High speed photothermographic materials containing tellurium compounds and methods of using same
    21.
    发明授权
    High speed photothermographic materials containing tellurium compounds and methods of using same 失效
    含碲化合物的高速光热成像材料及其使用方法

    公开(公告)号:US06699647B2

    公开(公告)日:2004-03-02

    申请号:US09975909

    申请日:2001-10-11

    IPC分类号: G03C1498

    摘要: Photothermographic imaging materials having increased photospeed are provided by certain tellurium chemical sensitizers that are added during the formulation of a photothermographic emulsion. These useful chemical sensitizers are represented by the following Structure I or II: Te(L)m(X1)n  (I) Pd(X2)2[Te(R′)2]2  (II) wherein X1 and X2 independently represent halo, OCN, SCN, S(C═S)N(Ra)(Rb), S(C═S)ORa, S(C═S)SRa, S(P═S)(ORa)(ORb)2, S(P═S)(Ra)(Rb), SeCN, TeCN, CN, SRa, ORa, N3, alkyl, aryl, or O(C═O)Ra groups, Ra and Rb are an alkyl, alkenyl, cycloalkyl, heterocycyl, or aryl group, or Ra and Rb taken together can form a 5-, 6- or 7-membered heterocyclic ring, L is a ligand derived from a neutral Lewis base, R′ is an alkyl or aryl group, m is 0, 1, 2, or 4, and n is 2 or 4 provided that when m is 0 or 2, n is 2 or 4, and when m is 1 or 4, n is 2, and further provided that multiple X1, X2, L, Ra, Rb, or R′ groups in the molecule can be the same or different groups.

    摘要翻译: 具有增加的感光速度的光热成像材料由在光热敏成像乳剂的配制过程中加入的某些碲化学增感剂提供。 这些有用的化学增感剂由以下结构I或II表示:其中X 1和X 2独立地表示卤素,OCN,SCN,S(C = S)N(Ra)(Rb),S(C = S(S = S)SRa,S(P = S)(ORa)(ORb)2,S(P = S)(Ra)(Rb),SeCN,TeCN,CN,SRa,ORa,N3 ,烷基,芳基或O(C = O)R a基团,R a和R b是烷基,烯基,环烷基,杂环基或芳基,或者R a和R b可以一起形成5-,6-或7-元 杂环,L为衍生自中性路易斯碱的配体,R'为烷基或芳基,m为0,1,2或4,n为2或4,条件是当m为0或2时,n 是2或4,当m是1或4时,n是2,并且进一步地,分子中多个X 1,X 2,L,R a,R b或R'基团可以相同或 不同群体。

    Tellurium (IV) compounds and compositions
    22.
    发明授权
    Tellurium (IV) compounds and compositions 失效
    碲(Ⅳ)化合物和组合物

    公开(公告)号:US4355097A

    公开(公告)日:1982-10-19

    申请号:US181324

    申请日:1980-08-25

    摘要: Disclosed are tellurium (IV) compounds represented by the formula: ##STR1## wherein: D is a Lewis base function containing a group VA or VIA donor atom;Q represents the atoms necessary to complete a 5- or 6-membered ring, when taken together with C, D and Te, when m is 1 and represents the atoms linking C and D when m is greater than 1;R.sub.1 and R.sub.2 are independently selected from the group consisting of hydrogen, alkyl and aryl;X is an anion;n is 1 or 2; andm is an integer from 1 to 500.These compounds are useful in an image-forming combination comprising the described Te(IV) compound and a reducing agent. The image-forming combination is useful in a variety of materials, including a dry amplification element.

    摘要翻译: 公开了由下式表示的碲(IV)化合物:其中:D是含有VA或VIA族供体原子的路易斯碱官能团; 当m为1时,Q表示与C,D和Te一起形成5-或6-元环所必需的原子,当m大于1时,表示连接C和D的原子; R1和R2独立地选自氢,烷基和芳基; X是阴离子; n为1或2; 并且m为1至500的整数。这些化合物可用于包含所述Te(IV)化合物和还原剂的成像组合。 图像形成组合可用于各种材料,包括干放大元件。

    Tellurium(II) compounds and complexes having organic moieties containing
silicon
    23.
    发明授权
    Tellurium(II) compounds and complexes having organic moieties containing silicon 失效
    碲(II)化合物和具有含硅有机部分的络合物

    公开(公告)号:US4287354A

    公开(公告)日:1981-09-01

    申请号:US198690

    申请日:1980-10-20

    申请人: Henry J. Gysling

    发明人: Henry J. Gysling

    IPC分类号: C07F7/08 C07F15/00 G03C1/73

    摘要: Nonpolar, organic solvent-soluble tellurium compounds and complexes are disclosed. The compounds are tellurium(II) compounds and are represented by the formula:Te[ (CH.sub.2).sub.n SiRR'R"].sub.2wherein:n is an integer from 1 to 10 andR, R' and R" are independently selected from the group consisting of alkyl, aryl and heterocyclic radicals. Photosensitive complexes of these compounds with transition metals, as well as photographic elements having layers comprising these complexes, are also disclosed.

    摘要翻译: 公开了非极性有机溶剂可溶性碲化合物和络合物。 化合物是碲(II)化合物,并由下式表示:Te [(CH2)nSiRR'R“] 2其中:n是1至10的整数,R,R'和R”独立地选自 由烷基,芳基和杂环基组成的组。 还公开了这些化合物与过渡金属的光敏复合物,以及具有包含这些络合物的层的照相元件。

    Tellurium(II) compounds and complexes having organic moieties containing
silicon containing compositions, articles and photoimaging processes
    24.
    发明授权
    Tellurium(II) compounds and complexes having organic moieties containing silicon containing compositions, articles and photoimaging processes 失效
    碲(II)化合物和具有含硅组合物的有机部分的复合物,制品和光成像方法

    公开(公告)号:US4258128A

    公开(公告)日:1981-03-24

    申请号:US965712

    申请日:1978-12-01

    申请人: Henry J. Gysling

    发明人: Henry J. Gysling

    摘要: Nonpolar, organic solvent-soluble tellurium compounds and complexes are disclosed. The compounds are tellurium(II) compounds and are represented by the formula:Te----CH.sub.2).sub.n SiRR'R"].sub.2wherein:n is an integer from 1 to 10 andR, R' and R" are independently selected from the group consisting of alkyl, aryl and neterocyclic radicals. Photosensitive complexes of these compounds with transition metals, as well as photographic elements having layers comprising these complexes, are also disclosed.

    摘要翻译: 公开了非极性有机溶剂可溶性碲化合物和络合物。 化合物是碲(II)化合物,并由下式表示:Te-CH2)nSiRR'R“] 2其中:n是1至10的整数,R,R'和R”独立地选自 由烷基,芳基和杂环基组成的组。 还公开了这些化合物与过渡金属的光敏复合物,以及具有包含这些络合物的层的照相元件。

    Process for preparing tellurium(II) materials
    26.
    发明授权
    Process for preparing tellurium(II) materials 失效
    制备碲(II)材料的方法

    公开(公告)号:US4187240A

    公开(公告)日:1980-02-05

    申请号:US937286

    申请日:1978-08-28

    摘要: A Te(II) complex represented by the formula: RTeM(R').sub.3 wherein M is lead, tin, germanium or silicon; R and R' are alkyl or aryl is useful in an imaging material to provide a non-silver image. The imaging material can be a photographic material, especially a heat-developable photographic material containing, for example, a photosensitive metal salt other than the Te(II) material or other sources of developable nuclei.

    摘要翻译: 由式RTeM(R')3表示的Te(II)络合物,其中M为铅,锡,锗或硅; R和R'是烷基或芳基可用于成像材料以提供非银图像。 成像材料可以是照相材料,特别是含有例如除Te(II)材料之外的光敏金属盐或其它可显影核源的热显影照相材料。

    Electrically activated charge sensitive recording material and process
    27.
    发明授权
    Electrically activated charge sensitive recording material and process 失效
    电激活电荷敏感记录材料及工艺

    公开(公告)号:US4155760A

    公开(公告)日:1979-05-22

    申请号:US918863

    申请日:1978-06-26

    摘要: A non-silver, charge-sensitive recording composite element having an ohmic resistivity of at least about 1.times.10.sup.10 ohm-cm comprising (a) a first electrically conducting layer in association with (b) a photoconductor layer, (c) a non-silver, electrically activated recording layer comprising an image-forming combination of (i) a certain tellurium (II) coordination complex with (ii) a reducing agent, and a binder and (d) a second electrical conducting layer can provide a non-silver image having a density equal to silver images. Silica, especially colloidal silica, is also very useful in the recording layer. The recording element can be room light handleable and can provide a developed image by dry development processes.

    摘要翻译: 包括(a)与(b)感光体层相关联的第一导电层的非银电荷敏感记录复合元件,(c)非银,电荷敏感的非银电荷敏感记录复合元件,其具有至少约1×10 10欧姆 - 包含(i)某种碲(II)配位络合物与(ii)还原剂和粘合剂以及(d)第二导电层)的成像组合的电活化记录层可以提供具有 密度等于银色图像。 二氧化硅,特别是胶体二氧化硅,在记录层中也是非常有用的。 记录元件可以是室内光线可处理的,并且可以通过干式开发过程提供显影图像。

    Thermographic imaging elements and processes for their use

    公开(公告)号:US06509296B1

    公开(公告)日:2003-01-21

    申请号:US09536181

    申请日:2000-03-27

    IPC分类号: B41M530

    CPC分类号: B41M5/32 B41M5/30

    摘要: A thermally imageable element can be imaged using heat alone without the need for photosensitivity or post-imaging processing. The element contains image-forming chemistry that comprises i) image precursor chemistry and ii) a catalyst or a catalyst precursor that upon imagewise heating is capable of promoting thermally induced image formation with the image precursor chemistry. The image-forming chemistry i) and ii) components are in reactive association and uniformly dispersed or dissolved within a binder in one or more layers of the element. Thus, the element is capable of being thermally addressed to provide a visible image as a result of thermally induced catalytic transformation of the image-forming chemistry.

    Chemical vapor deposition of metal oxide films
    29.
    发明授权
    Chemical vapor deposition of metal oxide films 失效
    金属氧化物膜的化学气相沉积

    公开(公告)号:US5266355A

    公开(公告)日:1993-11-30

    申请号:US970629

    申请日:1992-11-03

    IPC分类号: C23C16/40 C30B25/02 C23C16/00

    摘要: Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor containing metal M' ions and metal M" ions, where metal M' is Li, Na, K, Ba, Mg, Ca, Sr, or Pb, and metal M" is V, Nb, Ta, or Ti, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide.

    摘要翻译: 通过蒸发含有金属M'和金属M“离子的单一源前体,通过化学气相沉积将薄的均匀的复合金属氧化物膜沉积在基底上,其中金属M'是Li,Na,K,Ba,Mg, Ca,Sr或Pb,金属M“是V,Nb,Ta或Ti,并且在足够高的温度下将蒸气与基底接触以分解前体并形成M'M”金属氧化物。