摘要:
A driving system that drives an electro-optic device including a plurality of pixel electrodes, a counter electrode, a plurality of storage capacitor elements, and an electro-optic material is provided. The driving system includes a supply circuit that selectively supplies voltage to first and second ends of capacitor elements corresponding to a first horizontal line. A switching circuit is also provided that switches, in sequence every predetermined period, each of the voltages to be supplied to the second end of the capacitor elements from a first voltage to a second voltage or from the second voltage to the first voltage. A control circuit electrically connects the second end of the first storage capacitor elements and to each other before the voltage switched by the switching circuit is supplied to the second end of at least one of the storage capacitor elements.
摘要:
Disclosed herein is a shift register including shift register unit circuits of a plurality of stages. Each of the shift register unit circuits of the plurality of stages includes a first transistor having a source and a drain to one of which a first clock signal is input and a gate to which a second clock signal obtained by substantially inverting the first clock signal is input. When the second clock signal at one of an H level and an L level is input to the gate of the first transistor, the first clock signal at the other of the H level and the L level is input to one of the source and the drain of the first transistor.
摘要:
A display allowing further miniaturization when including a plurality of display panels is obtained. This display comprises a first display panel formed on a substrate and a second display panel formed on the same substrate on a region different from that formed with the first display panel. Thus, the display can be further miniaturized as compared with that having a first display panel and a second display panel formed on different substrates.
摘要:
When a switching TFT is switched on, a data voltage on a data line is stored in a storage capacitor as a gate voltage of a driver TFT. In this state, a voltage on a pulse drive line is caused to fall. AMOS type capacity element having a second electrode connected to a reference voltage is connected to a gate of the driver TFT. The MOS type capacity element is in an ON state before a fall of the pulse drive line and becomes an OFF state during the fall, and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage changes, and the gate voltage after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among driver TFTs.
摘要:
When the orientation of liquid crystal molecules in a pixel are divided by an orientation divider, a boundary of the orientation is produced at any part of the pixel. A drain signal line (54) is formed to overlap with the boundary so that a light-shielding region in the pixel is decreased and an aperture ratio can be improved. Leakage of light caused when the orientation is disturbed can be shielded by the drain signal line (54), and contrast can be enhanced. The orientation divider can be an orientation control window (36), an orientation control slope (90) or the like.
摘要:
When a gate voltage having a rectangular-shaped pulse is supplied, the voltage of a pixel electrode is pulled down and fluctuated by a fall of the gate voltage due to a parasitic capacitor formed between a gate line and the pixel electrode, i.e. a so-called drop voltage is generated. As the drop voltage depends on a time constant of a change in the gate voltage, it can be diminished by smoothing the falling edge of the gate voltage. This is achieved by, for example, providing a current discharging transistor of a gate driver 8 with a small channel width to decrease the maximum current value. By utilizing such a gate voltage, a liquid crystal display device with a small drop voltage can be provided, even when the capacitance of the parasitic capacitor is great.
摘要:
When a selection TFT (20) and a correction TFT (22) are turned on, a data voltage of a data line is stored in a storage capacitor 28 as a gate voltage of a driving TFT (24). After turning off the selection TFT (20), a voltage of a capacitor line SC falls, thereby turning on the driving TFT (24) to supply a driving current to an organic EL element (26). The correction TFT (22) is in the ON state before the capacitor line SC falls, and is turned off in the course of the fall of the line. Consequently, the capacitance of the correction TFT (22) changes during the fall of the gate voltage, and the gradient of the gate voltage fall of the driving TFT (24) is changed, thereby setting the gate voltage after the capacitor line SC falls in accordance with variation in threshold of the driving TFT (24). Particularly by disposing the driving TFT (24) and the correction TFT (22) adjacent to each other, the two TFTs are provided with the same properties to achieve effective correction.
摘要:
When a switching TFT is switched on, a data voltage on a data line is stored in a storage capacitor as a gate voltage of a driver TFT. In this state, a voltage on a pulse drive line is caused to fall. AMOS type capacity element having a second electrode connected to a reference voltage is connected to a gate of the driver TFT. The MOS type capacity element is in an ON state before a fall of the pulse drive line and becomes an OFF state during the fall, and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage changes, and the gate voltage after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among driver TFTs.
摘要:
A transmitting sequence changing/restoring unit receives, from an ATM control unit, ATM cells stored with the transmitting target information in a segmented state. The transmitting sequence changing/restoring unit groups the cells of this cell string by fours, adds the synchronous cell to the head each group, and changes the sequence thereof. The respective cells are transferred in the changed sequence in sections ranging from the transmitting sequence changing/restoring unit of the transmitting-side ATM node to the unit of the receiving-side ATM node. Accordingly, even if the ATM cell string is intercepted by the third part in this section, this third party cannot reproduce the original transmitting target information. The transmitting sequence changing/restoring unit of the receiving-side ATM node is capable of recognizing where the groups of the received cell string are delimited based on the synchronous cells and restoring the sequence of the ATM cells within the thus recognized group, whereby the transmitting target information can be reproduced.