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1.发明申请Ag-base interconnecting film for flat panel display, Ag-base sputtering target and flat panel display 审中-公开用于平板显示器的Ag基互连膜，Ag基溅射靶和平板显示器公开(公告)号：US20050153162A1
公开(公告)日：2005-07-14
申请号：US10999027
申请日：2004-11-30
CPC分类号： C22C5/06 , C23C14/185 , C23C14/3414 , Y10T428/12896
摘要： An active matrix flat panel display includes pixels, TFTs for driving the pixels, and interconnecting lines connected to the TFTs. The interconnecting lines are formed by processing an interconnecting film of an Ag-base alloy containing 0.1 to 4.0 at % Nd and/or 0.01 to 1.5 at % Bi, and Ag as the remainder or an Ag-base alloy containing, in addition to Nd and/or Bi, one or some of elements including Cu, Au and Pd in a content in the range of 0.01 to 1.5 at %.
摘要翻译： 有源矩阵平板显示器包括像素，用于驱动像素的TFT和连接到TFT的互连线。 互连线通过加工含有0.1〜4.0at％的Nd和/或0.01〜1.5at％的Bi和Ag作为余量的Ag基合金的互连膜或除了Nd之外还含有Ag基合金 和/或Bi，包含Cu，Au和Pd中的一种或一些元素，其含量范围为0.01至1.5at％。
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2.发明申请Copper alloy thin films, copper alloy sputtering targets and flat panel displays 审中-公开铜合金薄膜，铜合金溅射靶和平板显示器公开(公告)号：US20060091792A1
公开(公告)日：2006-05-04
申请号：US11235196
申请日：2005-09-27
CPC分类号： H01L23/53233 , C23C14/185 , G02F2001/136295 , H01J29/02 , H01J2211/225 , H01L27/124 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A Cu alloy thin film contains Fe and P with the balance being substantially Cu, in which the contents of Fe and P satisfy all the following conditions (1) to (3), and in which Fe2P is precipitated at grain boundaries of Cu after heat treatment at 200° C. to 500° C. for 1 to 120 minutes: 1.4NFe+8NP 1.0 (2) 12NFe+NP>0.5 (3) wherein NFe represents the content of Fe (atomic percent); and NP represents the content of P (atomic percent).
摘要翻译： Cu合金薄膜含有Fe和P，余量基本上为Cu，其中Fe和P的含量满足以下所有条件（1）至（3），其中Fe 2 P 在200℃至500℃热处理1〜120分钟后，在Cu的晶界处析出：<？在线公式描述=“在线公式”末端=“铅”→> 1.4N ＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; 3＆gt;＆lt; 1.3（1）＆lt; -formulae description =“In-line Formulas”end =“lead”？> N＆lt;＆lt;＆lt;＆lt;＆lt; P＆lt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 12N + N > 0.5（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N Fe表示Fe含量（原子百分数） ; N P表示P（原子百分比）的含量。
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公开(公告)号：US20060275618A1
公开(公告)日：2006-12-07
申请号：US11431580
申请日：2006-05-11
CPC分类号： G02F1/136286 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.
摘要翻译： 一种显示装置，其中包括具有比Al合金低的电阻率的Cu合金膜和透明导电膜的互连电极不直接连接在难熔金属薄膜上，其中Cu合金膜含有Zn和/或Mg 总量为0.1〜3.0原子％，Ni和/或Mn总量为0.1〜5原子％，可以在Cu合金膜和透明电极之间以低电阻率直接连接而不使用阻挡金属 并且在应用的情况下例如向液晶显示器提供高显示质量。
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公开(公告)号：US20060226005A1
公开(公告)日：2006-10-12
申请号：US11377266
申请日：2006-03-17
IPC分类号： C23C14/00
CPC分类号： H01J37/3429 , C23C14/3414
摘要： An Al-based sputtering target mainly containing Al has a total number of concave defects having largest depths of 0.2 μm or more and equivalent area diameters of 0.2 μm or more of 45000 or less per square millimeter of unit surface area of a surface of the sputtering target corresponding to a sputtering plane. Another Al-based sputtering target has a total number of concave defects having largest depths of 0.1 μm or more and equivalent area diameters of 0.5 μm or more of 15000 or less per square millimeter of unit surface area on the surface. These sputtering targets are reduced in time period and number of sputtering failures (a splash and/or an arc) occurring in their use, particularly at an early stage of their use.
摘要翻译： 主要含有Al的Al基溅射靶具有溅射表面的每平方毫米单位表面积的最大深度为0.2μm以上，等效面积直径为0.2μm以上45000以下的凹陷缺陷的总数 靶对应于溅射平面。 另一Al基溅射靶具有表面上每平方毫米单位表面积最大深度为0.1μm或更大，等效面积直径为0.5μm或更大为15000或更小的凹陷缺陷总数。 这些溅射靶在其使用中发生的时间和溅射失败次数（飞溅和/或电弧）减少，特别是在其使用的早期阶段。
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公开(公告)号：US07154180B2
公开(公告)日：2006-12-26
申请号：US11106439
申请日：2005-04-15
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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6.发明授权公开(公告)号：US07928575B2
公开(公告)日：2011-04-19
申请号：US12465836
申请日：2009-05-14
IPC分类号： H01L23/02
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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7.发明授权公开(公告)号：US07553754B2
公开(公告)日：2009-06-30
申请号：US11471595
申请日：2006-06-21
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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公开(公告)号：US20060237849A1
公开(公告)日：2006-10-26
申请号：US11471595
申请日：2006-06-21
IPC分类号： H01L23/48
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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公开(公告)号：US07098539B2
公开(公告)日：2006-08-29
申请号：US10737121
申请日：2003-12-17
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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10.发明申请公开(公告)号：US20050184395A1
公开(公告)日：2005-08-25
申请号：US11106439
申请日：2005-04-15
IPC分类号： G02F1/1343 , C23C14/18 , C23C14/34 , G02F1/1335 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L27/13 , H01L29/45 , H01L29/49 , H01L29/786 , H01L23/48
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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