公开(公告)号：US20240008253A1

公开(公告)日：2024-01-04

申请号：US17855545

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Abhishek Anil SHARMA ,  Tahir GHANI ,  Anand S. MURTHY ,  Wilfred GOMES ,  Cory WEBER ,  Rishabh MEHANDRU ,  Sagar SUTHRAM ,  Pushkar RANADE

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10826

Abstract: Structures having memory access transistors with backside contacts are described. In an example, an integrated circuit structure includes a front-side structure including a device layer having a fin-based transistor, and a capacitor structure above the fin-based transistor of the device layer. A backside structure is below the front-side structure. The backside structure includes a conductive contact electrically connected to the fin-based transistor of the device layer.

公开(公告)号：US20240006531A1

公开(公告)日：2024-01-04

申请号：US17855573

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Abhishek Anil SHARMA ,  Rishabh MEHANDRU ,  Sagar SUTHRAM ,  Cory WEBER ,  Tahir GHANI ,  Anand S. MURTHY ,  Pushkar RANADE ,  Wilfred GOMES

IPC: H01L29/78 ,  H01L27/13 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L27/13 ,  H01L27/124 ,  H01L29/66666

Abstract: Structures having vertical transistors are described. In an example, an integrated circuit structure includes a channel structure on a drain contact layer, the channel structure having an opening extending there through. A gate dielectric layer is on a bottom and along sides of the opening, the gate dielectric layer laterally surrounded by the channel structure. A gate electrode is on and laterally surrounded by the gate dielectric layer. A source contact layer is on sides of a portion of the gate dielectric layer extending above the channel structure.

公开(公告)号：US20240006305A1

公开(公告)日：2024-01-04

申请号：US17855017

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Abhishek Anil SHARMA ,  Sagar SUTHRAM ,  Pushkar RANADE ,  Anand S. MURTHY ,  Tahir GHANI ,  Rishabh MEHANDRU ,  Cory WEBER

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L23/5226 ,  H01L23/5286 ,  H01L23/5329 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/775

Abstract: Structures having airgaps for backside signal routing or power delivery are described. In an example, an integrated circuit structure includes a front-side structure including a device layer having a plurality of nanowire-based transistors, and a plurality of metallization layers above the nanowire-based transistors of the device layer. A backside structure is below the nanowire-based transistors of the device layer. The backside structure includes a first conductive line laterally spaced apart from a second conductive line by an air gap.