公开(公告)号：US20060013988A1

公开(公告)日：2006-01-19

申请号：US11158079

申请日：2005-06-22

申请人： Yuuki Tauchi ,  Junichi Nakai ,  Katsutoshi Takagi

发明人： Yuuki Tauchi ,  Junichi Nakai ,  Katsutoshi Takagi

IPC分类号： B32B3/02

CPC分类号： C23C14/3414 ,  C23C14/185 ,  G11B7/00736 ,  G11B7/258 ,  G11B7/259 ,  Y10T428/21

摘要： A Ag alloy reflective film for an optical information recording medium contains Ag as a main component, and at least one selected from Nd, Sn, Gd and In in a total amount of more than 3.0 atomic percent and less than or equal to 10 atomic percent. The reflective film can further contain 0.01 to 3 atomic percent of at least one of Bi and Sb, and/or can further contain comprising 20 atomic percent or less of at least one of Mn, Cu, La and Zn. An optical information recording medium includes the Ag alloy reflective film and can be subjected to laser marking. A Ag alloy sputtering target has a similar composition to that of the Ag alloy reflective film.

摘要翻译： 用于光学信息记录介质的Ag合金反射膜包含Ag作为主要成分，并且选自Nd，Sn，Gd和In中的至少一种总量大于3.0原子％且小于或等于10原子％ 。 反射膜还可以含有0.01〜3原子％的Bi和Sb中的至少一种，和/或可以进一步含有包含20原子％以下的Mn，Cu，La和Zn中的至少一种。 光学信息记录介质包括Ag合金反射膜，并可进行激光打标。 Ag合金溅射靶具有与Ag合金反射膜相似的组成。

公开(公告)号：US20050238839A1

公开(公告)日：2005-10-27

申请号：US11103615

申请日：2005-04-12

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi

IPC分类号： C22C5/06 ,  C23C14/14 ,  G11B7/253 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/258 ,  G11B7/259 ,  B32B3/02

CPC分类号： G11B7/258 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/259 ,  Y10T428/21

摘要： The present invention has been completed in view of such situation, and an object of the present invention is to find a Ag based alloy which exhibits high cohesion resistance, high light resistance, high heat resistance, high reflectivity, high transmissivity, low absorptivity, and high thermal conductivity of the level which had not been realized by the pure Ag or by the conventional Ag alloys, and on the bases of such alloy, to provide a semi-reflective film and a reflective film for an optical information recording medium provided with excellent writing/reading properties and long term reliability; sputtering target for an optical information recording medium used in depositing such semi-reflective film and the reflective film; and an optical information recording medium provided with such semi-reflective film or the reflective film. A semi-reflective film or reflective film for an optical information recording medium comprising a Ag based alloy, wherein the Ag based alloy comprises 0.005 to 0.40% (at % unless otherwise noted) of Bi and 0.05 to 5% in total of at least one element selected from Zn, Al, Ga, In, Si, Ge, and Sn.

摘要翻译： 发明内容本发明是鉴于这种情况而完成的，其目的在于找到具有高内聚力，高耐光性，高耐热性，高反射率，高透射率，低吸收率的Ag系合金，以及 通过纯Ag或常规Ag合金未实现的水平的高导热性，并且在这种合金的基础上，提供半反射膜和用于光学信息记录介质的反射膜，其提供优异的光学信息记录介质 写/读性能和长期可靠性; 用于沉积这种半反射膜和反射膜的光学信息记录介质的溅射靶; 以及设置有这种半反射膜或反射膜的光学信息记录介质。 一种用于光学信息记录介质的半反射膜或反射膜，其包括Ag基合金，其中所述Ag基合金包含Bi的0.005至0.40％（除非另有说明）为0.005至0.40％，并且总共为至少一种为0.05至5％ 元素选自Zn，Al，Ga，In，Si，Ge和Sn。

公开(公告)号：US20100264018A1

公开(公告)日：2010-10-21

申请号：US12793257

申请日：2010-06-03

申请人： Katsutoshi TAKAGI ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

发明人： Katsutoshi TAKAGI ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

IPC分类号： C23C14/34 ,  B21D28/00

CPC分类号： C22C5/06 ,  C22F1/14 ,  C23C14/3414

摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave

摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave

公开(公告)号：US07763126B2

公开(公告)日：2010-07-27

申请号：US10564502

申请日：2004-07-14

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

IPC分类号： C22C1/02

CPC分类号： C22C5/06 ,  C22F1/14 ,  C23C14/3414

摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.

摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave-Dmin）/ Dave×100（％）Dmax：所有选择位置的粒径D的最大值Dmin： D在所有选定的位置Dave：所有选定位置的粒度D的平均值。

公开(公告)号：US08123875B2

公开(公告)日：2012-02-28

申请号：US12793257

申请日：2010-06-03

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

IPC分类号： C23C14/34

CPC分类号： C22C5/06 ,  C22F1/14 ,  C23C14/3414

摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave

摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave

公开(公告)号：US07704581B2

公开(公告)日：2010-04-27

申请号：US11103615

申请日：2005-04-12

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi

IPC分类号： B32B3/02

CPC分类号： G11B7/258 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/259 ,  Y10T428/21

摘要： The present invention has been completed in view of such situation, and an object of the present invention is to find a Ag based alloy which exhibits high cohesion resistance, high light resistance, high heat resistance, high reflectivity, high transmissivity, low absorptivity, and high thermal conductivity of the level which had not been realized by the pure Ag or by the conventional Ag alloys, and on the bases of such alloy, to provide a semi-reflective film and a reflective film for an optical information recording medium provided with excellent writing/reading properties and long term reliability; sputtering target for an optical information recording medium used in depositing such semi-reflective film and the reflective film; and an optical information recording medium provided with such semi-reflective film or the reflective film.A semi-reflective film or reflective film for an optical information recording medium comprising a Ag based alloy, wherein the Ag based alloy comprises 0.005 to 0.40% (at % unless otherwise noted) of Bi and 0.05 to 5% in total of at least one element selected from Zn, Al, Ga, In, Si, Ge, and Sn.

摘要翻译： 发明内容本发明是鉴于这种情况而完成的，其目的在于找到具有高内聚力，高耐光性，高耐热性，高反射率，高透射率，低吸收率的Ag系合金，以及 通过纯Ag或常规Ag合金未实现的水平的高导热性，并且在这种合金的基础上，提供半反射膜和用于光学信息记录介质的反射膜，其提供优异的光学信息记录介质 写/读性能和长期可靠性; 用于沉积这种半反射膜和反射膜的光学信息记录介质的溅射靶; 以及设置有这种半反射膜或反射膜的光学信息记录介质。 一种用于光学信息记录介质的半反射膜或反射膜，其包括Ag基合金，其中所述Ag基合金包含Bi的0.005至0.40％（除非另有说明）为0.005至0.40％，并且总共为至少一种为0.05至5％ 元素选自Zn，Al，Ga，In，Si，Ge和Sn。

公开(公告)号：US20050287333A1

公开(公告)日：2005-12-29

申请号：US11168497

申请日：2005-06-29

申请人： Katsutoshi Takagi ,  Yuuki Tauchi ,  Junichi Nakai

发明人： Katsutoshi Takagi ,  Yuuki Tauchi ,  Junichi Nakai

IPC分类号： C22C5/06 ,  C23C14/20 ,  C23C14/34 ,  G11B7/24038 ,  G11B7/258 ,  G11B7/259 ,  G11B7/26 ,  B32B3/02

CPC分类号： C22C5/06 ,  C23C14/205 ,  C23C14/3414 ,  G11B7/24038 ,  G11B7/258 ,  G11B7/259 ,  G11B7/266 ,  Y10T428/21

摘要： Each of a semi-reflective film or reflective film for an optical information recording medium, and a Ag based alloy sputtering target includes a Ag based alloy containing 0.01 to 10 atomic percent of Li. The Ag based alloy exhibits high cohesion resistance, high light resistance, high heat resistance, high reflectivity, high transmissivity, low absorptivity, and high thermal conductivity of the level which had not been realized by the pure Ag or by the conventional Ag alloys. The resulting semi-reflective film and reflective film for an optical information recording medium containing the Ag based alloy exhibit excellent writing/reading properties and long term reliability. The sputtering target for an optical information recording medium is used in depositing the semi-reflective film and the reflective film. Using the semi-reflective film and/or the reflective film, an optical information recording medium is manufactured.

摘要翻译： 用于光学信息记录介质的半反射膜或反射膜以及Ag基合金溅射靶包括含有0.01至10原子％的Li的Ag基合金。 Ag基合金表现出较高的内聚力，高耐光性，高耐热性，高反射率，高透射率，低吸收率和高纯度Ag或常规Ag合金所未能达到的高导热率。 所得的用于含有Ag基合金的光学信息记录介质的半反射膜和反射膜表现出优异的书写/读取性能和长期可靠性。 用于光学信息记录介质的溅射靶用于沉积半反射膜和反射膜。 使用半反射膜和/或反射膜，制造光学信息记录介质。

公开(公告)号：US20050153162A1

公开(公告)日：2005-07-14

申请号：US10999027

申请日：2004-11-30

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Katsufumi Tomihisa ,  Yuuki Tauchi ,  Toshihiro Kugimiya

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Katsufumi Tomihisa ,  Yuuki Tauchi ,  Toshihiro Kugimiya

IPC分类号： H01J11/02 ,  B32B15/01 ,  C22C5/06 ,  C23C14/34

CPC分类号： C22C5/06 ,  C23C14/185 ,  C23C14/3414 ,  Y10T428/12896

摘要： An active matrix flat panel display includes pixels, TFTs for driving the pixels, and interconnecting lines connected to the TFTs. The interconnecting lines are formed by processing an interconnecting film of an Ag-base alloy containing 0.1 to 4.0 at % Nd and/or 0.01 to 1.5 at % Bi, and Ag as the remainder or an Ag-base alloy containing, in addition to Nd and/or Bi, one or some of elements including Cu, Au and Pd in a content in the range of 0.01 to 1.5 at %.

摘要翻译： 有源矩阵平板显示器包括像素，用于驱动像素的TFT和连接到TFT的互连线。 互连线通过加工含有0.1〜4.0at％的Nd和/或0.01〜1.5at％的Bi和Ag作为余量的Ag基合金的互连膜或除了Nd之外还含有Ag基合金 和/或Bi，包含Cu，Au和Pd中的一种或一些元素，其含量范围为0.01至1.5at％。

公开(公告)号：US07695790B2

公开(公告)日：2010-04-13

申请号：US11158079

申请日：2005-06-22

申请人： Yuuki Tauchi ,  Junichi Nakai ,  Katsutoshi Takagi

发明人： Yuuki Tauchi ,  Junichi Nakai ,  Katsutoshi Takagi

IPC分类号： B32B3/02

CPC分类号： C23C14/3414 ,  C23C14/185 ,  G11B7/00736 ,  G11B7/258 ,  G11B7/259 ,  Y10T428/21

摘要： A Ag alloy reflective film for an optical information recording medium contains Ag as a main component, and at least one selected from Nd, Sn, Gd and In in a total amount of more than 3.0 atomic percent and less than or equal to 10 atomic percent. The reflective film can further contain 0.01 to 3 atomic percent of at least one of Bi and Sb, and/or can further contain comprising 20 atomic percent or less of at least one of Mn, Cu, La and Zn. An optical information recording medium includes the Ag alloy reflective film and can be subjected to laser marking. A Ag alloy sputtering target has a similar composition to that of the Ag alloy reflective film.

摘要翻译： 用于光学信息记录介质的Ag合金反射膜包含Ag作为主要成分，并且选自Nd，Sn，Gd和In中的至少一种总量大于3.0原子％且小于或等于10原子％ 。 反射膜还可以含有0.01〜3原子％的Bi和Sb中的至少一种，和/或可以进一步含有包含20原子％以下的Mn，Cu，La和Zn中的至少一种。 光学信息记录介质包括Ag合金反射膜，并可进行激光打标。 Ag合金溅射靶具有与Ag合金反射膜相似的组成。

公开(公告)号：US20060169577A1

公开(公告)日：2006-08-03

申请号：US10564502

申请日：2004-07-14

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

IPC分类号： C23C14/00

CPC分类号： C22C5/06 ,  C22F1/14 ,  C23C14/3414

摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations

摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 <？in-line-formula description =“In-line Formulas”end =“lead”？> A1 =（D ave x100（％）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”B1 =（D＆lt; ave＆lt; /＆gt; -D＆lt; min＆gt;）/ D大于x100（％）<？in-line-formula description = 所有选定位置的粒度D中的最大值D ：粒度范围内的最小值 D在所有选定位置D ：所有选定位置的粒度D的平均值