公开(公告)号：US20110223732A1

公开(公告)日：2011-09-15

申请号：US13104474

申请日：2011-05-10

申请人： Uwe Griebenow ,  Jan Hoentschel ,  Kai Frohberg ,  Heike Berthold ,  Katrin Reiche ,  Frank Feustel ,  Kerstin Ruttloff

发明人： Uwe Griebenow ,  Jan Hoentschel ,  Kai Frohberg ,  Heike Berthold ,  Katrin Reiche ,  Frank Feustel ,  Kerstin Ruttloff

IPC分类号： H01L21/8234

CPC分类号： H01L29/6656 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6653 ,  H01L29/7836

摘要： Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes.

摘要翻译： 可以基于不同的米勒电容来调整复合集成电路中相同导电类型的晶体管的不同阈值电压，这可以通过适当地适配间隔物宽度和/或执行倾斜延伸植入来实现。 因此，有效的处理策略可用于可控地调整米勒电容，从而提供低阈值晶体管的增强的晶体管性能，而不是过度复杂的工艺复杂性与常规方法相比，其中阈值电压值可以基于复数晕和 良好的兴奋剂制度。

公开(公告)号：US20090321850A1

公开(公告)日：2009-12-31

申请号：US12413765

申请日：2009-03-30

申请人： Uwe Griebenow ,  Jan Hoentschel ,  Kai Frohberg ,  Heike Berthold ,  Katrin Reiche ,  Frank Feustel ,  Kerstin Ruttloff

发明人： Uwe Griebenow ,  Jan Hoentschel ,  Kai Frohberg ,  Heike Berthold ,  Katrin Reiche ,  Frank Feustel ,  Kerstin Ruttloff

IPC分类号： H01L27/088 ,  H01L21/8236

CPC分类号： H01L21/26513 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7836

摘要： Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes.

摘要翻译： 可以基于不同的米勒电容来调整复合集成电路中相同导电类型的晶体管的不同阈值电压，这可以通过适当地适配间隔物宽度和/或执行倾斜延伸植入来实现。 因此，有效的处理策略可用于可控地调整米勒电容，从而提供低阈值晶体管的增强的晶体管性能，而不是过度复杂的工艺复杂性与常规方法相比，其中阈值电压值可以基于复数晕和 良好的兴奋剂制度。

公开(公告)号：US20110291299A1

公开(公告)日：2011-12-01

申请号：US12964448

申请日：2010-12-09

申请人： Dmytro Chumakov ,  Michael Grillberger ,  Heike Berthold ,  Katrin Reiche

发明人： Dmytro Chumakov ,  Michael Grillberger ,  Heike Berthold ,  Katrin Reiche

IPC分类号： H01L23/58 ,  H01L21/50

CPC分类号： H01L23/562 ,  H01L2224/16225 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： A stress compensation region that may be appropriately positioned on a package substrate may compensate for or at least significantly reduce the thermally induced mechanical stress in a sensitive metallization system of a semiconductor die, in particular during the critical reflow process. For example, a stressor ring may be formed so as to laterally surround the chip receiving portion of the package substrate, wherein the stressor ring may efficiently compensate for the thermally induced deformation in the chip receiving portion.

摘要翻译： 可以适当地定位在封装衬底上的应力补偿区域可以补偿或至少显着地降低半导体管芯的敏感金属化系统中的热致机械应力，特别是在临界回流工艺期间。 例如，应力环可以形成为横向围绕封装衬底的芯片接收部分，其中应力环可以有效地补偿芯片接收部分中的热诱导变形。

公开(公告)号：US08497583B2

公开(公告)日：2013-07-30

申请号：US12964448

申请日：2010-12-09

申请人： Dmytro Chumakov ,  Michael Grillberger ,  Heike Berthold ,  Katrin Reiche

发明人： Dmytro Chumakov ,  Michael Grillberger ,  Heike Berthold ,  Katrin Reiche

IPC分类号： H01L29/40

CPC分类号： H01L23/562 ,  H01L2224/16225 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： A stress compensation region that may be appropriately positioned on a package substrate may compensate for or at least significantly reduce the thermally induced mechanical stress in a sensitive metallization system of a semiconductor die, in particular during the critical reflow process. For example, a stressor ring may be formed so as to laterally surround the chip receiving portion of the package substrate, wherein the stressor ring may efficiently compensate for the thermally induced deformation in the chip receiving portion.

摘要翻译： 可以适当地定位在封装衬底上的应力补偿区域可以补偿或至少显着地降低半导体管芯的敏感金属化系统中的热致机械应力，特别是在临界回流工艺期间。 例如，应力环可以形成为横向围绕封装衬底的芯片接收部分，其中应力环可以有效地补偿芯片接收部分中的热诱导变形。