公开(公告)号：US20200259047A1

公开(公告)日：2020-08-13

申请号：US16838299

申请日：2020-04-02

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. OOI ,  Aditya PRABASWARA ,  Bilal JANJUA ,  Tien Khee NG

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/42 ,  H01L33/40 ,  H01L33/16

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

公开(公告)号：US20190145587A1

公开(公告)日：2019-05-16

申请号：US16098575

申请日：2017-04-27

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ibrahim DURSUN ,  Chao SHEN ,  Osman M. BAKR ,  Tien Khee NG ,  Boon OOI

IPC: F21K9/64 ,  C09K11/66 ,  C09K11/88 ,  C09K11/02 ,  H04B10/116

Abstract: Embodiments of the present disclosure provide devices and systems including a material including a halide perovskite and/or phosphor to produce and/or communicate using visible light, and the like.

公开(公告)号：US20180062766A1

公开(公告)日：2018-03-01

申请号：US15679898

申请日：2017-08-17

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. OOI ,  Bilal JANJUA ,  Chao SHEN ,  Hassan M. OUBEI ,  Tien Khee NG

IPC: H04B13/02 ,  H04B10/80 ,  H04L27/26 ,  H04B10/564 ,  H01S5/00

CPC classification number: H04B13/02 ,  H01S5/0071 ,  H04B10/116 ,  H04B10/564 ,  H04B10/80 ,  H04B10/807 ,  H04L27/2698

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.

公开(公告)号：US20230047142A1

公开(公告)日：2023-02-16

申请号：US17792280

申请日：2021-01-06

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon S. OOI ,  Omar ALKHAZRAGI ,  Tien Khee NG

IPC: H04B10/116 ,  H04B10/61 ,  H04B10/2519

Abstract: A visible-light communication and illumination array includes a substrate and plural surface-emitting superluminescent diodes, SLDs, distributed across the substrate. A first set of SLDs of the plural SLDs generates a first light beam having substantially a first wavelength, a second set of SLDs of the plural SLDs generates a second light beam having substantially a second wavelength, and a third set of SLDs of the plural SLDs generates a third light beam having substantially a third wavelength. The array further includes a controller configured to encode at least one of the first light beam, the second light beam and the third light beam to transmit information. A combination of the first light beam, the second light beam and the third light beam produces white light.

公开(公告)号：US20220077933A1

公开(公告)日：2022-03-10

申请号：US17423233

申请日：2020-02-19

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon Siew OOI ,  Chun Hong KANG ,  Tien Khee NG ,  Osman M. BAKR

IPC: H04B10/291 ,  H04B10/116 ,  H04B10/294

Abstract: A plastic optical fiber communication system includes a light source that emits a first signal having a first wavelength in a visible light spectrum, the first signal being encoded with information at a high data-rate of 0.1 to 10 Gbit/s; a pump laser system that emits a pump laser light having a second wavelength, different from the first wavelength; a perovskite-doped optical fiber excited by the pump laser light to generate an amplified spontaneous emission spectrum that encompasses the first wavelength so as to receive and amplify the first signal for generating an amplified output signal having the first wavelength; and a photodetector optically coupled to the perovskite-doped optical fiber, and configured to receive the amplified output signal at the high data-rate of 0.1 to 10 Gbit/s. The amplified output signal is encoded with the information.

公开(公告)号：US20220029384A1

公开(公告)日：2022-01-27

申请号：US17281705

申请日：2019-09-25

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY ,  KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

Inventor： Mohammed Zahed Mustafa KHAN ,  Md Hosne Mobarok SHAMIM ,  Tien Khee NG ,  Boon Siew OOI

IPC: H01S5/10 ,  G02F1/35 ,  H01S5/343 ,  H01S5/00

Abstract: A tunable laser system includes a laser diode producing a light beam having a plurality of frequencies in a visible portion of a light spectrum. A collimating lens arranged in front of the laser diode produces a collimated light beam from the light beam produced by the laser diode. A partial reflector arranged in a path of the collimated laser beam reflects a first portion of the collimated light beam and passes a second portion of the collimated light beam as an output light beam. The first portion of the collimated light beam enters the laser diode and mixes with the plurality of frequencies of the light beam produced by the laser diode so that the laser diode produces a self-injection-locked light beam including at least two frequencies having a frequency difference in a terahertz frequency range. A translational stage adjusts a distance between the laser diode and the partial reflector. The laser diode or the partial reflector is mounted on the translational stage. The at least two frequencies of the self-injection-locked light beam are based on the distance between the laser diode and the partial reflector.

公开(公告)号：US20210247029A1

公开(公告)日：2021-08-12

申请号：US17245896

申请日：2021-04-30

Applicant: King Abdullah University of Science and Technology

Inventor： Boon S. OOI ,  Bilal JANJUA ,  Chao SHEN ,  Chao ZHAO ,  Tien Khee NG

IPC: F21K9/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H04B10/116

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications

公开(公告)号：US20200332968A1

公开(公告)日：2020-10-22

申请号：US16891621

申请日：2020-06-03

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ibrahim DURSUN ,  Chao SHEN ,  Osman M. BAKR ,  Tien Khee NG ,  Boon OOI

IPC: F21K9/64 ,  C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  H05B33/14 ,  H04B10/116

Abstract: Embodiments of the present disclosure provide devices and systems including a halide perovskite and/or phosphor to produce and/or communicate using visible light, and the like.

公开(公告)号：US20200328079A1

公开(公告)日：2020-10-15

申请号：US16090758

申请日：2017-05-09

Applicant: King Abdullah University of Science and Technology ,  KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY

Inventor： Chao ZHAO ,  Tien Khee NG ,  Lain-Jong LI ,  Boon Siew OOI ,  Ahmed Y. ALYAMENI ,  Munir M. ELDESOUKI

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/06

Abstract: Methods of direct growth of high quality group III-V and group III-N based materials and semiconductor device structures in the form of nanowires, planar thin film, and nanowires-based devices on metal substrates are presented. The present compound semiconductor all-metal scheme greatly simplifies the fabrication process of high power light emitters overcoming limited thermal and electrical conductivity of nanowires grown on silicon substrates and metal thin film in prior art. In an embodiment the methods include: (i) providing a metal substrate; (ii) forming a transition metal dichalcogenide (TMDC) layer on a surface of the metal substrate; and (iii) growing a semiconductor epilayer on the transition metal dichalcogenide layer using a semiconductor epitaxy growth system. In an embodiment, the semiconductor device structures can be compound semiconductors in contact with a layer of metal dichalcogenide, wherein the layer of metal dichalcogenide is in contact with a metal substrate.

公开(公告)号：US20200295529A1

公开(公告)日：2020-09-17

申请号：US16464186

申请日：2017-11-28

Applicant: King Abdullah University of Science and Technology

Inventor： Boon Siew OOI ,  Chao SHEN ,  Tien Khee NG

IPC: H01S5/026 ,  H01S5/50 ,  H01S5/042 ,  H01S5/343 ,  H01S5/22 ,  H01S5/20

Abstract: An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.