公开(公告)号：US20050082007A1

公开(公告)日：2005-04-21

申请号：US10689783

申请日：2003-10-21

Applicant: Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

Inventor： Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/44

CPC classification number: H01L21/68707 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/68735

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract translation: 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或 邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底 支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。

公开(公告)号：US07879151B2

公开(公告)日：2011-02-01

申请号：US11530676

申请日：2006-09-11

Applicant: Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred W. Mak

Inventor： Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred W. Mak

IPC: C23C16/00 ,  C23C16/458 ,  H01L21/306

CPC classification number: H01L21/68707 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/68735

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract translation: 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个 第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件 设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。

公开(公告)号：US20090102551A1

公开(公告)日：2009-04-23

申请号：US12173703

申请日：2008-07-15

Applicant: Abhishek Bandyopadhyay ,  Khiem Nguyen

Inventor： Abhishek Bandyopadhyay ,  Khiem Nguyen

IPC: H03F1/14 ,  H03F3/45

CPC classification number: H03F3/45475 ,  H03F3/3022 ,  H03F3/45183 ,  H03F2200/135 ,  H03F2200/513 ,  H03F2203/30033 ,  H03F2203/45726

Abstract: A low-power, low-voltage feedback class AB operational amplifier is disclosed. The minimum supply voltage is one gate-source voltage and two saturation voltages. Currents on the output p-type and n-type transistors are monitored as part of the feedback loop control. Accurate monitoring is achieved by connecting current monitors directly to the corresponding voltage rail. Additional output stages may be selectively connected to the primary output stage to dynamically adjust to changes source conditions. Thus by connecting the appropriate number and type of additional output stages, continuous time adaptive power supply compensation is achieved. Both single ended and differential topologies are described.

Abstract translation: 公开了一种低功率，低电压反馈级AB运算放大器。 最小电源电压为一个栅源电压和两个饱和电压。 作为反馈回路控制的一部分，监视输出p型和n型晶体管上的电流。 通过将电流监视器直接连接到相应的电压轨来实现精确的监控。 另外的输出级可以选择性地连接到主输出级，以动态调整以改变源条件。 因此，通过连接适当数量和类型的附加输出级，实现连续时间自适应电源补偿。 描述了单端和差分拓扑。

公开(公告)号：US20070023393A1

公开(公告)日：2007-02-01

申请号：US11531467

申请日：2006-09-13

Applicant: Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

Inventor： Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

IPC: G01L21/30 ,  C23F1/00

CPC classification number: G03F1/80 ,  H01J37/321 ,  H01J37/32935

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

Abstract translation: 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

公开(公告)号：US20070012660A1

公开(公告)日：2007-01-18

申请号：US11532195

申请日：2006-09-15

Applicant: Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

Inventor： Richard Lewington ,  Corey Collard ,  Scott Anderson ,  Khiem Nguyen

IPC: G01L21/30 ,  H01L21/306

CPC classification number: G03F1/30 ,  H01L21/31116 ,  H01L21/67742

Abstract: The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.

Abstract translation: 本发明的实施例涉及一种用于测量半导体光掩模处理系统中的蚀刻深度的方法和装置。 在一个实施例中，用于蚀刻衬底的方法包括在与处理系统的真空传送室耦合的蚀刻室中蚀刻透明衬底，将透明衬底转移到耦合到处理系统的测量单元，以及测量至少一个 蚀刻深度或临界尺寸，使用测量单元中的测量工具。

公开(公告)号：US20050133158A1

公开(公告)日：2005-06-23

申请号：US10741588

申请日：2003-12-19

Applicant: Khiem Nguyen ,  Alfred Mak

Inventor： Khiem Nguyen ,  Alfred Mak

IPC: H01L21/677 ,  H01L21/687 ,  C23F1/00

CPC classification number: H01L21/67742 ,  H01L21/68707

Abstract: Method and apparatus for supporting a substrate in a semiconductor substrate processing system are provided. A substrate is supported on two substrate support each having an inclined surface for receiving a portion of the substrate while minimizing contact with the substrate and guides for centering the substrate on the inclined surface. In one aspect, the two substrate supports are position facing each other on a ring disposed in a loadlock chamber with the substrate supported therebetween. Multiple sets of the substrate supports may be used to hold multiple substrates at a time in the loadlock chamber.

Abstract translation: 提供了一种用于在半导体衬底处理系统中支撑衬底的方法和装置。 基板被支撑在两个基板支撑件上，每个基板支撑件具有用于接收基板的一部分的倾斜表面，同时最小化与基板的接触和用于使基板定位在倾斜表面上的导向件。 在一个方面，两个基板支撑件位于设置在负载锁定室中的环上彼此面对的位置，其中基板被支撑在它们之间。 多组衬底支撑件可以用于在负载锁定室中一次保持多个衬底。