摘要:
A pixel structure of liquid crystal display including a first and a second sub-pixel electrodes, a first and a second data lines, a gate line, and a first and a second transistors is provided. The first and the second sub-pixel electrodes disposed in the first and second sub-pixel areas respectively include at least two display domains at left and right. The first data line is disposed under the interface between two domains of each of the first and second sub-pixel electrodes, and the second data line is disposed under the edges of the first and second sub-pixel electrodes. The gate line is disposed between the first and second sub-pixel areas. The first sub-pixel electrode is controlled by the gate line and the first data line through the first transistor. The second sub-pixel electrode is controlled by the gate line and the second data line through the second transistor.
摘要:
A pixel structure of liquid crystal display including a first and a second sub-pixel electrodes, a first and a second data lines, a gate line, and a first and a second transistors is provided. The first and the second sub-pixel electrodes disposed in the first and second sub-pixel areas respectively include at least two display domains at left and right. The first data line is disposed under the interface between two domains of each of the first and second sub-pixel electrodes, and the second data line is disposed under the edges of the first and second sub-pixel electrodes. The gate line is disposed between the first and second sub-pixel areas. The first sub-pixel electrode is controlled by the gate line and the first data line through the first transistor. The second sub-pixel electrode is controlled by the gate line and the second data line through the second transistor.
摘要:
A liquid crystal display includes first and second pixel electrodes, first to fourth data lines, and a first gate line. The first pixel electrode has separated first primary and secondary sub-pixel electrodes. The second pixel electrode has separated second primary and secondary sub-pixel electrodes. The first data line is coupled to the first secondary sub-pixel electrode and covered by the first pixel electrode. The second data line is coupled to the first primary sub-pixel electrode and covered by the second pixel electrode. The third data line is coupled to the second primary sub-pixel electrode and covered by the second pixel electrode. The fourth data line is coupled to the second secondary sub-pixel electrode. The first gate line is coupled to the first pixel electrode and the second pixel electrode.
摘要:
A pixel structure of liquid crystal display includes a first and a second sub-pixel electrodes, a first and a second data lines, a gate line, and a first and a second transistors. The first and the second sub-pixel electrodes disposed in the first and second sub-pixel areas respectively include at least two display domains at left and right. The first data line is disposed under the interface between two domains of each of the first and second sub-pixel electrodes, and the second data line is disposed under the edges of the first and second sub-pixel electrodes. The gate line is disposed between the first and second sub-pixel areas. The first sub-pixel electrode is controlled by the gate line and the first data line through the first transistor. The second sub-pixel electrode is controlled by the gate line and the second data line through the second transistor.
摘要:
A LCD panel in which a pixel has a first sub-pixel area and a second sub-pixel area, each area having a storage capacitor. Each pixel has a first gate line for providing a first gate-line signal for charging the first and second storage capacitors, and a second gate line for providing a second gate-line signal for removing part of the charges in the second storage capacitor to a third capacitor after the first gate-line signal has passed. The width of the first and second gate-line signals and their timing can be varied so that the first gate-line signal provided to a row can be used as the second gate-line signal to one of the preceding rows. In some embodiments, a pixel in each row has a duplicate pixel arranged to similarly receive the first and second gate-line signals, but data signals are received from different data lines.
摘要:
A display apparatus, pixel structure and drive method thereof are provided. The display apparatus comprises a gate drive chip, a first gate line, a second gate line, a first pixel unit, and a second pixel unit. The gate driver is configured to generate a first gate drive signal and a second gate drive signal. The first and second gate drive signals are outputted to the first and second gate lines, respectively. Furthermore, the first and second gate drive signals are configured to adjust a first feed through (FT) voltage generated by a first pixel area of the first pixel unit, a second FT voltage generated by a second pixel area of the first pixel unit, a third FT voltage generated by a third pixel area of the second pixel unit, and a fourth FT voltage generated by a fourth pixel area of the second pixel unit.
摘要:
A display apparatus, pixel structure and drive method thereof are provided. The display apparatus comprises a gate drive chip, a first gate line, a second gate line, a first pixel unit, and a second pixel unit. The gate driver is configured to generate a first gate drive signal and a second gate drive signal. The first and second gate drive signals are outputted to the first and second gate lines, respectively. Furthermore, the first and second gate drive signals are configured to adjust a first feed through (FT) voltage generated by a first pixel area of the first pixel unit, a second FT voltage generated by a second pixel area of the first pixel unit, a third FT voltage generated by a first pixel area of the second pixel unit, and a fourth FT voltage generated by a second pixel area of the second pixel unit.
摘要:
A LCD panel in which a pixel has a first sub-pixel area and a second sub-pixel area, each area having a storage capacitor. Each pixel has a first gate line for providing a first gate-line signal for charging the first and second storage capacitors, and a second gate line for providing a second gate-line signal for removing part of the charges in the second storage capacitor to a third capacitor after the first gate-line signal has passed. The width of the first and second gate-line signals and their timing can be varied so that the first gate-line signal provided to a row can be used as the second gate-line signal to one of the preceding rows. In some embodiments, a pixel in each row has a duplicate pixel arranged to similarly receive the first and second gate-line signals, but data signals are received from different data lines.
摘要:
The current invention provides a method of determining the lifetime of a semiconductor device due to time dependent dielectric breakdown (TDDB). This method includes providing a plurality of samples of dielectric layer disposed as a gate dielectric layer of a MOS transistor, approximating a source/drain current density distribution as a first function of voltage applied on the samples, approximating a substrate current density distribution as a second function of voltage applied on the samples, approximating a dielectric layer lifetime distribution as a third function of source/drain current density and substrate current density in the samples, deriving, from the first, the second, and the third functions, an empirical model wherein a dielectric layer lifetime is a function of voltage applied thereon, and using the model to determine dielectric layer lifetime at a pre-determined operating gate voltage.
摘要:
A method for testing a batch of semiconductor devices in wafer level is provided. The method includes the following steps: (a) obtaining a breakdown voltage of gate dielectric of each semiconductor device; (b) applying, to the gate dielectric of each semiconductor device, a stress voltage below the breakdown voltage but above a base voltage of gate dielectric of the semiconductor devices; (c) after the step (b), measuring currents of gate dielectric of each semiconductor devices at the base voltage; and (d) obtaining a tailing distribution from the measured currents.