Approaches in first order scatterometry overlay based on introduction of auxiliary electromagnetic fields

    公开(公告)号:US10197389B2

    公开(公告)日:2019-02-05

    申请号:US15305166

    申请日:2016-08-18

    Abstract: Metrology measurement methods and tools are provided, which illuminate a stationary diffractive target by a stationary illumination source, measure a signal composed of a sum of a zeroth order diffraction signal and a first order diffraction signal, repeat the measuring for a plurality of relations between the zeroth and the first diffraction signals, while maintaining the diffractive target and the illumination source stationary, and derive the first order diffraction signal from the measured sums. Illumination may be coherent and measurements may be in the pupil plane, or illumination may be incoherent and measurements may be in the field plane, in either case, partial overlapping of the zeroth and the first diffraction orders are measured. Illumination may be annular and the diffractive target may be a one cell SCOL target with periodic structures having different pitches to separate the overlap regions.

    Self-moiré target design principles for measuring unresolved device-like pitches

    公开(公告)号:US10101592B2

    公开(公告)日:2018-10-16

    申请号:US15829111

    申请日:2017-12-01

    Abstract: Metrology targets and methods are provided, which provide self-Moiré measurements of unresolved target features, i.e., interaction of electromagnetic fields re-scattered off elements within a single target layer provides signals with Moiré pitches that are measurable, although the actual target pitches are unresolved and possibly device-like. Targets comprise cell(s) with interlaced lines of elements having different device-like pitches which are selected to yield resolved Moiré pitch(es). Different target designs are presented for scatterometry and imaging metrology measurements, as well as for critical dimension, dose and focus, and pitch walk measurements—of device-like targets.

    Localized telecentricity and focus optimization for overlay metrology

    公开(公告)号:US10677588B2

    公开(公告)日:2020-06-09

    申请号:US15948941

    申请日:2018-04-09

    Abstract: An overlay metrology tool providing site-by-site alignment includes a controller coupled to a telecentric imaging system. The controller may receive two or more alignment images of an overlay target on a sample captured at two or more focal positions by the imaging system, generate alignment data indicative of an alignment of the overlay target within the imaging system based on the alignment images, set the alignment images as measurement images when the alignment of the overlay target is within selected alignment tolerances, direct the imaging system to adjust the alignment of the overlay target in the imaging system and further receive one or more measurement images from the imaging system when the alignment of the overlay target is outside the selected alignment tolerances, and determine overlay between two or more layers of the sample based on at least one of the measurement images.

    Utilizing overlay misregistration error estimations in imaging overlay metrology

    公开(公告)号:US10565697B2

    公开(公告)日:2020-02-18

    申请号:US15739381

    申请日:2017-10-22

    Abstract: Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics. Such common basis then enables any of combining various error sources to give a single number associated with measurement fidelity, analyzing various errors at wafer, lot and process levels, and/or to trade-off the resulting accuracy for throughput by reducing the number of measurements, in a controlled manner.

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