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公开(公告)号：US20230314731A1
公开(公告)日：2023-10-05
申请号：US18022773
申请日：2021-09-10
Inventor： Boon S. OOI , Omar ALKHAZRAGI , Abderrahmen TRICHILI , Islam ASHRY , Tien Khee NG , Mohamed-Slim ALOUINI
CPC classification number: G02B6/4203 , H04B10/11
Abstract: A compounded light-focusing optical element is configured to focus light, and the compounded light-focusing optical element includes a body having a first, flat, end face and a second, curved end face, the second, curved end face being opposite to the first, flat end face, and plural optical fibers extending through the body, from the first, flat end face to the second, curved end face. The plural optical fibers are fused to each other to form the body, and end faces of the plural optical fibers, corresponding to the second, curved end face, are pointing in different directions.
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公开(公告)号：US20220140903A1
公开(公告)日：2022-05-05
申请号：US17431465
申请日：2019-05-07
Inventor： Boon Siew OOI , Xiaobin SUN , Chao SHEN , Tien Khee NG
IPC: H04B10/112 , H04B10/118 , H04B13/02
Abstract: A method for transmitting information across a water-air interface with a ultraviolet (UV) beam, the method including emitting the UV beam in a first medium, with a first optical wireless communication device; measuring a scintillation index of the UV beam in a second medium, different from the first medium, at a second optical wireless communication device; selecting, based on a value of the scintillation index, a modulation scheme for the UV beam; and modulating the UV beam with the selected modulation scheme. The UV beam has a wavelength in a range of 100 to 400 nm.
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公开(公告)号：US20220094441A1
公开(公告)日：2022-03-24
申请号：US17422939
申请日：2020-02-19
Inventor： Boon Siew OOI , Chun Hong KANG , Tien Khee NG
IPC: H04B10/61 , G02B6/12 , G02B6/10 , H04B10/116 , F21V8/00
Abstract: A large-area, waveguide-based, high-speed ultraviolet and visible light photodetector system for optical wireless communication includes a substrate; plural, parallel, waveguides formed directly on the substrate and including a high quantum-yield wavelength-converting material of semiconductor nature; an optical coupling system optically connected to each one of the plural, parallel, waveguides; and a photodetector optically connected to the optical coupling system and configured to detect an outgoing light. The wavelength-converting material converts a first wavelength of an incoming light at high-speed, received by the plural, parallel, waveguides, into a second wavelength of the outgoing light. The first wavelength is different from the second wavelength, and the first and second wavelengths are between 200 and 800 nm.
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公开(公告)号：US20210408329A1
公开(公告)日：2021-12-30
申请号：US17471379
申请日：2021-09-10
Inventor： Boon S. OOI , Aditya PRABASWARA , Bilal JANJUA , Tien Khee NG
Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.
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5.发明申请公开(公告)号：US20190214531A1
公开(公告)日：2019-07-11
申请号：US16315081
申请日：2017-07-25
Inventor： Tien Khee NG , Chao ZHAO , Davide PRIANTE , Boon S. OOI , Mohamed Ebaid Abdrabou HUSSEIN
IPC: H01L33/44 , H01L31/0216 , H01L31/18 , C25B1/00 , C25B1/04
CPC classification number: H01L33/44 , C25B1/003 , C25B1/04 , H01L31/0216 , H01L31/02161 , H01L31/02167 , H01L31/02168 , H01L31/03044 , H01L31/03048 , H01L31/1868 , H01L33/20 , H01L33/32 , H01L2933/0025 , Y02P20/134
Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20230188212A1
公开(公告)日：2023-06-15
申请号：US17923960
申请日：2021-05-18
Inventor： Meiwei KONG , Boon S. OOI , Tien Khee NG
IPC: H04B10/116 , H04N7/18 , E21C35/24 , H04B10/67
CPC classification number: H04B10/116 , E21C35/24 , H04B10/672 , H04N7/181
Abstract: An autonomous mining system includes a real-time digital video transmission sub-system configured to obtain video streams from underground, and transfer the video streams to a control center located above ground; and an exploration and maintenance sub-system located underground, and configured to extract a resource and bring the resource to the surface, based exclusively on commands received from the control center through the real-time digital video transmission sub-system.
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公开(公告)号：US20210376184A1
公开(公告)日：2021-12-02
申请号：US17290525
申请日：2019-11-04
Inventor： Boon S. OOI , Aditya PRABASWARA , Jung-Wook MIN , Tien Khee NG
Abstract: A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.
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8.发明申请公开(公告)号：US20200266902A1
公开(公告)日：2020-08-20
申请号：US16863356
申请日：2020-04-30
Inventor： Boon S. OOI , Bilal JANJUA , Chao SHEN , Hassan M. OUBEI , Tien Khee NG
IPC: H04B13/02 , H04B10/80 , H04B10/116 , H01S5/00 , H04B10/564 , H04L27/26
Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.
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公开(公告)号：US20200236876A1
公开(公告)日：2020-07-30
申请号：US16846613
申请日：2020-04-13
Inventor： Boon OOI , Aloysius WONG , Tien Khee NG
Abstract: A system and method are provided for indoor agriculture using at least one growth chamber illuminated by laser light. In an example embodiment of the agriculture system, a growth chamber is provided having one or more walls defining an interior portion of the growth chamber. The agriculture system may include a removable tray disposed within the interior portion of the growth chamber. The agriculture system also includes a light source, which may be disposed outside the growth chamber. The one or more walls may include at least one aperture. The light source is configured to illuminate at least a part of the interior portion of the growth chamber. In embodiments in which the light source is disposed outside the growth chamber, the light source is configured to transmit the laser light to the interior portion of the growth chamber via the at least one aperture.
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10.发明申请公开(公告)号：US20180261455A1
公开(公告)日：2018-09-13
申请号：US15753578
申请日：2016-10-07
Inventor： Boon Siew OOI , Chao ZHAO , Tien Khee NG
IPC: H01L21/02 , C30B29/60 , C30B29/40 , C30B23/02 , H01L31/0352 , H01L33/32 , H01L33/40 , H01L33/22 , H01L29/06
CPC classification number: H01L21/02603 , C30B23/025 , C30B29/403 , C30B29/60 , H01L21/02631 , H01L29/0669 , H01L31/035227 , H01L33/22 , H01L33/32 , H01L33/405
Abstract: Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.
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