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70 条记录 (耗时 0.019 秒)

    Method for fabricating a semiconductor device with bipolar transistor
    21.
    发明授权
    Method for fabricating a semiconductor device with bipolar transistor 失效
    用双极晶体管制造半导体器件的方法

    公开(公告)号：US5843828A

    公开(公告)日：1998-12-01

    申请号：US593416

    申请日：1996-01-29

    申请人： Yasushi Kinoshita

    发明人： Yasushi Kinoshita

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/423 ,  H01L29/732 ,  H01L21/326

    CPC分类号： H01L29/66272 ,  H01L29/42304 ,  H01L29/732

    摘要： A semiconductor device with a bipolar transistor that enables to realize a reliable, electric connection of an intrinsic base region with a base electrode is provided. A semiconductor substructure has a surface area. An intrinsic base region is formed in the surface area. An emitter region is formed in the surface area to be surounded by the intrinsic base region, and an emitter electrode is formed to be contacted with the emitter region. An insulator is formed to surround the emitter electrode. A base electrode is formed not to be contacted with the intrinsic base region A conductive region is formed to be contacted with the intrinsic base region and the base electrode. The substructure has a recess formed on the surface area. The conductive region is produced by supplying a conductive material to the recess to be contacted with the intrinsic base region and the base electrode. The intrinsic base region is electrically connected to the base electrode through the conductive region. The recess is preferably produced by oxidizing a part of the surface area to form an oxide and removing the oxide.

    摘要翻译： 提供一种具有双极晶体管的半导体器件，其能够实现本征基极区域与基极的可靠的电连接。 半导体子结构具有表面积。 在表面积中形成本征基区。 在由本征基区域包围的表面区域中形成发射极区域，并且形成发射极电极以与发射极区域接触。 形成绝缘体以包围发射极电极。 基底电极形成为不与本征基极区域接触形成与本征基极区域和基极电极接触的导电区域。 该子结构具有形成在表面区域上的凹部。 通过向与本征基极区域和基极电极接触的凹部供给导电材料来制造导电区域。 本征基极区域通过导电区域与基极电连接。 该凹部优选通过氧化一部分表面积而形成氧化物并除去氧化物而制成。

    Method of manufacturing a complementary bipolar transistor
    22.
    发明授权
    Method of manufacturing a complementary bipolar transistor 失效
    制造互补双极晶体管的方法

    公开(公告)号：US5411898A

    公开(公告)日：1995-05-02

    申请号：US19898

    申请日：1993-02-19

    申请人： Yasushi Kinoshita ,  Kazuhito Niwano

    发明人： Yasushi Kinoshita ,  Kazuhito Niwano

    IPC分类号： H01L21/74 ,  H01L21/762 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/06 ,  H01L21/265

    CPC分类号： H01L21/82285 ,  H01L21/74 ,  H01L21/76229 ,  H01L21/76232 ,  H01L27/0826 ,  H01L29/0615 ,  Y10S148/01

    摘要： An n type buried layer (2b) lying in the lower part of a PNP transistor (101a) is lower in impurity concentration than an n.sup.+ type buried layer (2a) lying in the lower part of an NPN transistor (100). A p.sup.+ type buried layer (4a) is formed thick on the n type buried layer (2b) and insulated from the n.sup.+ type buried layer (2a) by an isolation trench (7). A breakdown voltage at a junction of the p.sup.+ type buried layer (4a) and the n type buried layer (2b) can be improved and, accordingly, the breakdown voltage of the whole device being improved. Low-controlled collector resistance of the PNP transistor (101a) prevents an amplification factor from decreasing.

    摘要翻译： 位于PNP晶体管（101a）的下部的n型掩埋层（2b）的杂质浓度低于位于NPN晶体管（100）的下部的n +型掩埋层（2a）。 在n型掩埋层（2b）上形成p +型掩埋层（4a），并通过隔离沟槽（7）与n +型掩埋层（2a）绝缘。 可以提高p +型掩埋层（4a）和n型掩埋层（2b）的结的击穿电压，从而提高整个器件的击穿电压。 PNP晶体管（101a）的低控制集电极电阻防止放大系数降低。

    Optical pickup having thermal expansion compensation
    24.
    发明授权
    Optical pickup having thermal expansion compensation 失效
    具有热膨胀补偿的光学拾取器

    公开(公告)号：US08087038B2

    公开(公告)日：2011-12-27

    申请号：US11668034

    申请日：2007-01-29

    申请人： Yasushi Kinoshita ,  Seiichi Katou ,  Katsuhiko Kimura ,  Seiji Ono ,  Naomitsu Kuroda ,  Hidenao Saito

    发明人： Yasushi Kinoshita ,  Seiichi Katou ,  Katsuhiko Kimura ,  Seiji Ono ,  Naomitsu Kuroda ,  Hidenao Saito

    IPC分类号： G11B7/135

    CPC分类号： G11B7/13925 ,  G11B7/1378 ,  G11B7/13922 ,  G11B7/13927 ,  G11B2007/0006 ,  G11B2007/13727

    摘要： An aspect of the invention provides an optical pickup in which an optical axis is not displaced even if ambient temperature is changed. The optical pickup of the invention has an optical unit and an optical pickup case. The optical unit has a lens member having an optical axis, and the optical axis of the lens member is offset to one side from the center of the optical unit. The optical pickup case holds the optical unit from both sides. A thermal expansion amount of the optical unit is absorbed by compression amounts of a first adhesive and a second adhesive such that the optical axis of the lens member is not displaced when the optical unit is thermal expanded.

    摘要翻译： 本发明的一个方面提供了一种光学拾取器，其中光轴即使环境温度改变也不会移动。 本发明的光拾取器具有光学单元和光拾取盒。 光学单元具有具有光轴的透镜构件，透镜构件的光轴偏离光学单元的中心一侧。 光拾取器盒从两侧保持光学单元。 光学单元的热膨胀量被第一粘合剂和第二粘合剂的压缩量吸收，使得当光学单元热膨胀时透镜构件的光轴不移位。

    OPTICAL PICKUP
    25.
    发明申请
    OPTICAL PICKUP 失效

    公开(公告)号：US20080189726A1

    公开(公告)日：2008-08-07

    申请号：US11668034

    申请日：2007-01-29

    申请人： Yasushi Kinoshita ,  Seiichi Katou ,  Katsuhiko Kimura ,  Seiji Ono ,  Naomitsu Kuroda ,  Hidenao Saito

    发明人： Yasushi Kinoshita ,  Seiichi Katou ,  Katsuhiko Kimura ,  Seiji Ono ,  Naomitsu Kuroda ,  Hidenao Saito

    IPC分类号： G11B7/00

    CPC分类号： G11B7/13925 ,  G11B7/1378 ,  G11B7/13922 ,  G11B7/13927 ,  G11B2007/0006 ,  G11B2007/13727

    摘要： An aspect of the invention provides an optical pickup in which an optical axis is not displaced even if ambient temperature is changed. The optical pickup of the invention has an optical unit and an optical pickup case. The optical unit has a lens member having an optical axis, and the optical axis of the lens member is offset to one side from the center of the optical unit. The optical pickup case holds the optical unit from both sides. A thermal expansion amount of the optical unit is absorbed by compression amounts of a first adhesive and a second adhesive such that the optical axis of the lens member is not displaced when the optical unit is thermal expanded.

    摘要翻译： 本发明的一个方面提供了一种光学拾取器，其中光轴即使环境温度改变也不会移动。 本发明的光拾取器具有光学单元和光拾取盒。 光学单元具有具有光轴的透镜构件，透镜构件的光轴偏离光学单元的中心一侧。 光拾取器盒从两侧保持光学单元。 光学单元的热膨胀量被第一粘合剂和第二粘合剂的压缩量吸收，使得当光学单元热膨胀时透镜构件的光轴不移位。

    LSI test socket for BGA
    26.
    发明申请
    LSI test socket for BGA 失效
    用于BGA的LSI测试插座

    公开(公告)号：US20070018667A1

    公开(公告)日：2007-01-25

    申请号：US11527538

    申请日：2006-09-27

    申请人： Yasushi Kinoshita

    发明人： Yasushi Kinoshita

    IPC分类号： G01R31/02

    CPC分类号： G01R1/0466 ,  G01R1/0483 ,  G01R1/06722

    摘要： There is provided an LSI socket containing a pogo-pin type decoupling capacitor for reducing the potential fluctuation of power supplies and GNDs at the time of testing LSI incorporated in a BGA package. The LSI socket comprises a printed board 102 containing decoupling capacitors 113 corresponding to one or more power supply voltages inside thereof, a pogo-pin supporting casing portion 104 on which the printed board 102 is overlapped into a single piece, and pogo-pins 103 inserted into penetrating holes in which hole positions of through holes 109 drilled in the printed board 102 and casing holes 114 drilled in the pogo-pin supporting casing portion 104 are allowed to be matched, wherein the printed board 102 is disposed on the upper surface side of the pogo-pin supporting casing portion 104 which faces the BGA package, or disposed on the lower surface side of the pogo-pin supporting casing portion 104, at the time of testing the LSI incorporated in the BGA package.

    摘要翻译： 提供了一种LSI插座，其包含用于在测试包含在BGA封装中的LSI时降低电源和GND的电位波动的pogo-pin型去耦电容器。 LSI插座包括：印刷电路板102，其包含对应于其内部的一个或多个电源电压的去耦电容器113;印刷电路板102重叠成单件的弹簧销支撑壳体部分104和插入的弹簧销103 能够匹配在印刷基板102上钻孔的贯通孔109的孔位置和在弹簧销支撑壳体部分104中钻出的壳体孔114的贯通孔，其中印刷基板102配置在 在测试包含在BGA封装中的LSI时，面向BGA封装的pogo-pin支撑壳体部分104或者布置在pogo-pin支撑壳体部分104的下表面侧上。

    Semiconductor device with high-speed switching circuit implemented by MIS transistors and process for fabrication thereof
    29.
    发明授权
    Semiconductor device with high-speed switching circuit implemented by MIS transistors and process for fabrication thereof 失效
    具有由MIS晶体管实现的高速开关电路的半导体器件及其制造方法

    公开(公告)号：US06531746B2

    公开(公告)日：2003-03-11

    申请号：US09725271

    申请日：2000-11-29

    申请人： Yasushi Kinoshita

    发明人： Yasushi Kinoshita

    IPC分类号： H01L2972

    CPC分类号： H01L27/0629

    摘要： An n-channel type MIS field effect transistor is fabricated on a p-type well defined in a standard p-type silicon substrate, and is expected to respond to a high-frequency signal, wherein a heavily-doped p-type well contact region is formed outside of the p-type well for increasing the substrate resistance, and a capacitor is coupled to the heavily-doped p-type well contact region for increasing the impedance so that the insertion loss is reduced by virtue of the large impedance of the silicon substrate.

    摘要翻译： n沟道型MIS场效应晶体管制造在标准p型硅衬底中限定的p型阱上，并且预期对高频信号做出响应，其中重掺杂p型阱接触区域 形成在p型阱的外部以增加衬底电阻，并且电容器耦合到重掺杂的p型阱接触区域，以增加阻抗，从而借助于阻抗的大阻抗来减小插入损耗 硅衬底。

    Ion flow recording apparatus and liquid developing method
    30.
    发明授权
    Ion flow recording apparatus and liquid developing method 失效
    离子流记录装置和液体显影方法

    公开(公告)号：US6069641A

    公开(公告)日：2000-05-30

    申请号：US27220

    申请日：1998-02-20

    申请人： Junichi Matsuno ,  Shogo Matsumoto ,  Taisaku Seino ,  Yasushi Kinoshita ,  Akira Mori ,  Keiji Kamio ,  Akira Sasaki ,  Mitsuo Suzuki ,  Tetsuro Akasaki ,  Shigetaka Furukawa

    发明人： Junichi Matsuno ,  Shogo Matsumoto ,  Taisaku Seino ,  Yasushi Kinoshita ,  Akira Mori ,  Keiji Kamio ,  Akira Sasaki ,  Mitsuo Suzuki ,  Tetsuro Akasaki ,  Shigetaka Furukawa

    IPC分类号： G03G15/01 ,  G03G15/10 ,  B41J2/385

    CPC分类号： G03G15/101 ,  G03G15/0121 ,  G03G15/0142 ,  G03G15/0184 ,  G03G2215/0187

    摘要： An ion flow recording apparatus performs recording making density modulation every pixel. When developing on a fine grain toner is to be performed using a liquid developer for an electrostatic latent image, a developing unit (developing roller) is disposed to face a direction of gravity. Namely, a control valve is provided on a pipe for application of a developer to the developing roller or on a joint portion between the pipe and a developer tank, developing units of different two colors are joined to their developer tank portions, and a rotary shaft is provided on the joint portion to be positioned at a point of symmetry to provide alternate use of the two developing units upon turning them. Therefore, developing for a plurality of colors can be simply performed, and such turning of the developing units enables prevention of the toner from deposition in the liquid developer during developing, thereby making it possible to perform a clear recording.

    摘要翻译： 离子流记录装置执行每个像素进行密度调制的记录。 当使用用于静电潜像的液体显影剂在细颗粒调色剂上显影时，将显影单元（显影辊）设置为面对重力方向。 也就是说，控制阀设置在用于将显影剂施加到显影辊或管和显影剂罐之间的接合部分的管上，不同的两种颜色的显影单元接合到它们的显影剂罐部分，并且旋转轴 设置在接合部分上以定位在对称点处，以在转动它们时提供两个显影单元的替代使用。 因此，可以简单地进行多种颜色的显影，并且显影单元的这种转动能够防止调色剂在显影期间在液体显影剂中沉积，从而可以进行清晰的记录。