公开(公告)号：US20220367568A1

公开(公告)日：2022-11-17

申请号：US17877714

申请日：2022-07-29

Applicant: Kioxia Corporation

Inventor： Ryu OGIWARA ,  Daisaburo TAKASHIMA ,  Takahiko IIZUKA

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: A memory device includes a memory cell and a first select transistor. The memory cell includes a variable resistance memory region, a first semiconductor layer being in contact with the variable resistance memory region, a first insulating layer being in contact with the first semiconductor layer, and a first voltage application electrode being in contact with the first insulating layer. The first select transistor includes a second semiconductor layer, a second insulating layer being in contact with the second semiconductor layer, and a second voltage application electrode extending in the second direction and being in contact with the second insulating layer.

公开(公告)号：US20210287733A1

公开(公告)日：2021-09-16

申请号：US17015408

申请日：2020-09-09

Applicant: Kioxia Corporation

Inventor： Takahiko IIZUKA ,  Daisaburo TAKASHIMA ,  Ryu OGIWARA

IPC: G11C11/4096 ,  G11C11/4094 ,  G11C11/4074 ,  G11C11/408 ,  G11C5/02 ,  G11C5/06

Abstract: According to one embodiment, a driver that sequentially supplies a first voltage, a second voltage higher than the first voltage, and the first voltage to the bit line, during the writing operation to the first memory cell. The driver supplies a third voltage to the second word line and a fourth voltage to the second selecting gate line while changing the voltage of the bit line from the second voltage to the first voltage if a data is a first data. The driver supplies a fifth voltage to the second word line and a sixth voltage to the second selecting gate line while changing the voltage of the bit line from the second voltage to the first voltage if the data is a second data. At least the sixth voltage is larger than the fourth voltage or the fifth voltage is larger than the third voltage.

公开(公告)号：US20210082959A1

公开(公告)日：2021-03-18

申请号：US17008236

申请日：2020-08-31

Applicant: KIOXIA CORPORATION

Inventor： Sumiko DOMAE ,  Daisaburo TAKASHIMA

IPC: H01L27/11597 ,  H01L27/11592 ,  H01L27/11509 ,  H01L27/11514 ,  H01L29/78 ,  H01L29/66 ,  G11C7/18 ,  G11C7/06

Abstract: A semiconductor storage device includes a stacked body and a columnar body. The stacked body includes a plurality of conductive layers spaced apart from each other in a stacking direction. The columnar body penetrates the stacked body in the stacking direction. The columnar body includes a columnar ferroelectric film, a semiconductor film disposed between the ferroelectric film and the conductive layers, and an insulating film disposed between the semiconductor film and the conductive layers.