摘要:
A sensing circuit for a semiconductor memory, comprising at least one detecting amplifier, said detecting amplifier comprising: a first circuital branch adapted to be electrically run through by a first current corresponding to the sum of a second current as a function of a comparison current and a cell current, said cell current being a function of a state of a memory cell to be read in a predetermined biasing condition; a second circuital branch coupled as a current mirror configuration with the first circuital branch, said second circuital branch being adapted in the operation to be run through by a third current proportional to the first current; a third circuital branch coupled to said second branch, said third circuital branch being adapted in the operation to sink a fourth current as a function of said comparison current; a fourth circuital branch coupled to said second and third circuital branches, said fourth circuital branch being adapted in the operation to be run through by a residual current equal to the difference between the third and the fourth current, said residual current assuming different values depending on the fact that the cell current is lower, equal or higher than the comparison current; residual current sensitive means adapted to generate an indication of the state of the memory cell as a function of a value of the residual current.
摘要:
An output buffer for providing a buffered current to a circuit load includes a plurality of operative stages, each one for generating a component of the buffered current and an enabling circuit for selectively enabling each operative stage. The output buffer further comprises at least one auxiliary stage and control means for measuring a control current that can be delivered by the at least one auxiliary stage and for activating the enabling means according to the measured control current.
摘要:
A method for addressing redundant columns in a nonvolatile memory, which receives, at inputs, selection addresses and comprises a plurality of redundant columns, each including a respective bit line and a plurality of memory cells connected to the bit line. The addressing method comprises the steps of: detecting a transition in the selection addresses; starting charging of all the bit lines upon detection of the transition in the addresses; then detecting whether one of the redundant columns is addressed; should one of the redundant columns be found to be addressed, proceeding with charging of the bit line of the redundant column addressed and interrupting charging of the bit lines of the redundant columns not addressed; and should none of the redundant columns be found to be addressed, interrupting charging of all the bit lines.
摘要:
An architecture for implementing an integrated capacity advantageously includes a capacitive block inserted between a first and a second voltage reference. The block is formed from elementary capacitive modules. An enable block is inserted between the first voltage reference and the capacitive block and includes switches connected to the elementary capacitive modules and driven on their control terminals by control signals. Each switch of the enable block is inserted between the first voltage reference and a first end of a corresponding elementary capacitive module. A verify and enable circuit is connected to the first voltage reference, as well as at the input of the first end of the elementary capacitive modules and at the output of the control terminals of the switches of the enable block. The verify and enable circuit detects the presence of a current value in each of the elementary capacitive modules and, if said current is detected, disables that elementary capacitive module of the capacitive block using the corresponding switch of the enable block.
摘要:
A read circuit for non-volatile memories having an array section, with a corresponding bitline, and a reference section, with a corresponding reference bitline. A differential amplifier for comparing voltage signals obtained by current/voltage conversion of a current signal of an array cell and of a reference current signal is connected to the respective bit lines. A cascode transistor for each one of the array and reference sections, each driven by a NOR logic gate; a charge transistor for the bitline and a charge transistor for the reference bitline; column decoding transistors for the array section and for the reference section; the circuit further comprising an additional transistor which is connected between the NOR gate of the array side and a node for acquiring the array voltage sent to the differential amplifier, the additional transistor increasing the speed of the process for reading the bitline when the bitline is not charged.
摘要:
An architecture for implementing an integrated capacity includes a capacitive block inserted between first and second voltage reference. The block is formed The block is formed from elementary capacitive modules. An enable block is inserted between the first voltage reference and the capacitive block and includes switches connected to the elementary capacitive modules and driven on their control terminals by control signals. Each switch of the enable block is inserted between the first voltage reference and a first end of a corresponding elementary capacitive module. A verify and enable circuit is connected to the first voltage reference, as well as at the input of the first end of the elementary capacitive modules and at the output of the control terminals of the switches of the enable block. The verify and enable circuit detects the presence of a current value in each of the elementary capacitive modules and, if said current is detected, disables that elementary capacitive module of the capacitive block using the corresponding switch of the enable block.
摘要:
A voltage-down converter for providing an output voltage lower than a power supply voltage of the converter is proposed. The converter includes voltage regulation means for obtaining an intermediate voltage corresponding to the output voltage from the power supply voltage by controlling a variable-conductivity element with a control signal resulting from a comparison between the intermediate voltage and a reference voltage, and an output stage for obtaining the output voltage from the power supply voltage by controlling a further variable-conductivity element with the control signal, wherein the further variable-conductivity element has a modular structure with at least one set of multiple basic modules, the converter further including means for enabling and/or disabling the modules of each set in succession according to a comparison between the output voltage and the intermediate voltage.
摘要:
A voltage down converter is provided that includes a voltage regulator and voltage driver circuit branches. The voltage regulator receives a first voltage, has a regulation node providing a regulated second voltage that is lower than the first voltage, and has a control node providing a control voltage corresponding to the second voltage. One voltage driver circuit branch receives the first voltage and includes a variable-conductivity element having a control terminal coupled to the control node for controlling a current sunk by the variable-conductivity element. This one voltage driver circuit branch has a voltage supply node supplying a down-converted voltage corresponding to the second voltage. At least one additional voltage driver circuit branch receives the first voltage and is coupled to the voltage supply node. The additional voltage driver circuit branch includes a further variable-conductivity element having a control terminal coupled to the control node for controlling a current sunk by the further variable-conductivity element, and a switching circuit for selectively enabling the further variable-conductivity element so as to keep the down-converted voltage at a prescribed value depending on the regulated second voltage.
摘要:
A voltage-down converter for providing an output voltage lower than a power supply voltage of the converter is proposed. The converter includes voltage regulation means for obtaining an intermediate voltage corresponding to the output voltage from the power supply voltage by controlling a variable-conductivity element with a control signal resulting from a comparison between the intermediate voltage and a reference voltage, and an output stage for obtaining the output voltage from the power supply voltage by controlling a further variable-conductivity element with the control signal, wherein the further variable-conductivity element has a modular structure with at least one set of multiple basic modules, the converter further including means for enabling and/or disabling the modules of each set in succession according to a comparison between the output voltage and the intermediate voltage.
摘要:
A sense amplifier for reading a non-volatile memory cell includes a bitline current path connected to a non-volatile memory cell to be read, and a reference current path connected to a reference memory cell. A current mirror includes an input transistor and a corresponding input node, and an output transistor and a corresponding output node. The current mirror converts currents in the reference current path and the bitline current path to respective voltages on the input and output nodes. An equalization circuit equalizes the voltages on the input and output nodes of the current mirror and is activated by a command signal. The equalization circuit includes a switch controlled by the command signal, and a diode-connected load transistor connected in parallel to the output transistor of the current mirror and connected to the output node thereof through the switch. A current steering path draws from the bitline current path a current when enabled by the command signal so that the load transistor establishes a desired voltage on the output node.