Liquid crystal display wherein the data lines covered by each pixel electrode are supplied with data signals of opposite polarities
    21.
    发明授权
    Liquid crystal display wherein the data lines covered by each pixel electrode are supplied with data signals of opposite polarities 有权
    其中由每个像素电极覆盖的数据线被提供有相反极性的数据信号的液晶显示器

    公开(公告)号:US08711075B2

    公开(公告)日:2014-04-29

    申请号:US12252496

    申请日:2008-10-16

    IPC分类号: G09G3/36 G09G5/02 G02F1/1343

    摘要: A liquid crystal display includes first and second pixel electrodes, first to fourth data lines, and a first gate line. The first pixel electrode has separated first primary and secondary sub-pixel electrodes. The second pixel electrode has separated second primary and secondary sub-pixel electrodes. The first data line is coupled to the first secondary sub-pixel electrode and covered by the first pixel electrode. The second data line is coupled to the first primary sub-pixel electrode and covered by the second pixel electrode. The third data line is coupled to the second primary sub-pixel electrode and covered by the second pixel electrode. The fourth data line is coupled to the second secondary sub-pixel electrode. The first gate line is coupled to the first pixel electrode and the second pixel electrode.

    摘要翻译: 液晶显示器包括第一和第二像素电极,第一至第四数据线和第一栅极线。 第一像素电极已经分离出第一初级和次级子像素电极。 第二像素电极具有分离的第二初级和次级子像素电极。 第一数据线耦合到第一辅助子像素电极并被第一像素电极覆盖。 第二数据线耦合到第一主要子像素电极并被第二像素电极覆盖。 第三数据线耦合到第二主子像素电极并被第二像素电极覆盖。 第四数据线耦合到第二辅助子像素电极。 第一栅极线耦合到第一像素电极和第二像素电极。

    LIQUID CRYSTAL DISPLAY ELEMENT AND PIXEL STRUCTURE
    22.
    发明申请
    LIQUID CRYSTAL DISPLAY ELEMENT AND PIXEL STRUCTURE 审中-公开
    液晶显示元件和像素结构

    公开(公告)号:US20120320028A1

    公开(公告)日:2012-12-20

    申请号:US13593685

    申请日:2012-08-24

    IPC分类号: G09G3/36 G06F3/038

    摘要: A pixel structure of liquid crystal display includes a first and a second sub-pixel electrodes, a first and a second data lines, a gate line, and a first and a second transistors. The first and the second sub-pixel electrodes disposed in the first and second sub-pixel areas respectively include at least two display domains at left and right. The first data line is disposed under the interface between two domains of each of the first and second sub-pixel electrodes, and the second data line is disposed under the edges of the first and second sub-pixel electrodes. The gate line is disposed between the first and second sub-pixel areas. The first sub-pixel electrode is controlled by the gate line and the first data line through the first transistor. The second sub-pixel electrode is controlled by the gate line and the second data line through the second transistor.

    摘要翻译: 液晶显示器的像素结构包括第一和第二子像素电极,第一和第二数据线,栅极线以及第一和第二晶体管。 设置在第一子像素区域和第二子像素区域中的第一子像素电极和第二子像素电极分别在左侧和右侧包括至少两个显示域。 第一数据线设置在第一和第二子像素电极中的每一个的两个畴之间的界面下方,并且第二数据线设置在第一和第二子像素电极的边缘下方。 栅极线设置在第一和第二子像素区域之间。 第一子像素电极由栅极线和第一数据线通过第一晶体管控制。 第二子像素电极由栅极线和第二数据线通过第二晶体管控制。

    WIDE-FIELD LENSLESS FLUORESCENT IMAGING ON A CHIP
    24.
    发明申请
    WIDE-FIELD LENSLESS FLUORESCENT IMAGING ON A CHIP 有权
    芯片上的宽带无线荧光成像

    公开(公告)号:US20130092821A1

    公开(公告)日:2013-04-18

    申请号:US13695267

    申请日:2011-04-25

    IPC分类号: H01L27/146 G01N21/64

    摘要: An imaging device uses a fiber optic faceplate (FOF) with a compressive sampling algorithm for the fluorescent imaging of a sample over an large field-of-view without the need for any lenses or mechanical scanning. The imaging device includes a sample holder configured to hold a sample and a prism or hemispherical glass surface disposed adjacent the sample holder on a side opposite the lower surface of the sample holder. A light source is configured to illuminate the sample via the prism or the hemispherical surface, wherein substantially all of the light is subject to total internal reflection at the lower surface of the sample holder. The FOF is disposed adjacent to the lower surface of the sample holder, the fiber optic array having an input side and an output side. The device includes an imaging sensor array disposed adjacent to the output side of the fiber optic array.

    摘要翻译: 成像装置使用具有压缩采样算法的光纤面板(FOF),用于在大视野范围内的样品的荧光成像,而不需要任何透镜或机械扫描。 成像装置包括:样本保持器,其被配置为保持样本和邻近样本保持器设置在与样本保持器的下表面相对的一侧的棱镜或半球形玻璃表面。 光源被配置为经由棱镜或半球形表面照射样品,其中基本上所有的光在样品保持器的下表面处受到全内反射。 FOF设置在样品架的下表面附近,光纤阵列具有输入侧和输出侧。 该装置包括邻近光纤阵列的输出侧设置的成像传感器阵列。

    Liquid crystal display element and pixel structure
    25.
    发明授权
    Liquid crystal display element and pixel structure 有权
    液晶显示元件和像素结构

    公开(公告)号:US08305539B2

    公开(公告)日:2012-11-06

    申请号:US12213252

    申请日:2008-06-17

    IPC分类号: G02F1/1343 G02F1/136

    摘要: A pixel structure of liquid crystal display including a first and a second sub-pixel electrodes, a first and a second data lines, a gate line, and a first and a second transistors is provided. The first and the second sub-pixel electrodes disposed in the first and second sub-pixel areas respectively include at least two display domains at left and right. The first data line is disposed under the interface between two domains of each of the first and second sub-pixel electrodes, and the second data line is disposed under the edges of the first and second sub-pixel electrodes. The gate line is disposed between the first and second sub-pixel areas. The first sub-pixel electrode is controlled by the gate line and the first data line through the first transistor. The second sub-pixel electrode is controlled by the gate line and the second data line through the second transistor.

    摘要翻译: 提供包括第一和第二子像素电极,第一和第二数据线,栅极线以及第一和第二晶体管的液晶显示器的像素结构。 设置在第一子像素区域和第二子像素区域中的第一子像素电极和第二子像素电极分别在左侧和右侧包括至少两个显示域。 第一数据线设置在第一和第二子像素电极中的每一个的两个畴之间的界面下方,并且第二数据线设置在第一和第二子像素电极的边缘下方。 栅极线设置在第一和第二子像素区域之间。 第一子像素电极由栅极线和第一数据线通过第一晶体管控制。 第二子像素电极由栅极线和第二数据线通过第二晶体管控制。

    Metal-oxide-silicon device including nanometer scaled oxide structure to enhance light-emitting efficiency
    26.
    发明授权
    Metal-oxide-silicon device including nanometer scaled oxide structure to enhance light-emitting efficiency 有权
    金属氧化物硅器件包括纳米级氧化物结构,以提高发光效率

    公开(公告)号:US06770903B2

    公开(公告)日:2004-08-03

    申请号:US10251890

    申请日:2002-09-23

    IPC分类号: H01L2906

    摘要: A metal-oxide-silicon (MOS) device that at least includes a silicon-based substrate, a nanometer scaled oxide layer formed on the silicon-based substrate and a metal layer formed on the oxide layer, is disclosed. The present invention basically uses a nanometer scaled oxide structure that result in a non-uniform tunneling current to enhance light-emitting efficiency. The manufacturing steps of the MOS device according to the present invention are quite similar to those of conventional MOS device, so the MOS device according to the present invention can be integrated with the current silicon-based integrated circuit chip. Further the application fields of the silicon-based chip and material can be extended. The cost of MOS device can be reduced and its practicality can be increased.

    摘要翻译: 公开了一种金属氧化物硅(MOS)器件,其至少包括硅基衬底,形成在硅基衬底上的纳米级氧化物层和形成在氧化物层上的金属层。 本发明基本上使用纳米级氧化物结构,其导致不均匀的隧道电流以增强发光效率。 根据本发明的MOS器件的制造步骤与常规MOS器件的制造步骤非常相似,因此根据本发明的MOS器件可以与当前的硅基集成电路芯片集成。 此外,可以扩展硅基芯片和材料的应用领域。 可以降低MOS器件的成本,提高其实用性。