公开(公告)号：US20130189428A1

公开(公告)日：2013-07-25

申请号：US13535315

申请日：2012-06-27

申请人： Cedric Troadec ,  Jie Deng ,  Christian Joachim

发明人： Cedric Troadec ,  Jie Deng ,  Christian Joachim

IPC分类号： B05D1/28

CPC分类号： B05D1/28 ,  H01L21/67092

摘要： The present disclosure relates to a method for transferring target particles between two substrates, the method comprising the steps of: (a) contacting a receiver substrate with a stamp substrate having the target particles disposed thereon to transfer said target particles to the receiver substrate; and (b) applying a vacuum to the contacting substrates during said contacting step to prevent non-target particles from being deposited onto said receiver substrate.

摘要翻译： 本发明涉及一种用于在两个基板之间转移目标颗粒的方法，所述方法包括以下步骤：（a）使接收器基板与其上设置有目标颗粒的印模基板接触以将所述目标颗粒转移到接收器基板; 和（b）在所述接触步骤期间向接触的基底施加真空以防止非目标颗粒沉积到所述接收器基底上。

公开(公告)号：US20120203532A1

公开(公告)日：2012-08-09

申请号：US13023559

申请日：2011-02-09

申请人： Michael Claus Olsen ,  Jie Deng ,  Terence B. Hook ,  Madan Mohan Naga Nutakki

发明人： Michael Claus Olsen ,  Jie Deng ,  Terence B. Hook ,  Madan Mohan Naga Nutakki

IPC分类号： G06F17/50

CPC分类号： G06F17/5022 ,  G06F17/5036

摘要： Performing a transient analysis with a compact FET model that is predominantly intended for DC analysis, such as an IDDQ leakage model, to enable toggling logic states in sequential logic circuits that cannot otherwise be examined in a DC analysis. An embodiment enables examining the DC or AC conditions of any logic state of any logic circuit in a DC or AC analysis, and additionally, it eliminates a potentially long execution time of a transient analysis with a DC model. Further solved is the present need to run two simulations and to maintain two netlists in order to overcome being unable to toggle certain logic states in the DC analysis. The invention achieves the aforementioned in a single simulation with a single netlist that calculates the DC operating circuit conditions with a model A on the fly at predetermined times or in certain logic states, during a transient analysis with a model B.

摘要翻译： 使用主要用于直流分析（例如IDDQ泄漏模型）的紧凑型FET模型进行瞬态分析，以便能够在不能在DC分析中检查的顺序逻辑电路中切换逻辑状态。 一个实施例能够检查DC或AC分析中任何逻辑电路的任何逻辑状态的DC或AC条件，此外，它消除了具有DC模型的瞬态分析的潜在长的执行时间。 进一步的解决是目前需要运行两个模拟，并维护两个网表，以克服在DC分析中不能切换某些逻辑状态。 本发明在具有单个网表的单个模拟中实现上述，在单个网表中，在模型B的瞬态分析期间，在预定时间或在某些逻辑状态下，用模型A计算直流运行电路条件。

公开(公告)号：US20080138319A1

公开(公告)日：2008-06-12

申请号：US11975683

申请日：2007-10-19

申请人： Jie Deng ,  Eric D. Laywell ,  Bryon Petersen ,  Dennis A. Steindler

发明人： Jie Deng ,  Eric D. Laywell ,  Bryon Petersen ,  Dennis A. Steindler

IPC分类号： A61K48/00 ,  C12N5/06 ,  C12N5/10 ,  A61K35/30

CPC分类号： C12N5/0619 ,  A61K2035/124 ,  C12N5/0622 ,  C12N2501/01 ,  C12N2501/11 ,  C12N2501/115 ,  C12N2501/13 ,  C12N2501/235 ,  C12N2506/1353

摘要： Disclosed are cellular compositions, grafts and pharmaceutical products made from bone marrow (BM) cells useful for a wide array of cell-based therapies for diseases and disorders of the nervous system. Transgenic cells in accord with the invention express therapeutic or reporter genes encoded in viral vectors. The cells are capable of extensive expansion in vitro and can generate neurons and glial cells both in culture and in vivo. Upon administration to a nervous system tissue or site in a host subject, the cells can migrate to appropriate target sites and can assimilate therein, differentiating into both neurons and astrocytes without evidence of fusion with endogenous cells of the host nervous tissue. The cells can express an array of therapeutic gene products suitable for treatment of nervous system disorders. Particularly preferred for neurodegenerative disease applications are transgenic BM-derived neurogenic cells expressing neurotrophic factors.

摘要翻译： 公开了由骨髓（BM）细胞制成的细胞组合物，移植物和药物制品，其可用于广泛用于神经系统疾病和病症的基于细胞的疗法。 符合本发明的转基因细胞表达在病毒载体中编码的治疗或报告基因。 细胞能够在体外大量扩增，并且可以在培养和体内产生神经元和神经胶质细胞。 当给予宿主受试者的神经系统组织或部位时，细胞可以迁移到适当的靶位点并且可以在其中同化，分化成神经元和星形胶质细胞，而没有与宿主神经组织的内源性细胞融合的证据。 细胞可以表达适合于治疗神经系统疾病的一系列治疗性基因产物。 特别优选的神经变性疾病应用是表达神经营养因子的转基因BM衍生的神经源性细胞。

公开(公告)号：US08859624B2

公开(公告)日：2014-10-14

申请号：US13504178

申请日：2010-10-28

申请人： Jialiang Lin ,  Jie Deng ,  Hao Chen ,  Tao Zhang

发明人： Jialiang Lin ,  Jie Deng ,  Hao Chen ,  Tao Zhang

IPC分类号： A01N33/02 ,  A61K31/135 ,  A61F13/00 ,  A61K9/70 ,  A61K31/355 ,  A61K47/22 ,  A61K9/00 ,  A61K47/10 ,  A61K9/06 ,  A61K31/375

CPC分类号： A61K31/135 ,  A61K9/0014 ,  A61K9/06 ,  A61K9/7061 ,  A61K9/7069 ,  A61K31/355 ,  A61K31/375 ,  A61K47/10 ,  A61K47/22 ,  A61K2300/00

摘要： The present invention provides a stable composition of rasagiline comprising an effective dosage of rasagiline or its pharmaceutically acceptable salts and an antioxidant used as a stabilizer. The dosage forms of the composition are pharmaceutically common transdermal-drug delivery dosage form and mucoadhesive delivery dosage form, such as patch, gel, ointment, cream, cataplasm, film, spray and solution, etc. The composition can be used to prevent or treat mental disorders.

摘要翻译： 本发明提供雷沙吉兰的稳定组合物，其包含有效剂量的雷沙吉兰或其药学上可接受的盐和用作稳定剂的抗氧化剂。 组合物的剂型是药学上常见的透皮 - 药物递送剂型和粘膜粘附递送剂型，例如贴剂，凝胶，软膏，霜剂，粘膜，膜，喷雾剂和溶液等。该组合物可用于预防或治疗 精神错乱。

公开(公告)号：US08742502B2

公开(公告)日：2014-06-03

申请号：US13277108

申请日：2011-10-19

申请人： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

发明人： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC分类号： H01L27/12

CPC分类号： H01L29/7841 ,  H01L29/0688 ,  H01L29/36 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K2217/0018 ,  H03K2217/0054

摘要： A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

摘要翻译： 公开了一种用于提高具有累积电荷吸收（ACS）的MOSFET器件的线性灵敏度的方法和装置。 该方法和装置适于解决在采用累积电荷宿的装置中在期望的工作电压范围内的二阶和三阶互调谐波失真的劣化。

公开(公告)号：US20120190160A1

公开(公告)日：2012-07-26

申请号：US13428061

申请日：2012-03-23

申请人： Xiangdong Chen ,  Jie Deng ,  Weipeng Li ,  Deleep R. Nair ,  Jae-Eun Park ,  Daniel Tekleab ,  Xiaobin Yuan ,  Nam Sung Kim

发明人： Xiangdong Chen ,  Jie Deng ,  Weipeng Li ,  Deleep R. Nair ,  Jae-Eun Park ,  Daniel Tekleab ,  Xiaobin Yuan ,  Nam Sung Kim

IPC分类号： H01L21/335

CPC分类号： H01L21/823412 ,  H01L21/28202 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7835

摘要： A field effect transistor includes a partial SiGe channel, i.e., a channel including a SiGe channel portion, located underneath a gate electrode and a Si channel portion located underneath an edge of the gate electrode near the drain region. The SiGe channel portion can be located directly underneath a gate dielectric, or can be located underneath a Si channel layer located directly underneath a gate dielectric. The Si channel portion is located at the same depth as the SiGe channel portion, and contacts the drain region of the transistor. By providing a Si channel portion near the drain region, the GIDL current of the transistor is maintained at a level on par with the GIDL current of a transistor having a silicon channel only during an off state.

公开(公告)号：US20120007145A1

公开(公告)日：2012-01-12

申请号：US12831310

申请日：2010-07-07

申请人： Xiangdong Chen ,  Jie Deng ,  Weipeng Li ,  Deleep R. Nair ,  Jae-Eun Park ,  Daniel Tekleab ,  Xiaobin Yuan ,  Nam Sung Kim

发明人： Xiangdong Chen ,  Jie Deng ,  Weipeng Li ,  Deleep R. Nair ,  Jae-Eun Park ,  Daniel Tekleab ,  Xiaobin Yuan ,  Nam Sung Kim

IPC分类号： H01L29/165 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/823412 ,  H01L21/28202 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7835

摘要： A field effect transistor includes a partial SiGe channel, i.e., a channel including a SiGe channel portion, located underneath a gate electrode and a Si channel portion located underneath an edge of the gate electrode near the drain region. The SiGe channel portion can be located directly underneath a gate dielectric, or can be located underneath a Si channel layer located directly underneath a gate dielectric. The Si channel portion is located at the same depth as the SiGe channel portion, and contacts the drain region of the transistor. By providing a Si channel portion near the drain region, the GIDL current of the transistor is maintained at a level on par with the GIDL current of a transistor having a silicon channel only during an off state.

摘要翻译： 场效应晶体管包括部分SiGe沟道，即包括位于栅极下方的SiGe沟道部分的沟道部分，以及位于漏极区域附近的位于栅电极的边缘下方的Si沟道部分。 SiGe沟道部分可以位于栅极电介质的正下方，或者可以位于位于栅极电介质正下方的Si沟道层下方。 Si沟道部分位于与SiGe沟道部分相同的深度处，并与晶体管的漏极区域接触。 通过在漏极区附近提供Si沟道部分，晶体管的GIDL电流仅在断开状态下保持在与具有硅沟道的晶体管的GIDL电流相同的水平上。

公开(公告)号：US08053470B2

公开(公告)日：2011-11-08

申请号：US11911449

申请日：2006-04-12

申请人： Jinmai Xiao ,  Jie Deng ,  Jinhua Feng ,  Bo Xiao

发明人： Jinmai Xiao ,  Jie Deng ,  Jinhua Feng ,  Bo Xiao

IPC分类号： A61K31/295

CPC分类号： C07H23/00

摘要： The invention discloses a process for preparing a polynuclear ferric hydroxide-saccharide complex, including: adding an aqueous solution of an alkaline substance drop-wise into an aqueous solution of iron salt at a temperature of 5-20° C. until pH 6-8, collecting the polynuclear ferric hydroxide from the reaction mixture by a conventional method; reacting the polynuclear ferric hydroxide with a saccharide in a solution of an alkaline substance for 10-40 hours at 106-125° C. under pH 10-12, resulting in a crude product having an isoelectric point of 4.4-5.3 and a weight average molecular weight of 20,000-100,000 Daltons, and then harvesting the polynuclear ferric hydroxide-saccharide complex from the crude product. The process can precisely control the molecular weight of the polynuclear ferric hydroxide-saccharide complex without an effect on the other characteristics of the product, for example its saccharide content or isoelectric point etc. Furthermore, it is very simple and readily applicable in industry.

摘要翻译： 本发明公开了一种制备多核铁氢氧化物 - 糖复合物的方法，其包括：将碱性物质的水溶液滴加到铁盐水溶液中，温度为5-20℃直至pH6-8 ，通过常规方法从反应混合物中收集多核铁氢氧化物; 使多核铁氢氧化物与糖类在碱性物质的溶液中在106-125℃下在pH 10-12下反应10-40小时，得到等电点为4.4-5.3的粗产物，重均分子量 分子量为20,000-100,000道尔顿，然后从粗产物中收获多核铁氢氧化物 - 糖复合物。 该方法可以精确地控制多核铁氢氧化物 - 糖复合物的分子量，而不影响产品的其他特性，例如其糖含量或等电点等。此外，它非常简单且易于应用于工业中。

公开(公告)号：US20090136549A1

公开(公告)日：2009-05-28

申请号：US12281875

申请日：2007-03-06

申请人： Jialiang Lin ,  Jinmai Xiao ,  Jie Deng

发明人： Jialiang Lin ,  Jinmai Xiao ,  Jie Deng

IPC分类号： A61K9/00 ,  A61K31/136 ,  A61P25/28

CPC分类号： A61K31/135 ,  A61K9/7053 ,  A61K9/7061 ,  A61K9/7069 ,  A61K9/7092

摘要： The present invention relates to a rasagiline transdermal patch for treatment or prophylaxis of nervous system diseases, in which the patch comprises an inert backing layer chemically inert to substrate ingredients, a substrate layer comprising rasagiline or a pharmaceutically acceptable salt thereof, and a protective layer to be peeled off before use. The substrate layer is an adhesive system comprising an organic polymer material as basis and an inorganic or organic material as filler, and a plurality of micro-reservoirs containing rasagiline. The substrate further comprises one or more substances for enhancing the transdermal absorption of rasagiline, in which the above organic polymer material in the substrate is used for the reservoir of rasagiline and as adhesive.

摘要翻译： 本发明涉及一种用于治疗或预防神经系统疾病的雷沙吉兰透皮贴剂，其中贴片包括对底物成分具有化学惰性的惰性背衬层，包含雷沙吉兰或其药学上可接受的盐的底物层和保护层 使用前剥离。 基材层是以有机聚合物材料为基础和作为填料的无机或有机材料和含有雷沙吉兰的多个微储层的粘合剂体系。 底物还包含一种或多种用于增强雷沙吉兰透皮吸收的物质，其中基质中的上述有机聚合物材料用于雷沙吉兰的储库和粘合剂。