Magnetoresistance effect reproduction head
    21.
    发明授权
    Magnetoresistance effect reproduction head 失效
    磁阻效应再现头

    公开(公告)号:US5808843A

    公开(公告)日:1998-09-15

    申请号:US890170

    申请日:1992-05-29

    IPC分类号: G11B5/31 G11B5/39

    摘要: A magnetoresistance effect reproduction head which comprises a magnetoresistive layer having a central sensing region and an end domain control region and formed into a thin film of a ferromagnetic material, a hard magnetic layer overlapping with the end domain control region in direct contact therewith and formed into a thin film of a hard magnetic material, a magnetic field and a longitudinal magnetic bias field by ferromagnetic exchange coupling is generated for maintaining the central sensing region of the magnetoresistive layer in single domain state.

    摘要翻译: 一种磁阻效应再现头,包括具有中心感测区域和端畴控制区域并形成铁磁材料薄膜的磁阻层,硬磁层与与其直接接触的端畴控制区域重叠并形成 产生硬磁材料的薄膜,通过铁磁交换耦合的磁场和纵向磁偏置场,以将磁阻层的中心感测区域保持在单域状态。

    Magnetoresistive head
    22.
    发明授权
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号:US5212609A

    公开(公告)日:1993-05-18

    申请号:US792630

    申请日:1991-11-15

    IPC分类号: G11B5/39

    CPC分类号: G11B5/3903 Y10T29/49052

    摘要: A magnetoresistive head is disclosed. It comprises a lower gap film, a magnetoresistive film, a bias film, an electrode, an upper gap film, and upper shield film provided in sequence on a substrate. A protective film is provided under the upper shield film to prevent the upper gap film and electrode from the undesirable etching during patterning the upper shield film.

    摘要翻译: 公开了一种磁阻头。 它包括依次设置在基板上的下间隙膜,磁阻膜,偏置膜,电极,上间隙膜和上屏蔽膜。 在上屏蔽膜下方设置有保护膜,以防止在上屏蔽膜图案化期间上间隙膜和电极不期望的蚀刻。

    Magnetic storage apparatus
    25.
    发明授权
    Magnetic storage apparatus 有权
    磁存储装置

    公开(公告)号:US06297929B1

    公开(公告)日:2001-10-02

    申请号:US09557002

    申请日:2000-04-20

    IPC分类号: G11B5127

    摘要: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr;(&mgr;&OHgr;-cm) is the resistivity, and &mgr;is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

    摘要翻译: 所提出的磁存储装置具有以下特征。 记录数据的频率选择为45 MHz。 考虑到涡电流损耗,设计制造设备中使用的磁头的磁极的磁性膜的厚度,电阻率和相对磁导率。 此外,在d(mum)是制造磁头的磁极的磁性膜的厚度,rho(μOMEGA-cm)是电阻率的情况下,满足mud2 / rho <= 500的关系,并且mu 在低频范围内的相对磁导率。 在这些条件下,记录磁场的衰减量降低到10%以下,可以解决写入模糊和记录频率变化时的覆盖值变化的问题。 此外,媒体数据速率为每秒15兆字节,而面积数据记录密度为500兆比特每平方英寸或更多。

    Magnetic storage apparatus
    26.
    发明授权
    Magnetic storage apparatus 失效
    磁存储装置

    公开(公告)号:US6064546A

    公开(公告)日:2000-05-16

    申请号:US3506

    申请日:1998-01-06

    摘要: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of .mu.d.sup.2 /.rho..ltoreq.500 is satisfied where d (.mu.m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, .rho. (.mu..OMEGA.-cm) is the resistivity, and .mu. is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

    摘要翻译: 所提出的磁存储装置具有以下特征。 记录数据的频率选择为45 MHz。 考虑到涡电流损耗,设计制造设备中使用的磁头的磁极的磁性膜的厚度,电阻率和相对磁导率。 此外,满足μd2 / rho <500的关系,其中d(μm)是制造磁头的磁极的磁膜的厚度,rho(mu OMEGA-cm)是电阻率 ,mu是低频范围内的相对磁导率。 在这些条件下,记录磁场的衰减量降低到10%以下,可以解决写入模糊和记录频率变化时的覆盖值变化的问题。 此外,媒体数据速率为每秒15兆字节,而面积数据记录密度为500兆比特每平方英寸或更多。

    Magnetic storage apparatus
    27.
    发明授权
    Magnetic storage apparatus 有权
    磁存储装置

    公开(公告)号:US06452758B2

    公开(公告)日:2002-09-17

    申请号:US09860645

    申请日:2001-05-21

    IPC分类号: G11B5127

    摘要: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr; (&mgr;&OHgr;-cm) is the resistivity, and &mgr; is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

    摘要翻译: 所提出的磁存储装置具有以下特征。 记录数据的频率选择为45 MHz。 考虑到涡电流损耗,设计制造设备中使用的磁头的磁极的磁性膜的厚度,电阻率和相对磁导率。 此外,在d(mum)是制造磁头的磁极的磁性膜的厚度,rho(μOMEGA-cm)是电阻率的情况下,满足mud2 / rho <= 500的关系,并且mu 在低频范围内的相对磁导率。 在这些条件下,记录磁场的衰减量降低到10%以下,可以解决写入模糊和记录频率变化时的覆盖值变化的问题。 此外,媒体数据速率为每秒15兆字节,而面积数据记录密度为500兆比特每平方英寸或更多。

    Magnetoresistive device
    29.
    发明授权
    Magnetoresistive device 失效
    磁阻器件

    公开(公告)号:US4769093A

    公开(公告)日:1988-09-06

    申请号:US63773

    申请日:1987-06-24

    IPC分类号: G11B5/39 H01L43/08 H01F1/04

    CPC分类号: H01L43/08

    摘要: A magnetoresistive device includes a magnetoresistive film made of permalloy alloy. This thin film is formed on a substrate by sputtering or vapor deposition method. Thereafter, the thin film is heated to a temperature between 200.degree. C. and 350.degree. C. by flowing an electric current therethrough or irradiating the thin film with an electron or laser beam. It is desirable that the heat treatment is effected in an alternating magnetic field. The permalloy alloy may contain at least one element including Rh, Ru, Mo, Cr and V.

    摘要翻译: 磁阻器件包括由坡莫合金合金制成的磁阻膜。 该薄膜通过溅射或气相沉积法形成在基板上。 此后,通过使电流流过其中或用电子或激光束照射薄膜将薄膜加热至200℃至350℃的温度。 理想的是,在交变磁场中进行热处理。 坡莫合金可以含有至少一种包括Rh,Ru,Mo,Cr和V的元素。