类号： H01L31/076 ,  H01L27/1443 ,  H01L31/101 ,  Y02E10/548 ,  Y10S136/291 ,  Y10S136/293

    摘要： A semiconductor device includes laminated photoelectric conversion elements each having a semiconductor thin film carrying out the photoelectric conversion, the respective semiconductor thin film having a relationship L.ltoreq.1/.alpha.(.lambda.) when incident light is of a wavelength .lambda., the semiconductor thin film is of an absorbtion coefficient .alpha.(.lambda.) with respect to the light of the wavelength .lambda. and the carrier collecting length is L, whereby the optimum combination of the incident light wavelength and the sensitivity of the device can be obtained to realize a high photoelectric conversion efficiency.

    摘要翻译： 半导体器件包括各自具有执行光电转换的半导体薄膜的层叠光电转换元件，当入射光为波长λ时，相应的半导体薄膜具有L 1 /α（λ）的关系，半导体薄膜 膜相对于波长λ的光具有吸收系数α（λ），载流子收集长度为L，由此可以获得入射光波长与器件灵敏度的最佳组合，以实现高光电 转换效率。

    Optical control circuit and a semiconductor device for realizing same
    4.
    发明授权
    Optical control circuit and a semiconductor device for realizing same 失效
    光控电路及实现其的半导体器件

    公开(公告)号：US4916323A

    公开(公告)日：1990-04-10

    申请号：US247081

    申请日：1988-09-21

    申请人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Keizi Kakite ,  Jun Sakai

    发明人： Yutaka Hayashi ,  Shigeaki Tomonari ,  Keizi Kakite ,  Jun Sakai

    IPC分类号： H01L27/15 ,  H01L27/14 ,  H01L27/142 ,  H01L31/02 ,  H01L31/042 ,  H03K17/78

    CPC分类号： H01L31/02021 ,  H01L31/046 ,  Y02E10/50 ,  Y10S136/293

    摘要： An optical control circuit is formed by a first transistor, a first resistive element connected between control electrode and first output electrode of the first transistor. The first output electrode forms an emitter or source of the transistor, a second resistive element is connected between the control electrode and second output electrode of the first transistor. The second output electrode forms a collector or drain of the transistor and an array of photovoltaic elements is connected in parallel to the second resistive element. A second transistor has a control electrode connected to the second output electrode of the first transistor. High speed operation of the second transistor can be assured, any noise voltage applied to the control electrode of the second transistor can be effectively bypassed, and the first transistor can be simultaneously formed in a substrate of the second transistor to be integralized therewith.

    摘要翻译： 光控制电路由第一晶体管，连接在第一晶体管的控制电极和第一输出电极之间的第一电阻元件形成。 第一输出电极形成晶体管的发射极或源极，第二电阻元件连接在第一晶体管的控制电极和第二输出电极之间。 第二输出电极形成晶体管的集电极或漏极，并且光电元件阵列与第二电阻元件并联连接。 第二晶体管具有连接到第一晶体管的第二输出电极的控制电极。 可以确保第二晶体管的高速操作，可以有效地绕过施加到第二晶体管的控制电极的任何噪声电压，并且可以将第一晶体管同时形成在与其成一体的第二晶体管的基板中。