摘要:
Disclosed herein is a shift register including shift register unit circuits of a plurality of stages. Each of the shift register unit circuits of the plurality of stages includes a first transistor having a source and a drain to one of which a first clock signal is input and a gate to which a second clock signal obtained by substantially inverting the first clock signal is input. When the second clock signal at one of an H level and an L level is input to the gate of the first transistor, the first clock signal at the other of the H level and the L level is input to one of the source and the drain of the first transistor.
摘要:
An electro-optical device having a display region in which a plurality of pixels are arranged in a matrix includes: switching elements each corresponding to one the plurality of pixels; a first sealed wiring portion that is formed on an element substrate so as to surround at least three sides of the display region; and a second sealed wiring portion that surrounds the first sealed wiring portion.
摘要:
A method of manufacturing a semiconductor substrate (7) includes the processes of: forming an insulation film (2) on a surface of a semiconductor substrate main body (1); forming an ion shield member (3) having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer (1a, 1b); removing the ion shield member; laminating the insulation film and a support substrate (5) onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.
摘要:
Methods and systems are provided for securely preventing cracking or peeling of an insulating film in the periphery of a cutting portion of cutting short-circuit wiring by etching in a substrate, such as a liquid crystal device substrate that includes short-circuit wiring for a measure against static electricity. In particular, in the liquid crystal device substrate, cutting holes are provided by etching in a first interlayer insulating film and a second interlayer insulating film, which cover short-circuit wiring provided as electrostatic measure wiring, for cutting the short-circuit wiring. An etching stop layer made of a single crystal silicon film having resistance to etching of the second interlayer insulating film is formed in a wider range than the cutting holes between the short-circuit wiring and the buried oxide film.
摘要:
To prevent the substrate floating effect that is caused when a transistor channel region fabricated of a monocrystal silicon layer covered with an insulator is in a floating state, and to stabilize the electrical characteristics of the transistor. A channel region of a semiconductor layer includes an extension portion. The end of the extension portion is connected to a contact hole. The contact hole is in turn connected to an interconnect line. The interconnect line is configured with one end thereof connected to the contact hole and with the other end connected to a contact hole leading to a light-shielding layer.
摘要:
A display device includes: a display panel; an optical detector which includes an optical sensor formed by a thin film transistor for detecting external light and a capacitor connected between a pair of electrodes of the optical sensor; a switch which turns on or off a charging operation of the capacitor; an optical sensor controller which controls the switch to be turned on or off and measures illumination of the external light on the basis of a time period during which the switch is turned off and a voltage of the capacitor becomes a value not more than a threshold value; and a controller which controls brightness of the display panel on the basis of an output of the optical sensor controller, wherein after the optical sensor controller detects a fact that the voltage of the capacitor becomes the value not more than the threshold value, the optical sensor controller turns on the switch after a predetermined time.
摘要:
An optical detection device includes: an optical sensing unit that has an optical detection transistor and outputs a signal corresponding to the amount of light irradiated to the optical detection transistor; a threshold voltage detecting unit that has a threshold value detection transistor that is provided adjacent to the optical detection transistor and is formed in the same process as the formation process of the optical detection transistor, the threshold voltage detecting unit detecting the threshold voltage of the threshold value detection transistor; a sensor output value generating unit that generates a sensor output value that relates to the amount of irradiating light on the basis of the signal outputted from the optical sensing unit; a correction coefficient determining unit that determines a correction coefficient that is used for correcting a change in the sensor output value that is caused by the optical degradation of the optical detection transistor and corresponds to the threshold voltage detected at the threshold voltage detecting unit on the basis of a relationship between the correction coefficient and the threshold voltage, the relationship between the correction coefficient and the threshold voltage being predetermined on the basis of a correlation between a change in a sensor output value relative to the degree of the optical degradation of the optical detection transistor and a change in the threshold voltage relative to the degree of the optical degradation of the optical detection transistor; and a correction processing unit that corrects the sensor output value on the basis of the correction coefficient that has been determined at the correction coefficient determining unit.
摘要:
An electro-optical device having a display region in which a plurality of pixels are arranged in a matrix includes: switching elements each corresponding to one the plurality of pixels; a first sealed wiring portion that is formed on an element substrate so as to surround at least three sides of the display region; and a second sealed wiring portion that surrounds the first sealed wiring portion.
摘要:
A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.
摘要:
A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.