Method of forming a gate oxide film for a high voltage region of a flash memory device
    21.
    发明申请
    Method of forming a gate oxide film for a high voltage region of a flash memory device 失效
    形成闪存器件的高电压区域的栅极氧化膜的方法

    公开(公告)号:US20060258106A1

    公开(公告)日:2006-11-16

    申请号:US11167961

    申请日:2005-06-28

    申请人: Eun Kim

    发明人: Eun Kim

    IPC分类号: H01L21/336

    摘要: A method of forming a gate oxide film for high voltage region of semiconductor devices includes forming patterns on a semiconductor substrate having a high voltage region, thereby exposing only a gate oxide film formation region for high voltage, forming a metal oxidization layer on the entire surface, and performing a process of removing the patterns, thereby forming the metal oxidization layer only in the gate oxide film formation region for high voltage.

    摘要翻译: 形成用于半导体器件的高电压区域的栅极氧化膜的方法包括在具有高电压区域的半导体衬底上形成图案,从而仅暴露高电压的栅极氧化膜形成区域,在整个表面上形成金属氧化层 ,并且执行去除图案的处理,从而仅在用于高电压的栅极氧化膜形成区域中形成金属氧化层。

    WASHING MACHINE AND OPERATING METHOD THEREOF
    25.
    发明申请
    WASHING MACHINE AND OPERATING METHOD THEREOF 有权
    洗衣机及其操作方法

    公开(公告)号:US20080028540A1

    公开(公告)日:2008-02-07

    申请号:US11828008

    申请日:2007-07-25

    IPC分类号: D06F39/00 D06B19/00

    摘要: A washing machine and an operating method of the washing machine are provided. In the operating method of the washing machine, it is determined whether a washing machine has a regular laundry load or a single laundry load based on the amount of laundry and the number of times of detection of the amount of laundry. Therefore, it is possible to precisely determine the laundry load of a washing machine, reduce the time taken to determine the laundry load of a washing machine, and prevent a washing machine from being damaged by a misreading of the laundry load of a washing machine.

    摘要翻译: 提供洗衣机和洗衣机的操作方法。 在洗衣机的操作方法中,基于洗衣量和洗衣量的检测次数来确定洗衣机是否具有规则的衣物负荷或单一的衣物负荷。 因此,可以精确地确定洗衣机的衣物负荷,减少确定洗衣机的衣物负载所花费的时间,并且防止洗衣机被洗衣机的衣物负载误读而损坏。

    METHOD OF ALLOCATING RADIO RESOURCES IN MULTI-CARRIER SYSTEM
    26.
    发明申请
    METHOD OF ALLOCATING RADIO RESOURCES IN MULTI-CARRIER SYSTEM 有权
    在多载波系统中分配无线电资源的方法

    公开(公告)号:US20070264936A1

    公开(公告)日:2007-11-15

    申请号:US11671960

    申请日:2007-02-06

    IPC分类号: H04B1/00

    摘要: A method of allocating radio resources in a multi-carrier system is disclosed, by which a signaling message can be efficiently transmitted according to necessity of a user equipment. In a user equipment of a mobile communication system transceiving data using a plurality of subcarriers, the present invention includes the steps of if the signaling message to be transmitted is generated in the user equipment, generating a preamble sequence according to a user equipment identifier to identify the user equipment, transmitting a preamble signal including the preamble sequence and the signaling message to a base station, and receiving an acknowledgement signal for the preamble signal generated according to the user equipment identifier.

    摘要翻译: 公开了一种在多载波系统中分配无线电资源的方法,通过该方法可以根据用户设备的需要有效地发送信令消息。 在使用多个子载波收发数据的移动通信系统的用户设备中,本发明包括以下步骤:如果在用户设备中生成要发送的信令消息,则根据用户设备标识符生成前导序列以识别 所述用户设备向基站发送包括所述前导序列和所述信令消息的前同步信号,以及接收根据所述用户设备标识符生成的所述前导信号的确认信号。

    Method of forming a gate oxide film for a high voltage region of a flash memory device
    27.
    发明申请
    Method of forming a gate oxide film for a high voltage region of a flash memory device 审中-公开
    形成闪存器件的高电压区域的栅极氧化膜的方法

    公开(公告)号:US20070210358A1

    公开(公告)日:2007-09-13

    申请号:US11801006

    申请日:2007-05-08

    申请人: Eun Kim

    发明人: Eun Kim

    IPC分类号: H01L29/94

    摘要: A method of forming a gate oxide film for high voltage region of semiconductor devices includes forming patterns on a semiconductor substrate having a high voltage region, thereby exposing only a gate oxide film formation region for high voltage, forming a metal oxidization layer on the entire surface, and performing a process of removing the patterns, thereby forming the metal oxidization layer only in the gate oxide film formation region for high voltage.

    摘要翻译: 形成用于半导体器件的高电压区域的栅极氧化膜的方法包括在具有高电压区域的半导体衬底上形成图案,从而仅暴露高电压的栅极氧化膜形成区域,在整个表面上形成金属氧化层 ,并且执行去除图案的处理,从而仅在用于高电压的栅极氧化膜形成区域中形成金属氧化层。

    Refrigerator for managing food by using RFID
    30.
    发明申请
    Refrigerator for managing food by using RFID 有权
    使用RFID管理食物的冰箱

    公开(公告)号:US20070016852A1

    公开(公告)日:2007-01-18

    申请号:US11440440

    申请日:2006-05-25

    IPC分类号: G06F17/00

    摘要: Refrigerator for managing food by using RFID including a plurality of storage portions divided in the refrigerator for storing food, RFID devices each having storage information of each kind of food stored in the storage portions, and controller for reading the storage information and setting up the storage portion which maintains a storage condition suitable to the storage information read thus, thereby permitting easy storage of food in a storage portion having the storage condition by using the RFID device.

    摘要翻译: 用于通过使用包含分配在冰箱中的多个存储部分来存储食物的RFID来管理食物的冰箱,每个具有存储在存储部分中的各种食物的存储信息的RFID设备,以及用于读取存储信息和设置存储器的控制器 维持适合于读取的存储信息的存储条件的部分,从而允许通过使用RFID设备容易地将食物存储在具有存储条件的存储部分中。